NMR investigation of concentrated alumina and silica slurries

The longitudinal relaxation times (T₁) of water in concentrated silica and alumina slurries were measured as a function of solids content. It was shown that the results could be fit very well with a two-phase fast-exchange model between free and surface-bound water. As expected, values of T₁ for bound water were in the order of 20–2000 times lower than that for free water, indicating a higher effective viscosity of the surface-bound water. The strength of the interaction depended on the particular surface, and all of the aluminas examined interacted more strongly with water than the two silicas studied, which themselves differed considerably. The chemical mechanical polishing (CMP) removal rate of tantalum by silica slurries was shown to be directly correlated with the interaction parameters, derived from the NMR relation times rather than with total surface hydroxyl group concentration.     

Chemical mechanical polishing of polymer films

Strategies to reduce capacitance effects associated with shrinking integrated circuit (IC) design rules include incorporating low resistivity metals and insulators with low dielectric values, or “low-κ” materials. Using such materials in current IC fabrication schemes necessitates the development of reliable chemical mechanical polishing (CMP) processes and process consumables tailored for them. Here we present results of CMP experiments performed on FLARE™ 2.0 using a specialized zirconium oxide (ZrO₂) polishing slurry. FLARE™ 2.0 is a poly(arylene) ether from AlliedSignal, Inc. with a nominal dielectric constant of 2.8. In addition, we provide insight into possible removal mechanisms during the CMP of organic polymers by examining the performance of numerous abrasive slurries. Although specific to a limited number of polymers, the authors suggest that the information presented in this paper is relevant to the CMP performance of many polymer dielectric materials.     

水合醋酸铈直接热分解制备超细氧化铈及其抛光性能

Ultra fine ceria was prepared by calcining hydrate cerium acetate. The effects of pyrolysis temperature on the particle size, morphology, specific surface area and loose packing density of ceria were investigated, and the removal rate of optical glasses polishing by ceria was determined. The results show that with the increase of pyrolysis temperature, the loose deposit density and crystallinity increases and the specific surface area decreases, however, the particle size decreases firstly and then increases, the minimum medium particle size D₅₀ is 0.47 μm at pyrolysis temperature of 1 000 ℃. The SEM images of ceria prepared by the decomposition at 800 ℃ or at 1 100 ℃ show porous powders or quasi-sphere small particles with loosely agglomeration, respectively. It was found that the removal rate varied with pyrolysis temperature in preparation of ceria and the property of glass polished. The removal rate for three kinds of glasses was in the order of ZF7> F1> K9, and the maximum value appeared at around 1 000 ℃ for ZF7 and F1, and at around 1 100 ℃ for K9.     

能动抛光磨盘的变形实验研究

 能动抛光磨盘实时产生不同的表面变形，在对大口径非球面光学元件进行精磨和抛光时实现与工件表面良好的大尺寸吻合，可以消除传统光学加工采用小尺寸磨头时带来的高频残余误差并提高加工效率。以加工直径1.3m左右，F/2的抛物面光学元件为例，对能动磨盘在不同离轴度时能够产生的变形进行了计算和实验。结果表明，能动磨盘能够以较高精度产生旋转对称或非对称的抛物面形状。对能动磨盘产生变形后的残余误差进行了分析。     

超声搅拌磁流变抛光液的声场仿真分析

为了探究超声搅拌磁流变抛光液的制备及优化工艺,利用多物理场数值计算方法,建立了超声搅拌磁流变抛光液的声场仿真模型。研究了20 kHz下不同液位深度、超声变幅杆探入深度、不同功率下磁流变抛光液的声场分布。通过测量磁流变抛光液的声场强度对声场仿真进行了验证。结果表明:随着距变幅杆距离的增加,声强逐渐减弱,高声强区域主要分布在换能器轴线附近。声强在距变幅杆输出端20 mm范围内急剧衰减,变幅杆最佳探入深度为10 mm,增大功率有助于空化区域的扩大。声场仿真结果与实验测量结果基本一致,对磁流变抛光液的制备提供了数值计算基础。     

抛光工艺参数对熔石英元件低频面形精度的影响

根据工件与抛光盘的相对运动关系及熔石英元件抛光加工材料去除模型,系统分析了转速比和偏心距等参数对材料去除函数的影响。通过理论分析和抛光加工实验,研究了不同工艺参数对低频段面形精度的影响规律。利用高分辨率检测仪器对熔石英元件低频面形误差进行了检测,优选出较佳的抛光工艺参数组合,并进行了相应的实验验证,提出了提高光学元件抛光加工低频面形质量的相应措施。     

微通道板双面抛光过程材料去除特性研究

材料去除率是表征双面抛光加工效率的重要参数,也是影响工件表面质量的关键因素。基于双面抛光加工中工件运动过程的分析,通过向量法构建了工件上任一点的运动轨迹及其相对速度的数学模型。运用Preston模型,建立双面抛光过程中材料去除特性方程,并辅助计算机软件模拟了不同工艺条件下的材料去除特性。最后,通过微通道板的双面抛光实验,研究了不同工艺参数下的材料去除量,验证了理论模拟的正确性。     

LBO晶体超光滑表面抛光机理

胶体SiO2抛光LBO晶体获得无损伤的超光滑表面,结合前人对抛光机理的认识,探讨了超光滑表面抛光的材料去除机理,分析了化学机械抛光中的原子级材料去除机理.在此基础上,对胶体SiO2抛光LBO晶体表面材料去除机理和超光滑表面的形成进行了详细的描述,研究抛光液的pH值与材料去除率和表面粗糙度的关系.LBO晶体超光滑表面抛光的材料去除机理是抛光液与晶体表面的活泼原子层发生化学反应形成过渡的软质层,软质层在磨料和抛光盘的作用下很容易被无损伤的去除.酸性条件下,随抛光液pH值的减小抛光材料的去除率增大;抛光液pH值为4时,获得最好的表面粗糙度.     

6H-SiC衬底片的表面处理

相比于蓝宝石,6H-SiC是制作GaN高功率器件更有前途的衬底.本文研究了表面处理如研磨、化学机械抛光对6H-SiC衬底表面特性的影响.用显微镜、原子力显微镜、拉曼光谱、卢瑟福背散射谱表征了衬底表面.结果表明经过两步化学机械抛光后提高了表面质量.经第二步化学机械抛光后的衬底具有优异的表面形貌、高透射率和极小的损伤层,其表面粗糙度RMS是0.12nm.在该衬底上用MOCVD方法长出了高质量的GaN外延膜.     

大口径非球面元件可控气囊抛光系统

根据大口径非球面光学元件的实际加工需要,设计并制造可控气囊抛光系统,并对机构进行运动学仿真,仿真结果表明,气囊自转轴的运动空间可以满足大口径非球面光学元件的连续进动加工要求。为了证明所设计系统的可加工性,以直径320 mm的圆形平面光学元件进行加工实验。经过该气囊抛光工具24 h的抛光后,工件达到较好的面型精度,光学元件的表面粗糙度由0.272减小到0.068(＝632.8 nm), PV值从1.671降低到0.905。对光学元件的实际加工实验结果表明：可控气囊抛光系统在加工过程中结构稳定性好,符合设计要求,可有效提高加工工件面型精度。