NMOS器件两次沟道注入杂质分布和阈电压计算

分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。对两次注入杂质的扩散分别提取了扩散系数的氧化增强系数、氧化衰减系数和有效杂地系数，给出了表面浓度与工艺参数之间的模拟关系式，以峰值浓度为强反型条件计算了开启电压，文章还给出了开启电压、氧化条件、不同注入组合之间的关系式。     

液体变焦透镜简介

 关于电化毛细管作用的研究始于1875年,李普曼(G.Lippmann)在当时用相关理论来解释对浸在电解液中的水银滴表面施加电压时其形状发生变化这种现象。弗洛姆金(A.Froumkine)用同样的原理解释了电解液体表面的净电荷会改变其与金属表面张角的现象,也就是所谓的电湿润过程。最近,一个巧妙的实验更加形象地展示了这种过程,从而将其应用进行了推广,并使用水银液滴对传感器和光学开关进行了测试。     

长距离管线监测系统的一种智能化过流防护方法

介绍了长距离管线监测系统的一种智能化过流防护方法，详细说明其电路设计原理及相关元件的选择，并与串联自复过流保护元件方式相比较，分析其整体性能，说明其具有响应速度快，安全可靠等特点。     

ZnS∶Zn,Pb蓝粉在低压阴极射线激发下的应用

通过对ZnS∶Zn,Pb蓝色荧光粉进行表面包覆SiO2以改善其稳定性;In2O3材料的适量混合,提高了荧光粉的导电性,降低了它的起辉电压。采用沉淀法制备荧光屏,考察了阳极电压和阳极电流对亮度以及衰减过程的影响,实验结果表明ZnS∶Zn,Pb的性能优于ZnS∶Ag,Cl和ZnS∶Zn,可适用于FED等低压显示器。     

Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films

ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.     

开关和多路复用器

小封装低电压开关和多路复用器推动便携式电子产品的广泛应用.随着移动电话、MP3播放器和掌上电脑（PDA）等便携式电子产品不断地要求增加功能和性能并且不断地缩小封装尺寸，要求每一种集成电路（IC）的设计都需要相应地缩小封装尺寸，同时提高其性能水平。     

固态继电器为电动汽车电池监测提供便利

电动汽车常被喻作“归来的孩子”，因为这项技术在多年前进入市场后便一直沉寂，直至最近才再次活跃起来。其实，电动汽车早于1835年首次于美国出现，到1899年，纽约市接近90％的出租车都是由电力驱动。然而，当电力启动器和内燃机变得完善时，电动汽车的使用就迅速衰退。随着如今对环境保护的关注，由燃烧碳氢化合物造成的污染，加之汽油成本高升的影响，再次     

带诊断监视器的高速VCSEL驱动器MAX3740A

本文介绍了MAX3740A的主要性能、引脚功能、内部结构及工作原理，并结合典型应用电路，介绍了其应用设计过程。     

Von Neumann Entropy of an Electron in One-Dimensional Determined Potentials

By using the measure of von Neumann entropy, we numerically investigate quantum entanglement of an electron moving in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. The delocalized and localized eigenstates can be distinguished by von Neumann entropy of the individual eigenstates.There are drastic decreases in von Neumann entropy of the individual eigenstates at mobility edges. In the curve of the spectrum averaged von Neumann entropy as a function of potential parameter λ, a sharp transition exists at the metal-insulator transition point λc = 2. It is found that the von Neumann entropy is a good quantity to reflect localization and metal-insulator transition.     

A Compact Magnetically Insulated Line Oscillator with New-Type Beam Dump

We present a compact improved model of the magnetically insulated line oscillator with new-type beam dump and other novel features. In the experiments, high-power microwave of the TM01 mode is generated from the device with a frequency range of 1.73-1.78 GHz and a peak power level of above 2 GW, when the diode voltage is taken in the range 520-540kV, and the diode current is in the range 58-62kA. This confirms the simulation results.