Half-width temperature dependence of nitrogen broadened lines in the ν2 band of H2O

Forty-seven N₂ broadened water vapor line-widths have been measured in the 1845-2140 cm⁻¹ spectral range with a Fourier Transform spectrometer in the 258-330 K temperature range at a spectral resolution of 0.005 cm⁻¹ for the lines with upper state rotational quantum number up to 16. The measured exponents of the temperature dependence of the width exhibit a large range of values from 1.60 to −0.86. Theoretical calculations were made using a semi-empirical technique based on the Anderson theory. The calculated broadening coefficients as well as the temperature exponents for the half-width agree satisfactory with measured values.     

Fluorescence line narrowed spectra of Zn and metal-free cytochrome c

Fluorescence line narrowing (FLN) spectroscopy was used to study the role of the polypeptide chain in influencing the spectrum of Zn-substituted cytochrome c (Zn cyt c) and metal-free cyt c (porphyrin cyt c). For both derivatives the spectra show characteristics of relaxed fluorescence from an inhomogeneously broadened sample. Zero phonon lines and phonon wings can be clearly distinguished, and vibrational frequencies of the ground and excited states were identified. The inhomogeneous distribution width for porphyrin cyt c is slightly wider than that of Zn cyt c and a second population of molecules was apparent in the porphyrin cyt c. The phonon coupling was greater for Zn cyt c than for porphyrin cyt c, which may be due to the extra coupling to the polypeptide chain by metal ligation.This work has been done in partial fulfillment of the requirements for the Doctor of Philosophy degree.     

光刻技术及其新进展

介绍了用于制作半导体集成电路的光刻工艺的概念、分类及发展过程，阐述了当前光刻工艺的主流，并重点介绍了极紫外光刻、X射线光刻、电子束光刻、离子束光刻、纳米图形转印等下一代光刻技术的特点及其面临的挑战。     

Hole Burning and Fluorescence Spectra of Sol-Gel Derived Sm2+-Doped Glasses

Sm2+-doped glasses in the system of Al2O3-SiO2 were prepared by sol-gel processing of metal alkoxides and reacting with H2 gas at 800°C. The hole burning properties of these glasses were investigated. The holes were burned in the 7F0 5D0 line of the Sm2+ ions using a DCM dye laser at 77 K. The hole depth increased with increasing the laser irradiation time, reaching up to 15% of the total intensity within a few hundred seconds. The hole width was 3 cm–1 full width at half maximum. Fluorescence line narrowing spectra of the 5D0 7 F1 transition were analyzed to study the local structure surrounding the Sm2+ ion. It is concluded that the Sm2+ ions are closely coordinated with nine oxygens of the AlO6 group in aluminosilicate glasses and that the addition of Al3+ ions into glass induces an increase in the coordination number of the Sm2+.     

高效全固化钛宝石腔内倍频蓝光和四倍频紫外激光器的研究

用半导体抽运的Q开关YLF倍频激光器抽运钛宝石晶体，在平凹腔内加入组合的石英双折射滤光片压缩线宽，用LBO晶体腔内激发二次谐波，聚焦到BBO上产生四次谐波深紫外光。在抽运功率3．8w时，输出610mW．416nm蓝光。用长焦距的透镜聚焦二次谐波．得到64mW，208nm的紫外激光。基频光的谱线宽度是决定倍频效率的关键因素。实验观察到激光器的频谱宽度与双折射滤光片的带宽有一个数量级的差别，考虑到模式竞争和增益饱和效应，数值模拟了加入双折射滤光片后的钛宝石激光器的实际线宽，结果与实验中测量的数据基本一致。实验还分析了基频光的线宽对二次谐波效率的影响、二次谐波的线宽对四次谐波效率的影响、基频光的波长对四次谐波激发效率的影响。     

离焦激光直写的线宽稳定方法

为了提高激光直写加工衍射光学元件时的线条质量,提出一种离焦激光直写的线宽稳定方法.该方法通过同时调节激光功率和离焦量,使光刻胶的曝光阈值处于线宽对曝光量的变化率较小位置,从而可以弱化线宽对实际曝光量或光刻胶阈值等变化的敏感度,提高利用离焦方法进行衍射光学元件制作时的线宽稳定性.推导了稳定线宽后的光功率控制模型和线宽模型,模型中的变量仅为离焦量,降低了光功率控制的复杂性.利用632.8 nm的He-Ne激光和NA-0.1的物镜在CCD上对采用该方法后的离焦线宽模型进行验证,实验结果与理论模型吻合较好.该方法对于线宽稳定度较高的衍射光学元件制作具有重要价值.     

1.55 μm DFB LD光栅结构的优化设计

模拟分析了不同结构下二级光栅的特性,研究了光栅结构对分布分馈半导体激光器(DFB LD)空间烧孔以及光谱线宽的影响.最终给出优化后的光栅结构.优化后器件的阈值电流为11 mA,边模抑制比达到40 dB,最小线宽105 kHz,很好地抑制了空间烧孔效应.     

光反馈自混合干涉对称折叠算法的精度分析

为了提高对称折叠算法的精度,通过对仿真信号的测量,分析了影响算法精度的几种因素(光反馈水平因子,外腔的非线性运动,抽样速率和转折点的定位),并且给出了改进方法.仿真结果表明,在测量线宽展宽因子之前,需保证光反馈水平因子的准确测量,利用中间干涉条纹进行测量可以减少外腔非线性运动所带来的误差.这一结论对利用对称折叠算法处理实验信号有一定的帮助.     

低阈值光纤激光器稳频特性研究

为了实现低阈值光纤激光器的频率稳定输出,设计了环形腔光纤激光器,以光纤光栅作为波长选择元件,在未泵浦光纤饱和吸收体和其锥形化结构的协同作用下实现激光纵模选择,获得了短光纤饱和吸收体长度下的单纵模激光稳定输出。介绍了未泵浦光纤饱和吸收体选频原理和锥形结构滤波原理,实验研究了不同光纤饱和吸收体长度下激光纵模特性和波长稳定性,以及锥形化光纤饱和吸收体的激光输出特性。实验表明,引入锥形化结构的饱和吸收体后,激光器能够稳定输出1545 nm波长的单纵模激光,并有效降低光纤激光器阈值至7.58 mW,采用延迟自外差方法测得该光纤激光器的线宽小于8 kHz。     

Littrow型光栅外腔半导体激光器的输出特性分析

在讨论光栅外腔半导体激光器理论的基础上.对影响Littrow型光栅外腔半导体激光器输出功率和线宽压窄的各种因素进行了数值模拟分析.研制了单纵模高质量激光输出的Littrow型光栅外腔半导体激光器,在工作电流为400 mA时,连续输出功率达到180 mW,线宽优于1 MHz.