光子晶体的原理与应用

光子晶体是一种在微米、亚微米等光波长量级上折射率呈现周期性变化的介质材料，它使某些频率范围内的光子态密度大大降低．甚至完全形成光子禁带．本文介绍了光子晶体的原理、制备及应用．     

纳米尺寸的ZnO晶体高压相变的拉曼散射研究(英文)

Weperformedthehigh-pressureRaman measurementofthethreenanosizedZnOcrystals. Wefoundthesmallerthesize,thehigherthe pressuretoinducethephasetransitionfrom w櫣rzitetorock-saltstructure. High-pressureRamanmeasurementsof nona-shapedZnOcrystalswerepreformed.The…     

Mid—Infrared Optical Parametric Oscillator Based on All—Solid—State—Pumped Periodically Poled LiNbO

We report the tunable mid-infrared generation with a periodically poled LinbO3(PPLN).Using an all-solid-state pumped Nd:YVO4 laser as the pump source and a PPLN nonlinear crystal with grating periods of 28.2-30.8μm,we have achieved wavelength conversion in the 2.90-4.05μm spectral range by period tuning.The use of confocal cavity design has brought a compact,all-solid-state configuration with an average output powers of idler up to -200mW.The maximum power of 277mW was obtained at the wavelength of 3.35um.     

纳米技术新秀:单原子晶体管

 美国康奈尔大学的一个科学家小组研制成由一个钴原子构成的晶体管,钴原子包裹有一层复杂有机化合物,直径仅为10纳米的黄金导线被放置在硅片上,并用这种有机化合物覆盖住。然后在导线上钻一个直径约为1纳米的小孔,制成电源电极和电流电极,再将带有钴原子的有机化合物放置在小孔上,用二氧化硅作绝缘体。哈佛大学另一组科学家也用类似方法研制成单原子晶体管,他们是在黄金电极上放置钒分子,而用氧化铝作绝缘体。单原子或单分子晶体管研究表明,只有在加上一定电压时电流才会通过这类晶体管。此外,将它们放置在磁场中时,通过电流中的电子数量会增加。     

r探测器的中子灵敏度标定技术

CeF3，YaP：Ce等无机晶体分别配光电倍增管构成的探测器，对r线有较高的探测效率，被称为r测器。由于其中子灵敏度比相同能量的r敏度要低数倍，有的甚至低一个量级，因此中子辐射源与周围环境物质作用产生的散射中子和r线将严重影响其输出电流，导致中子灵敏度的标定难以实现。     

Time-Resolved Femtosecond Degenerate Four-Wave Mixing in LiNbO3：Fe,Mg Crystal

Forward degenerate four-wave mixing （DFWM） processes are investigated with a femtosecond pulsed laser in lithium niobate crystal doubly-doped with magnesium and iron （LiNbO3：Fe, Mg）. The pulse energy dependence reveals a pure third-order nonlinear response, and the third-order nonlinear susceptibility x^（3） in the material is evaluated to be 4.96 × 10^-13 esu. The time-resolved DFWM process shows a response time of x^（3） shorter than 100fs, which is due to the nonresonant electronic nonlinearities. Our results indicate that LiNbO3 crystals have potentials for ultrafast real-time optical processing systems, which require a large and fast x^（3） optical nonlinearity.     

模拟相乘器MC1496在高频电子线路实验系统中的应用

分析了模拟相乘器MC1496的乘法特性，介绍了该乘法器在高频电子实验系统中的应用电路设计方法。详细地介绍了MC1496的实用电路．并对每一方面应用都给出了实际测量数据或波形。并重点给出了合理设置测试端口，在不同输入条件下方便地观察模拟相乘器MC1496的信号输出情况，从而使实验人员能通过该实验项目观察到实际波形，以便掌握该模拟相乘器的具体应用，包括双边带、普通调幅、混频、倍频等。     

Experimental and Theoretical Evidence for the Existence of Broad Forbidden Gaps in the Three—Component Composite

The influence of localized resonance on the properties of band-gaps of the two-dimensional periodic composite are analysed numerically and experimentally by comparing the two-component phononic crystal with the three-component one. The three-component composite which exhibits localized resonance in the elastically soft coating ring is composed of a square array of coated cylinders embedded in an epoxy resin. The coated cylinders consist of a steel inner core and a rubber coating, which has much smaller wave velocity and mass density than the matrixand tile inner material. Tile measured transmission power of tile three-component composite drops to the noise level in a broad ultrasonic frequency interval in contrast to the binary composite, which is in good agreement with the calculation using the finite element method.     

Modified Photoluminescence by Silicon-Based One-Dimensional Photonic Crystal Microcavities

photoluminescence (PL) lrom one-dimensional photonic band structures is investigated. The doped photonic crystal with microcavitles are fabricated by using alternating hydrogenated amorphous silicon nitride (a-SiNx:H/a-SiNy:H) layers in a plasma enhanced chemical vapour deposition (PECVD) chamber. It is observed that microcavities strongly modify the PL spectra from active hydrogenated amorphous silicon nitride (a-SiNx:H) thin film. By comparison, the wide emission band width 208nm is strongly narrowed to 11 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of a-SiNx:H. A linewidth of Δλ=11 nm and a quality factor of Q=69 are achieved in our one-dimensional a-SiNz photonic crystal microcavities. Measurements of transmittance spectra of the as-grown samples show that the transmittance resonant peak of a cavity mode at 710nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflector (DBR), which further verifies the microcavity effects.     

激光二极管倍频简单而有效

直接倍频电抽运的激光二极管可能产生小型高效的可见光、窄线宽、相干光源。但是，激光二极管的一个优点是它的廉价，用复杂方法倍频(因昂贵)而降低了其优点。日本信息和通信国家研究所的研究人员，改进了倍频过程，既简单又廉价，而且效果好。