共形光学系统消色差设计

设计了一个红外波段消色差共形光学系统.共形整流罩采用流线型几何外表面,能够有效减少空气阻力,提高导弹飞行性能.但是上述表面破坏了球形整流罩的点对称几何特性,使该系统具有大倾斜、大偏心光学特性,引入依赖于目标视场和瞬时视场的动态像差特性.已报道的文献都是针对单色像差校正问题,而对于大目标视场下单色像差与色差校正难点一直没有相关研究报道.基于实际光线追迹结果、通过衍射元件色散特性和构建适当的光学系统结构,克服了导引头内部有限的空间限制,实现了系统消色差设计.最后设计实例结果表明,系统在整个目标视场范围内均得到较好的成像质量.     

菲涅耳-基尔霍夫积分与半波带法分析衍射光谱

惠更斯菲 涅耳原理指出光的衍射本质是无穷多次波的相干叠加.在研究衍射光谱的强度时可使用菲涅耳-基尔霍夫衍射积分进行计算,但该积分的计算较为复杂.为了简化计算而引入菲涅耳半波带的概念,把积分运算简化为振幅矢量的叠加,从而在研究衍射时由菲涅耳-基尔霍夫衍射积分过渡到菲涅耳半波带法.在菲涅耳半波带法中波前上相邻两个半波带到达叠加点的光程差为半个波长,从而导致相位差π.因此相邻两个半波带引起的振动在叠加点发生相消,最终叠加点的光强由发出次波的半波带数目的奇偶性决定.奇数个半波带在叠加点的光强得到加强,偶数个半波带在叠加点的光强发生相消.     

驻波情形的液体声光效应的理论与实验研究

模拟计算了液体声光衍射的贝塞尔函数,测量了不同质量分数NaCl溶液对激光的衍射效率和不同温度纯水对激光衍射的相对光强比,计算了不同质量分数NaCl溶液的声光相位延迟、声致折射率变化量幅值.结果表明:随着NaCl溶液质量分数的增加,声光衍射效率、相对光强比、声致折射率变化量幅值均不同程度下降,而温度对纯水的相对光强比影响很小.     

Airy加速光束的局域空间频率及其在光束设计中的应用

Airy加速光束是近年来备受关注的一种新型无衍射光束. 它所具有的自由加速、无衍射及自恢复特性使其在光学微操纵、非线性光学、 电子加速等诸多领域显示出重要的应用价值. 因此, 如何方便高效地生成加速光束成为近年来的一个热点研究内容. 本文对Airy加速光束复振幅分布的空间振荡特性进行了分析, 建立了利用局域空间频率描述其加速特性的理论. 提出了利用零点坐标计算加速光束局域空间频率的方法, 通过非线性拟合给出了可以精确描述Airy光束局域空间频率的解析公式; 确定了加速光束的局域空间频率函数与加速轨迹之间的定量关系, 给出了由给定加速轨迹计算相应的局域空间频率以及加速光束的纯相位函数的一种简单计算方法. 将上述分析结果用于设计产生具有给定加速轨迹的加速光束所需的相位函数, 成功求出了能够产生圆弧形加速轨迹的新型加速光束的纯相位函数的解析表达式. 基于该相位函数设计的纯相位衍射光学元件的模拟衍射结果证明了上述方法的可行性. 关键词： 衍射光学 加速光束 局域空间频率     

亚波长金属光栅的衍射辐射特性研究

分析了亚波长金属光栅的双边衍射辐射机制和特性.利用运动电子激励亚波长光栅结构,研究了其产生的双边衍射辐射.通过三维粒子模拟软件仿真,得到了光栅上下空间的电场空间分布,结合结构辐射布里渊图,证明了亚波长对称光栅上下半空间的衍射辐射场分布同样可以由Smith-Purcell辐射公式来解释,即主要有电子运动速度和光栅周期决定,并分别研究了缝隙宽度、光栅厚度对上下半空间衍射辐射的影响.为进一步研究下半空间的衍射辐射场,采用了非对称的光栅结构,研究表明非对称光栅下半空间衍射辐射场不仅取决于电子运动速度和结构下表面的周期,同时也与电子运动激励起的上半空间的辐射频率范围密切相关.     

基于自衍射效应的自参考光谱干涉方法的研究

研究一种基于非线性透明光学介质中的自衍射和自参考光谱干涉的新方法来进行飞秒激光脉冲测量. 实验中, 基于此新方法设计一种简单装置, 对800 nm 中心波长, 约40 fs 近无啁啾飞秒激光脉冲进行测量, 并与自参考光谱相干电场重建法测量结果进行比较, 得到了一致的结果. 此新方法与相应的装置结构简单, 可以对深紫外到中红外光谱范围的飞秒脉冲进行测量. 关键词： 飞秒激光脉冲 自参考光谱干涉 自衍射 脉冲测量     

High-contrast imaging for weakly diffracting specimens in coherent diffraction imaging

Coherent diffraction imaging (CDI) and ptychography techniques bypass the difficulty of having high-quality optics in X-ray microscopy by using a numerical reconstruction of the image that is obtained by inverting the diffracted intensity recorded by a charge-coupled device array. However, the reconstruction of the image from the intensity data obtained from a weakly diffracting specimen is known to be difficult because of the obvious reduction in signal-to-noise ratio (SNR). In this case, the specimen only slightly modifies the probe diffraction pattern, resulting in difficulty in the identification of the detailed structure of the specimen from the reconstructed image because of the poor contrast and sharpness of the image. To address this situation, a modification in the image retrieval algorithms used in the iterative reconstruction of the image is suggested. This modification should double the presence of high spatial frequencies in the diffraction pattern to enhance the contrast and edge detection in existing imaging techniques.     

Investigation of Bessel beam propagation in scattering media with scalar diffraction method

Bessel beam propagation in scattering media is simulated using the angular spectrum method combined with slice-by-slice propagation model. Generating Bessel beams with a spatial light modulator, which provides a means to adjust flexibly the parameters of the Bessel beam, allows us to validate the simulation results experimentally. The study reveals that the self-reconstructing length changes oppositely with the axicon angle （i.e., the larger the axieon angle, the shorter the self-reconstructing length）. The radius of the incident beam has little influence on the self-reconstruction of the Bessel beam central lobe.     

Influences of high-temperature annealing on atomic layer deposited Al2 O3/4H-SiC

High-temperature annealing of the atomic layer deposition (ALD) of Al2O3 films on 4H-SiC in O 2 atmosphere is studied with temperature ranging from 800℃ to 1000℃. It is observed that the surface morphology of Al2O3 films annealed at 800℃ and 900℃ is pretty good, while the surface of the sample annealed at 1000℃ becomes bumpy. Grazing incidence X-ray diffraction (GIXRD) measurements demonstrate that the as-grown films are amorphous and begin to crystallize at 900℃. Furthermore, C-V measurements exhibit improved interface characterization after annealing, especially for samples annealed at 900℃ and 1000℃. It is indicated that high-temperature annealing in O2 atmosphere can improve the interface of Al2O3 /SiC and annealing at 900℃ would be an optimum condition for surface morphology, dielectric quality, and interface states.