纳米MOSFET迁移率解析模型

从玻尔兹曼方程出发，重新计算了纳米MOSFET沟道内的载流子所服从的分布函数，特别是考虑了纳米MOSFET横向电场和纵向电场之间的相互作用，并且以得到的非平衡状态下的分布函数为基础，考虑载流子寿命和速度的统计分布，给出了纳米MOSFET载流子迁移率的解析表达式.通过与数值模拟结果进行比较和分析，该迁移率解析模型形式简洁、物理概念清晰，且具有相当精度. 关键词： 玻尔兹曼方程 纳米MOSFET 迁移率 沟道有效电场     

粒子-转子模型和推转壳模型中的能谱统计分析

用粒子–转子模型和推转壳模型研究了6个粒子分别填充在单j壳和双j壳上的混沌行为.分析了单j壳和双j壳情况下能谱的最近邻能级间距分布和谱刚度随自旋及推转频率的变化,结果表明,当组态空间大小不变时,系统在双j壳(g_7/2+d_5/2)情况下比在单j壳(i_13/2)情况下更规则,而当组态空间从单j壳(i_13/2)扩大到双j壳(i_13/2+g_9/2)时,系统的混沌程度变化不大.同时比较了将6个粒子的两体相互作用分别取为δ力和对力时的系统的混沌行为     

A Facile Synthesis of α-Phenylthio-α,β-Unsatuated Esters

α-phenylthio-α，β-unsaturated esters 6 were synthesized by Witting reaction of 3.which were prepared by a phenylsulfenyllation-trans-ylidation reaction.     

The production of slow particles in 16O－Em interactions at 4.5 A GeV/c

A sample of 1233 events is used to study the general characteristics of {}^{16}O－Em interactions at 4.5 A GeV/c. Multiplicity and angular distributions of slow particles and correlations among them are discussed. The present data are compared with the corresponding results from the interactions of other projectiles at the same energy and also the same projectile at different energies. The results indicate that black particle production is independent of the energy and mass of the projectile, but for grey particles it is dependent on the mass of projectile.     

Isoscaling of the Fission Fragments with Langevin Equation

The Langevin equation is used to simulate the fission process of ^112Sn ^112Sn and ^116Sn ^116Sn. The mass distribution of the fission fragments are given by assuming the process of symmetric fission or asymmetric fission with the Gaussian probability sampling. The isoscaling behaviour has been observed from the analysis of fission fragments of both the reactions, and the isoscaling parameter α seems to be sensitive to the width of fission probability and the beam energy.     

Singlet-Triplet Transition in Quantum Dots Confined by Triangular and Bowl-Like Potentials： the Effect of Electric Fields

We theoretically investigate the energy spectra of two-electron two-dimensional （2e 2D） quantum dots （QDs） confined by triangular potentials and bowl-like potentials in a magnetic field by exact diagonalization in the framework of effective mass theory. An in-plane electric field is found to contribute to the singlet-triplet transition of the ground state of the 2e 2D QDs confined by triangular or bowl-like potentials in a perpendicular magnetic field. The stronger the in-plane electric field, the smaller the magnetic field for the total spin of the ground states in the dot systems to change from S = 0 to S = 1. However, the influence of an in-plane electric field on the singlettriplet transition of the ground state of two electrons in a triangular QD modulated by a perpendicular magnetic field is quite small because the triangular potential just deviates from the harmonic potential well slightly. We find that the strength of the perpendicular magnetic field needed for the spin singlet-triplet transition of the ground state of the QD confined by a bowl-like potential is reduced drastically by applying an in-plane electric field.     

光学材料微缺陷引起的损伤机理及后处理

采用时域有限差分方法（FDTD）进行元件表面微结构电磁场分布的数值模拟；同时实验分析了化学湿法刻蚀对光学元件表面面形及粗糙度、激光损伤阈值等的影响。     

软件无线电中采样率转换技术的实现及在3G中的应用

目前移动通信标准繁多,且新旧体制混杂,很难做到统一.为了实现互连互通,目前比较可行的方法是采用软件无线电.采样率转换技术是实现互连互通的关键.文中针对第三代移动通信系统(3G)中不同通信体制的带宽、速率要求,根据分级变换的思想,对3G中的CDMA2000和TDSCDMA的采样率转换方案进行了设计,并对3G中的5种制式的采样率转换方案进行了分析比较.实验表明,这一方案可以在采样率变换的高效网络结构基础上进一步降低滤波运算量和存储量.     

基于EAI的多层分布式应用与实现

针对目前大型企业各类应用迅速增加但应用之间缺乏有效通信的问题,采用企业应 用集成(EAI)技术,提出了4层分布式应用体系结构,实现流程自动化和松耦合的应用集成.文中首先从EAI技术和常见解决方案出发,详细阐述了表示层、企业门户、EAI总线层和数据源层的功能及软件结构,并结合电信业务运营支撑系统的实际需求,给出了J2EE平台下的应用实例开发.利用组件和容器的技术构建企业门户,通过工作流和企业Java组件(EJB)技术实现EAI总线,借助资源适配器完成应用之间的互连互通.该系统现已投入实际运行,取得了良好的应用效果.     

Structural Characteristics of Liquid Sn

We investigate the structural properties of liquid Sn. With the help of the internal friction (tanФ) method, it is found that a peak appears in the tan Ф - T curve, suggesting that an anomalous discontinuous temperatureinduced structure change may take place in liquid Sn. From the experimental data of pair distribution functions, we calculate the viscosity η and the excess entropy S and it is found that there are a peak of viscosity in the η-T curve and a bend of excess entropy in the S - T curve, which give a positive support to the appearance of the internal-friction peak in the tan Ф- T curve.