突出矿井瓦斯抽放限制影响因素的AHP-熵权法评价模型

为提高煤与瓦斯突出矿井瓦斯抽放效果,建立了3个一级指标、14个二级指标的突出矿井瓦斯抽放限制影响因素评价指标体系,利用AHP和熵权法分别确定指标因子主、客观权重.通过实地调研分析和反馈验证了AHP-熵权法的可行性和正确性,利用加权平均法确定评价模型的综合权重.研究表明:封孔方式、钻孔半径、抽放时间、煤体裂隙发育程度和抽放负压是目前影响煤矿瓦斯抽放效果的主控因素.     

Subset representations and eigenvalues of the universal intertwining matrix

We solve a combinatorial question concerning eigenvalues of the universal intertwining endomorphism of a subset representation.     

Improved error performance for generalised spatial modulation with enhanced spectral efficiency

The existing analytical average bit error rate (ABER) expression of conventional generalised spatial modulation (CGSM) does not agree well with the Monte Carlo simulation results in the low signal‐to‐noise ratio (SNR) region. Hence, the first contribution of this paper is to derive a new and easy way to evaluate analytical ABER expression that improves the validation of the simulation results at low SNRs. Secondly, a novel system termed CGSM with enhanced spectral efficiency (CGSM‐ESE) is presented. This system is realised by applying a rotation angle to one of the two active transmit antennas. As a result, the overall spectral efficiency is increased by 1 bit/s/Hz when compared with the equivalent CGSM system. In order to validate the simulation results of CGSM‐ESE, the third contribution is to derive an analytical ABER expression. Finally, to improve the ABER performance of CGSM‐ESE, three link adaptation algorithms are developed. By assuming full knowledge of the channel at the receiver, the proposed algorithms select a subset of channel gain vector (CGV) pairs based on the Euclidean distance between all CGV pairs, CGV splitting, CGV amplitudes, or a combination of these.     

Modeling the effect of deep traps on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates

Numerical simulation, using SILVACO-TCAD, is carried out to explain experimentally observed effects of different types of deep levels on the capacitance–voltage characteristics of p-type Si-doped GaAs Schottky diodes grown on high index GaAs substrates. Two diodes were grown on (311)A and (211)A oriented GaAs substrates using Molecular Beam Epitaxy (MBE). Although, deep levels were observed in both structures, the measured capacitance–voltage characteristics show a negative differential capacitance (NDC) for the (311)A diodes, while the (211)A devices display a usual behaviour. The NDC is related to the nature and spatial distribution of the deep levels, which are characterized by the Deep Level Transient Spectroscopy (DLTS) technique. In the (311)A structure only majority deep levels (hole traps) were observed while both majority and minority deep levels were present in the (211)A diodes. The simulation, which calculates the capacitance–voltage characteristics in the absence and presence of different types of deep levels, agrees well with the experimentally observed behaviour.     

Electrochemical growth and characterization of iron doped cadmium sulfide thin films

Cadmium Sulfide and Ferrous doped Cadmium Sulfide thin films have been prepared on different substrates using an electrodeposition technique. Linear sweep voltammetric analysis has been carried out to determine deposition potential of the prepared films. X-ray diffraction analysis showed that the prepared films possess polycrystalline nature with hexagonal structure. Surface morphology and film composition have been analyzed using Scanning electron microscopy and Energy dispersive analysis by X-rays. Optical absorption analysis showed that the prepared films are found to exhibit Band gap value in the range between 2.3, 2.8 eV for Cadmium Sulfide and Ferrous doped Cadmium Sulfide.     

An ideal host-guest system to accomplish high-performance greenish yellow and hybrid white organic light-emitting diodes

Greenish yellow organic light-emitting diodes (GYOLEDs) have steadily attracted researcher's attention since they are important to our life. However, their performance significantly lags behind compared with the three primary colors based OLEDs. Herein, for the first time, an ideal host-guest system has been demonstrated to accomplish high-performance phosphorescent GYOLEDs, where the guest concentration is as low as 2%. The GYOLED exhibits a forward-viewing power efficiency of 57.0 lm/W at 1000 cd/m², which is the highest among GYOLEDs. Besides, extremely low efficiency roll-off and voltages are achieved. The origin of the high performance is unveiled and it is found that the combined mechanisms of host-guest energy transfer and direct exciton formation on the guest are effective to furnish the greenish yellow emission. Then, by dint of this ideal host-guest system, a simplified but high-performance hybrid white OLED (WOLED) has been developed. The WOLED can exhibit an ultrahigh color rendering index (CRI) of 92, a maximum total efficiency of 27.5 lm/W and a low turn-on voltage of 2.5 V (1 cd/m²), unlocking a novel avenue to simultaneously achieve simplified structure, ultrahigh CRI (>90), high efficiency and low voltage.     

Arbitrage‐free call option surface construction using regression splines

In this work, we suggest a novel quadratic programming‐based algorithm to generate an arbitrage‐free call option surface. The empirical performance of the proposed method is evaluated using S&P 500 Index call options. Our results indicate that the proposed method provides a more precise fit to observed option prices than other alternative methodologies. Copyright © 2014 John Wiley & Sons, Ltd.