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盐酸胍在阻挡层化学机械抛光中对速率选择性及表面形貌的影响 总被引:1,自引:1,他引:0
We propose an alkaline barrier slurry containing guanidine hydrochloride(GH) and hydrogen peroxide.The slurry does not contain any corrosion inhibitors, such as benzotriazole(BTA). 3-inch samples of tantalum copper and oxide were polished to observe the removal rate. The effect of GH on removal rate selectivity along withhydrogenperoxidewasinvestigatedbycomparingslurrycontainingGHandH2O2withslurrycontainingonly GH. Details about the tantalum polishing mechanism in an alkaline guanidine-based slurry and the electrochemical reactions are discussed. The results show that guanidine hydrochloride can increase the tantalum polishing rate and the selectivity of copper and barrier materials. The variation of the dishing and wire line resistance with the polishing time was measured. The dishing value after a 300 mm pattern wafer polishing suggests that the slurry has an effective performance in topography modification. The result obtained from the copper wire line resistance test reveals that the wire line in the trench has a low copper loss. 相似文献
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We have proposed a TSV (through-silicon-via) alkaline barrier slurry without any inhibitors for barrier CMP (chemical mechanical planarization) and investigated its CMP performance. The characteristics of removal rate and selectivity of Ti/SiO2/Cu were investigated under the same process conditions. The results obtained from 6.2 mm copper, titanium and silica show that copper has a low removal rate during barrier CMP by using this slurry, and Ti and SiO2 have high removal rate selectivity to Cu. Thus it may be helpful to modify the dishing. The TSV wafer results reveal that the alkaline barrier slurry has an obvious effect on surface topography correction, and can be applied in TSV barrier CME 相似文献
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The copper removal rate and uniformity of two types copper slurries were investigated, which was performed on the 300 mm chemical mechanical planarization (CMP) platform. The experiment results illustrate that the removal rate of the two slurries is nearly the same. Slurry A is mainly composed ofa FA/OI1 type chelating agent and the uniformity reaches to 88.32%. While the uniformity of slurry B is 96.68%, which is mainly composed of a FA/OV type chelating agent. This phenomenon demonstrates that under the same process conditions, the uniformity of different slurries is vastly different. The CMP performance was evaluated in terms of the dishing and erosion values. In this paper, the relationship between the uniformity and the planarization was deeply analyzed, which is mainly based on the endpoint detection mechanism. The experiment results reveal that the slurry with good uniformity has low dishing and erosion. The slurry with bad uniformity, by contract, increases Cu dishing significantly and causes copper loss in the recessed region. Therefore, the following conclusions are drawn: slurry B can improve the wafer leveling efficiently and minimize the resistance and current density along the line, which is helpful to improve the device yield and product reliability. This investigation provides a guide to improve the uniformity and achieve the global and local planarization. It is very significant to meet the requirements for 22 nm technology nodes and control the dishing and erosion efficiently. 相似文献
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微纳米颗粒的去除是半导体、微电子、微型机械、精密光学等高新技术中的关键问题,而常规清洗方法难以有效去 除。近年来国际上发展的DLC、SLC激光去除方法非常有效,本文对DLC、SLC的实验方法、去除机制、影响因素和规律等进 行综述,指出了存在的问题。 相似文献