分层小区技术在GSM网络中的应用

从分层小区技术（HCS）基本概念出发，对HCS技术在容量和覆盖方面的应用进行由浅入深的分析和研究，为移动运营商在GSM网络中引入HCS技术提供有益的参考。     

一种基于高阶统计量的组合盲均衡新算法

基于高阶统计量的逆滤波器准则（IFC）和超指数迭代算法（SEA）已经被广泛地应用于解决盲均衡问题。Chi，Feng和Chen通过对两种算法的性能分析提出在特定的条件下SEA和IFC算法的得到的均衡器是等价的。基于这种等价性，文献中提出通过对这两种算法进行组合来提高算法性能的改进方案。采用这种改进的改进方案，将一种最新的改进的SEA算烈和IFC算法进行组合，提出一种收敛性又好，收敛速度又快的组合算法。     

深亚微米SOC芯片分层设计方法

根据深亚微米SOC设计的特点和需求,提出了一种新的基于模块的全芯片分层设计方法,它把系统架构、逻辑设计以及物理实现有机结合到一起.通过渐进式时序收敛完成芯片的层次规划,并最终达到一次实现芯片级的时序收敛,大大提高了深亚微米SOC设计的效率,并在实际设计之中得到了有效验证.     

抛光型SLAM系统灵敏度研究

以片式电子材料元器件作为无损检测分析对象,以提高激光扫描声学显微镜(SLAM)系统灵敏度为目标,详细分析了入射声波在抛光型分层介质中的传播规律,建立了抛光型样品自由界面动态波纹振幅数学模型。经综合分析获得了提高系统响应的方法,为进一步改进SLAM提供了理论依据。     

基于三种调制模式下的turbo码光无线通信系统分析

从分析大气对光无线通信系统的影响出发,研究了大气信道特性,建立了大气信道信噪比和能见度的关系.为降低系统误码率,提出了基于OOK、BPSK、BPPM三种调制模式的turbo码的编码方案,推导出三种不同方案对应的turbo码迭代MAP算法.应用建立的信噪比关系,分析和计算了基于三种不同方案的系统的误码率.结果表明,基于BPSK的turbo码系统比OOK和BPPM系统的信噪比降低约3dB,且在高的信噪比情况下,BPSK系统能显著降低系统的误码率.因此,基于BPSK的turbo码方案较适合光无线通信系统.     

氟诺喹酮类药物分子抗肺炎克雷伯氏菌的结构活性关系研究

利用主成分分析和分层聚类分析方法研究了具有抗肺炎克雷伯氏菌的氟诺喹酮类药物分子的结构活性关系．主成分分析方法表明变量ELUMO、ΔEHL、μ、Q3、Q5、QA、lgP、MP、MR能够有效地对抗肺炎克雷伯氏菌的氟诺喹酮类药物进行分类．分层聚类方法和主成分分析方法的结果一致．这表明两种方法都能够对新的具有抗肺炎克雷伯氏菌的氟诺喹酮类药物的分类提供一个可信的规律．利用主成分分析法和分层聚类分析法对其他4个氟诺喹酮类药物分子进行分析，结果都表明有三个药物分子具有较强的抗肺炎克雷伯氏菌活性，此结果和临床结果相吻合．     

Growth of Semi-Insulating GaN Using N2 as Nucleation Layer Carrier Gas Combining with an Optimized Annealing Time

Semi-insulating （SI） GaN is grown using N2 as the nucleation layer （NL） carrier gas combined with an optimized annealing time by metalorganic chemical vapour deposition. Influence of using 1-12 and N2 as the NL carrier gas is investigated in our experiment. It is found that the sheet resistance of unintentionally doped GaN can be increased from 10^4 Ω/sq to 10^10 Ω/sq by changing the NL carrier gas from 1-12 to N2 while keeping the other growth parameters to be constant, however crystal quality and roughness of the tilm are degraded unambiguously. This situation can be improved by optimizing the NL annealing time. The high resistance of GaN grown on NL using N2 as the carrier gas is due to higher density of threading dislocations caused by the higher density of nucleation islands and small statistic diameter grain compared to the one using 1-12 as carrier gas. Annealing the NL for an optimized annealing time can decrease the density of threading dislocation and improve the tilm roughness and interface of AlGaN/GaN without degrading the sheet resistance of as-grown GaN signiticantly. High-quality SI GaN is grown after optimizing the annealing time, and AlGaN/GaN high electron mobility transistors are also prepared.     

Growth and Characterization of A1GaN/A1N/GaN HEMT Structures with a Compositionally Step-Graded A1GaN Barrier Layer

A new A1GaN/A1N/GaN high electron mobility transistor （HEMT） structure using a compositionally step-graded A1GaN barrier layer is grown on sapphire by metalorganic chemical vapour deposition （MOCVD）. The structure demonstrates significant enhancement of two-dimensional electron gas （2DEG） mobility and smooth surface morphology compared with the conventional HEMT structure with high A1 composition A1GaN barrier. The high 2DEG mobility of 1806 cm2/Vs at room temperature and low rms surface roughness of 0.220 nm for a scan area of 5μm×5 μm are attributed to the improvement of interracial and crystal quality by employing the stepgraded barrier to accommodate the large lattice mismatch stress. The 2DEG sheet density is independent of the measurement temperature, showing the excellent 2DEG confinement of the step-graded structure. A low average sheet resistance of 314.5Ω/square, with a good resistance uniformity of 0.68%, is also obtained across the 50 mm epilayer wafer. HEMT devices are successfully fabricated using this material structure, which exhibits a maximum extrinsic transconductance of 218 mS/ram and a maximum drain current density of 800 mA/mm.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.