工业用高功率光纤激光器

IPG光子日本株式会社现已开始出售IPG集团的各种型号工业用高功率光纤激光器。     

光学材料

聚合物光波导=ボリマ光导波路[日]／今村三郎／/し-ザ-研究．-2004，32(9)．-581～590     

替代柱面透镜的二元光学元件设计

在二极管泵浦固体激光器耦合光学系统中，柱面透镜起着非常重要的作用。随着系统轻量化、小型化的要求需要用重量轻、尺寸小的光学器件来替代。本文介绍一种用于替代柱面透镜的二元光学元件的设计和制作方法。     

γ-辐照对纯Y_2SiO_5和Eu~(3+)∶Y_2SiO_5晶体光谱性能的影响

研究了γ-辐照前后纯Y2SiO5和Eu3+掺杂的Y2SiO5晶体吸收光谱的变化,辐照后,未退火和氢气退火的纯Y2SiO5晶体在260~270 nm和320 nm波段产生了附加吸收峰,分别是由F心和O-心的吸收引起的;经过空气退火的纯YSO晶体中,由于消除了氧空位,因此辐照后没有出现色心吸收峰。在Eu3+∶Y2SiO5晶体中,不但有相同的F心和O-心吸收峰,而且还有Eu2+离子在300 nm和390 nm的吸收峰。随着辐照剂量的增加,色心附加吸收峰增强。空气退火能减少Eu3+∶Y2SiO5晶体中的色心,而氢气退火能增加色心。     

激光晶体YAG中Er3+的辐射跃迁

本文讨论和分析了激光晶体YAG中Er3+离子的激光上能级的4S3/2、4I11/2和4I13/2辐射跃迁的有关因素。     

Fabrication of Compound Lattice by Holographic Lithography

Some compound lattices in photonic crystals with large complete photonic band gaps, such as the diamond structure and the two-dimensional hexagonal compound structure, is desired for fabrication. A novel method for fabrication of compound lattices by holographic lithography is reported. The key point is phase modulation by photoelectrical control and multiple-exposure techniques. This technique introduces many advances: for instance,using the same coherent beams and without changing the position of the sample during multiple-exposure.     

电致发光色纯性增强的硅基有机微腔

报道了硅基有机微腔的电致发光（EL）.该微腔由上半透明金属膜、中心有源多层膜和多孔硅分布Bragg反射镜（PS DBR）组成.半透明金属膜由Ag（２０nm）构成，充当发光器件的负电极和微腔的上反射镜.有源多层膜由Al (1 nm) / LiF(05 nm) /Alq3/Alq3:DCJTB/NPB/CuPc/ITO/SiO2组成，其中的Al/LiF为电子注入层，ITO为正电极，SiO2为使正、负电极电隔离的介质层.该PS DBR是采用设备简单、成本低廉且非常省时的电化学腐蚀法用单晶Si来制备的；该PS 关键词： 电化学腐蚀 电致发光 窄峰发射 硅基有机微腔     

Pyroelectricity and Spontaneous Polarization in [111] Oriented 0.955 Pb（Zn1/3Nb2/3）O3-0.045PbTiO3 Single Crystals

We report that the measurements of the pyroelectric current of the pre-poled [111]-oriented 0.955 Pb（Zn1/3Nb2/3） O3-0.045 PbTiO3 （PZN-4.5%PT） single crystals can shed some light on the phase transition and spontaneous polarization characters of this material in a similar way to measures of remanent polarization and dielectric properties. The pyroelectric current is measured and the corresponding spontaneous polarization is calculated as a function of temperature with various poling fields added during cooling the sample from 200℃ to room temperature. Critical electric field of 0.061 k V/cm is found to be essential to induce the intermediate ferroelectric orthorhombic phase between the ferroelectric rhombohedral and tetragonal phases. Below the critical field, the polarization increases almost linearly with the increase of poling field. At the critical field, the polarization at 30OC increases abruptly from 14μC/cm^2 for a poling field of O.06kV/cm to 29.5μC/cm^2 for a poling field of 0.061 kV/cm, and afterwards, increases slowly and saturates to 31 μC/cm^2 for poling fields beyond 0.55 kV/cm.     

从电子上看康普顿效应

在康普顿效应中，散射光子与入射光子的频率不同，但在电子静止的参考系，可以证明光子的频率在碰撞前后相同。     

螺旋线径向挤压变形对其慢波结构冷测特性的影响

 介绍了用MAFIA软件的准周期边界条件计算螺旋线行波管慢波结构的色散和耦合阻抗，以及用ANSYS软件对螺旋线径向挤压变形建模的方法，并对螺旋线受挤压径向变形对其冷测特性的影响进行了详细的分析。结果表明:螺旋线径向挤压变形会导致相速增大，而在通常的变形范围内耦合阻抗也会增加；当变形继续增大时耦合阻抗上升到最大值后开始下降。