掺杂InGaAs／InAlAs单量子阱中电子对称态和反对称态磁输运研究

利用变温Hall测量研究了重掺杂InGaAs／InAlAs单量子阱中二维电子气，发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置，得到电子对称态和反对称态之间的能级间距为4meV。此外，通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。     

Optical and Acoustical Frequencies in a Nonlinear Helicoidal Model of DNA Molecules

We compare optical and acoustical frequencies in the Peyrard-Bishop-Dauxois model, i.e. an extended Peyrard-Bishop model, of DNA molecules. We discuss how ratio of those frequencies depends on a value of the harmonic constant of the helicoidal spring K. Also, we suggest that the most favourable mode could be a resonance mode.     

纳米PIC-I分子聚集体的超辐射和Z-扫描研究

分子聚集体在非线性光学和集成光学等领域有潜在的应用前景。纳米结构一维染料分子J—聚集体有许多既不同于单个分子又不同于体材料的奇异性质，即超辐射和巨光学非线性。这种超辐射是由于在几个本征态内振于强度结合在一起，得到一巨跃迁偶极于，因而是超辐射的。跃迁速率与耦合分子个数N成正比。分子聚集体的J—吸收和超辐射发射是共振的。利用Z—扫描技术测量PIC在不同配比下的非线性折射率、非线性吸收系数和非线性极化率。观测到随着链长变短，样品的三阶非线性极化率增大。对这种非线性增强的机制进行了分析和讨论。     

Self-assembly behaviour of amphiphilic diblock copolymer in selective solvents studied by synchrotron small-angle x-ray scattering

The aggregation behaviour of styrene-vinyl benzoic acid (PSm-b-PVBAn) amphiphilic diblock copolymers in selective solvents with different m and n was investigated by synchrotron small-angle x-ray scattering (SAXS). We have carried out a detailed analysis of scattering intensity, dimension, shape and microstructure of the diblock copolymers of narrow distribution in water, methanol, ethanol and isopropanol selective solvents, respectively. We have found that the aggregation behaviour of the copolymer depends on the nature of the solvent and the micelle forms fiat disc objects with the ratio of radius ω=0.4. The average radius gyration Rg of the copolymer decreases as solvents change from isopropanol to ethanol and to methanol, and increases with increasing pH in aqueous solution, but decreases with the addition of COCl2 in ethanol solvent. The scattering intensity of diblock copolymer micelle follows I(h) ∝ h^-α in different selective solutions, suggesting that the PSm-b-PVBAn coils have self-similar structure behaviour or a fractal structure in the selective solvents. All of these revealed that the aggregation behaviour of the diblock copolymer changes dramatically with experimental condition in the selective solvent. The increase of mass fractal dimension (Dm) from 2.12 to 2.47 indicates that the copolymer chain changes from a swollen coil to a rather compact disc in the course of changing solvents, decreasing surface fractal dimension (Ds) from 2.98 to 2.58 indicates that the copolymer micelle change from a rather rough surface to a smooth form in the course of increasing pH in aqueous solutions, and increasing Dm and Ds from 2.29 to 2.35 and 2.70 to 2.90, respectively, indicates the shrinkage of copolymer micelle to a rather compact and rough disc form by adding COCl2 in ethanol solvents.     

关于气体中有无速率为无穷大分子的再讨论

本文以较简捷的方法讨论了气体分子速率问题，给出了计算分子最大速率的理论公式，通过这些讨论可更加深入地理解气体中分子的运动情况，准确地理解麦克斯韦速率分布函数。     

141Nd激发态的在束γ谱学研究

通过130Te(16O,5nγ)141Nd反应布居了141Nd的高自旋态能级. 对反应产生的在束γ射线进行了γ射线单谱和γ-γ符合测量. 建立了激发能达7614.5keV的141Nd能级纲图,新发现了12条γ射线和15个能级. 基于实验测量的γ跃迁各向异性,建议了141Nd部分能级的自旋值. 用一个h11/2价中子空穴与142Nd核芯晕态的耦合可以定性地解释141Nd的能级结构.     

F-H实验仪与光栅光谱仪连用观测253.7nm谱线

通过F-H实验仪和光栅光谱仪的连用，可实时观测汞原子从6s6s1So态激发到6s6sSP1态，退激时，辐射出能量为4．9eV的光量子，其波长为253．7nm．     

Silane photoabsorption spectra mear the Si 2p thresholds：the geometry of Si 2p excited SiH4

Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH_{4}^{**} is recommended to be of a C_{2v} symmetry. More specifically, the Si 2p-excited SiH_{4}^{**} have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively.     

分子束外延生长p型ZnTe:Sb-ZnSe应变层超晶格材料

我们以掺Fe的高阻InP作衬底材料,在国产MBE-Ⅲ型设备上,采用调制掺杂技术,成功地生长出了p型ZnTe:Sb-ZnSe应变层超晶格材料。室温霍耳效应测量表明:载流子浓度为10~(14)/cm~3量级,迁移率为250cm~2/V·s。俄歇谱分析清楚表明,仅在ZnTe层中Sb原子存在,且界面比较分明,调制掺杂已获初步成功。