Topological properties of solution sets for stochastic evolution inclusions

In this paper, we investigate the topological structure of solution sets for stochastic evolution inclusions in Hilbert spaces when the semigroup is compact as well as noncompact. It is shown that the solution set is nonempty, compact, and an R_δ-set, which means that the solution set may not be a singleton but, from the point of view of algebraic topology, it is equivalent to a point, in the sense that it has the same homology group as one-point space. As applications of the obtained results, an example is given.     

极大多线性Bochner-Riesz算子Herz型估计

设BδA,*是由Bochner-Riesz算子生成的极大多线性Bochner-Riesz算子,其中DγA∈Λ.β(|γ|=m).获得这个算子及其变形在中心Campanato空间的连续性.     

Oxygen nonstoichiometry (δ) of TiO2−δ-revisited

Oxygen nonstoichiometry (δ) of “undoped” polycrystalline TiO_2−δ has been measured as a function of oxygen partial pressure in the widest ever examined range of 10^-18?P_O2/atm?10^-1 at elevated temperatures (1073?T/K?1473) by thermogravimetry and coulometric titrometry combined and compared with all the reported values. Isothermal variation of nonstoichiometry against P_O2 is explained with a defect model involving quadruply ionized titanium interstitials, electrons, holes, and unidentified acceptors which may be background impurity acceptors or cation vacancies. The equilibrium constants for intrinsic electronic excitation reaction and redox reaction are determined from the nonstoichiometry measured and compared exhaustively with all the reported values. The relative partial molar enthalpy and entropy of oxygen are evaluated as functions of nonstoichiometry and the inner workings of their variations discussed.     

Notch-δ-doped InP Gunn diodes for low-THz band applications

The viability of the indium phosphide (InP) Gunn diode as a source for low-THz band applications is analyzed based on a notch-δ-doped structure using the Monte Carlo modeling. The presence of the δ-doped layer could enhance the current harmonic amplitude (A₀) and the fundamental operating frequency (f₀) of the InP Gunn diode beyond 300 ​GHz as compared with the conventional notch-doped structure for a 600-nm length device. With its superior electron transport properties, the notch-δ-doped InP Gunn diodes outperform the corresponding gallium arsenide (GaAs) diodes with up to 1.35 times higher in f₀ and 2.4 times larger in A₀ under DC biases. An optimized InP notch-δ-doped structure is estimated to be capable of generating 0.32-W radio-frequency (RF) power at 361 ​GHz. The Monte Carlo simulations predict a reduction of 44% in RF power, when the device temperature is increased from 300 ​K to 500 ​K; however, its operating frequency lies at 280 ​GHz which is within the low-THz band. This shows that the notch-δ-doped InP Gunn diode is a highly promising signal source for low-THz sensors, which are in a high demand in the autonomous vehicle industry.     

微分形式的双权积分不等式

该文证明了满足A -调和方程的微分形式的局部双权积分不等式. 作为局部结果的应用,还证明了满足A -调和方程的微分形式的整体双权积分不等式.     

Selective incorporation of Si along step edges during delta-doping on MOVPE-grown GaAs (001) vicinal surfaces

We investigated the delta-doping (δ-doping) of Si using SiH₄ on MOVPE-grown GaAs (001) vicinal surfaces to explore the possibility of selective incorporation of Si along atomic steps, and to demonstrate doping quantum wires by the combination of multiatomic steps and wire-like doping. It was found that the doping density on vicinal surfaces was enhanced as the misorientation angle was increased, which suggested the enhanced decomposition of SiH₄ and the selective incorporation of Si at step edges. It was also found that this selective incorporation could be enhanced by annealing the surface prior to the δ-doping, which resulted from the reduced incorporation of Si at the terrace regions. Anisotropic electron transport properties which are expected from the wire-like incorporation along step edges are also discussed.     

Li+掺杂浓度对Y2O3：Eu3+发光影响的理论

在团簇近似的基础上,利用分子动力学和密度泛函计算相结合的手段,在Y₂O₃:Eu³⁺中研究了随Li⁺掺杂浓度的变化,缺陷形成情况以及C₂位处Y-O键长的变化对电子态密度的影响.结果表明,随着Li⁺掺杂浓度的增加,与C₂格位相关团簇的Y-O键平均键长出现了增加-减小-增加的变化趋势,这可能是引起此类材料发光强度随Li⁺浓度出现类似变化的原因.     

How to improve the diagnosis of kinetic energy in δf PIC codes

This paper propose to analyse the effect of the shape factor that is used in plasma PIC δf$\delta f$ codes to make interpolations between the grid and the particles positions. In δf$\delta f$ codes, the total density fluctuates, even when it should be conserved. We show that, in some cases, the computed non-physical part of the particle kinetic energy fluctuations is dependent on those of the total density. We deduce a method that can reduce drastically the statistical fluctuations in the diagnostics of the kinetic energy.     

Model and analysis of a delta-doping field-effect transistors utilizing an InGaP/GaAs camel-gate structure

In this paper, the performances of a new δ-doping field-effect transistor utilizing an InGaP/GaAs camel-gate structure by theoretical and experimental analysis will be reported. An analytical model related to drain saturation current, transconductance, potential barrier height, gate-to-source depletion capacitance, and unit current gain frequency is developed to explain the device performances. The employments of n⁺-GaAs/p⁺-InGaP/n-GaAs heterostructure gate and the δ-doping channel with heavy-doping level were used to improve transconductance linearity and enhance current drivability. For a 1×100 μm² device, the experimental results show that a drain saturation current of 1120 mA/mm, a maximum transconductance of 240 mS/mm, and a large V_gs swing larger than 3.5 V with the transconductance higher than 200 mS/mm are obtained. In addition, the measured unit current gain frequency f_t is 22 GHz. These experimental results are consistent with theoretical analysis.     

带间共振隧穿二极管(RITD)

带间共振隧穿二极管(RITD)是导带与价带间发生共振隧穿的两端器件,其特点是启始电压VT和峰值电压Vp较低,电流峰谷比PVCR较大。在导出RITD物理模型和其电流密度方程的基础上重点介绍了InAs/AlSb/GaSbⅡ类异质结RITD、n+InAlAs/InGaAs/InAlAs/In-GaAs/p+InAlAsp-n结双势阱Ⅰ类RITD以及δ掺杂RITD三种RITD的器件结构、材料结构、工作原理、器件特性和参数等,并对这三种RITD的特点进行了比较和讨论。