基于谐振原理的硅微机械加速度计

基于力学振动原理 ,导出敏感梁类谐振振动的微分方程 ,给出了振梁型加速度计的设计原理。指出了加速度计谐振梁频率的相对变化量与梁的厚度无关 ;为避免输出非线性频率信号 ,频率的相对变化率和激励振动的振幅都不宜太大     

On Super Hamiltonian Semigroups

The concept of super hamiltonian semigroup is introduced. As a result, the structure theorems obtained by A. Cherubini and A. Varisco on quasi commutative semi-groups and quasi hamiltonian semigroups respectively are extended to super hamiltonian semigroups.     

Photodiffraction in InGaAs/InGaAsP multiple quantum wells enclosed in a microcavity

We report new results on the diffraction properties of photoinduced gratings in InGaAs/InGaAsP MQW structures. The original feature of this device is that the QWs are enclosed in an asymmetric Fabry–Perot microcavity in order to increase the diffraction efficiency. We observe oscillations in the diffraction efficiency due to resonant effects in the microcavity. The experimental spectra are compared with theory. Diffraction efficiency at 1.55 μm attains a maximum value of 2.7% at a write beam fluence of 260 μ J cm⁻², and then decreases at higher fluences. We explain this phenomenon by an absorption saturation at high excitation.     

Electrochemically induced asymmetrical etching in InAlAs/InGaAs heterostructures for MODFET gate-groove fabrication

We have achieved a self-controlled asymmetrical etching in metalorganic chemical vapor deposition-grown InAlAs/InGaAs heterostructures, which can be suitable for fabricating modulation-doped field-effect transistors (MODFETs) with gate-groove profiles for improved performance. The technology is based on electrochemical etching phenomena, which can be effectively controlled by using different surface metals for ohmic electrodes. When surface metals of Pt and Ni are deposited on the source and the drain, respectively, the higher electrode potential of Pt results in slower etching on the source side than on the drain side. Thus, asymmetry of gate grooves can be formed by wet-chemical etching with citric-acid-based etchant. This represents a new possibility to conduct “recess engineering” for InAlAs/InGaAs MODFETs.     

电磁波在包含各向异性媒质多层介质中传播的分析

对电磁波在包含各向异性媒质多层介质中的传播进行分析，给出了闭合形式的解，该结构可用作法拉第旋转器，与其它准光元件组合构成的准光环行器或隔离器。也可用作辐射口径，通过改变磁化场方向和强度实现波束扫描或极化变化，给出了法拉第旋转角计算结果和实验结果。     

1.5μm波段基于级联二阶非线性的铌酸锂光波导全光波长变换的理论分析

研究了基于级联二阶非线性的铌酸锂波导全光波长变换器的特性.首先从耦合模方程出发,比较了数值分析结果与小信号近似分析的结果.其次在数值分析基础上,分析了铌酸锂晶体的温度变化导致相应基频光波波长与极化反转光栅周期的变化关系.最后分析了在不同相互作用长度下,转换的光波功率与有效基频光波波长带宽、温度调谐带宽、极化反转光栅周期带宽等关系,以对全光波长变换器件进行优化设计 关键词： 级联二阶非线性 波长变换 准位相匹配 铌酸锂光波导     

拟因子试验设计在生产中的应用

根据生产实际,综合利用并列、赋闲列和拟水平试验设计,运用多重比较进行方差分析,寻找水泥熟料的最佳工艺.不仅解决了不同水平多因素试验问题,同时还可考虑交互作用,大大减少了试验次数,从而提高经济效益.     

Concerning seven and eight mutually orthogonal Latin squares

In this paper, three new direct Mutually Orthogonal Latin Squares (MOLS) constructions are presented for 7 MOLS(24), 7 MOLS(75) and 8 MOLS(36); then using recursive methods, several new constructions for 7 and 8 MOLS are obtained. These reduce the largest value for which 7 MOLS are unknown from 780 to 570, and the largest odd value for which 8 MOLS are unknown from 1935 to 419. © 2003 Wiley Periodicals, Inc.     

掺杂InGaAs／InAlAs单量子阱中电子对称态和反对称态磁输运研究

利用变温Hall测量研究了重掺杂InGaAs／InAlAs单量子阱中二维电子气，发现在量子阱中由于存在电子对称态和反对称态导致纵向电阻出现拍频现象。通过分析拍频节点位置，得到电子对称态和反对称态之间的能级间距为4meV。此外，通过迁移率谱方法和多载流子拟合过程研究了不同迁移率电子的浓度和迁移率随温度的变化关系。     

异方差回归中的广义方差比检验

在同方差假设之下,线性模型在回归分析的理论与应用方面起着突出的作用,很受许多研究工作者的青睐.然而,回归模型中同方差性这一标准假设不一定总是成立的.因此我们考虑了用一类基于似残差的方法来检验异方差情形下线性模型拟合观测数据的情况.本文既给出了大量的模拟,又给出了实际数据作为应用的例子.效果都很好.