从PZT体系看无铅压电陶瓷的可能应用

总结了主要以(Bi0.5Na0.5)TiO3和NaNbO3为基的无铅压电陶瓷的性能，以Pb(Ti，Zr)TiO3基二元系、三元系压电陶瓷的性能与应用为参考，分析了无铅压电陶瓷可能的器件应用。此外，还对拓宽无铅压电陶瓷应用需要改进的性能提出了建议。     

用于高频谐振器的PbTiO_3基压电陶瓷

传统的PZT压电陶瓷的相对介电常数较大,一般为1 000以上,用于高频谐振器不易与线路匹配;而PbTiO3基压电陶瓷的相对介电常数较小,一般仅为200左右,对于10 MHz以上频率的谐振器,用PbTiO3基压电陶瓷作为压电振子是最佳的选择。本文主要研究用于高频谐振器的MnO2和Nd2O3改性PbTiO3基压电陶瓷的性质。PbTiO3基压电陶瓷的性质的改善是与此种陶瓷的制备工艺,显微结构和电导机制紧密相关的。     

玻璃陶瓷材料中Tm3+离子红外到蓝色上转换发光

系统研究了PbF2+GeO2+WO3ⅩⅣTmF3玻璃陶瓷材料中,在近红外光(1.06μm)激发下,Tm3+离子的发光特性.实验中观测到Tm3+离子的两组峰值位置分别在20920cm-1和22173cm-1的蓝色上转换发光,并证实这两组上转换发光分别与吸收三个和四个光子有关,同时建立了上转换发光的模型.为了选择最佳掺杂浓度,详细地测量了Tm3+离子峰值为20920cm-1的蓝色上转换发光强度与TmF3浓度的关系.     

一种低耐压器件实现的压电陶瓷驱动电源

介绍采用普通低耐压器件三端可调集成稳压块实现的３００Ｖ输出的压电陶瓷驱动电源的设计思想，电路原理，设计计算及安装调试等内容，该设计的特点是电路简单，可靠性好，经济实用。     

Superconductivity and magnetism in niobium doped YBa2Cu3O7 Related high Tc ceramics

Magnetic characterization has been performed on the members of the cuprateniobate RBa₂Cu₂NbO₈ (R = Pr, Nd, and La) series and R_1.5Ce_0.5Sr₂Cu₂NbO₁₀ (R = Pr, Eu, Nd, and Sm) series. The PrBCNO samples show a signature in the magnetization of a magnetic ordering at 12K. The PrCSCNO sample is nonsuperconducting and shows two distinct orderings at 17K and 53K. No such magnetic phase transition is observed down to 2K in the Nd and La based RBCNO materials or the Nd, Sm, and Eu based RCSCNO materials. Measurements of the lower critical field curve, dc irreversibility line, and critical curent densities are reported for each of the superconducting NdCSCNO, SmCSCNO, and EuCSCNO compounds.     

ZnO陶瓷材料的负阻特性

介绍了ＺｎＯ陶瓷的负阻特性，主要研究了ＭｎＯ２掺杂和Ｎｉ２Ｏ３掺杂对ＺｎＯ陶瓷负阻特性的影响。     

Electrical properties and memory effect in the field effect transistor based on organic ferroelectric insulator and pentacene

We have fabricated a field effect transistor (FET) based on an organic ferroelectric insulator and molecular conductor, and investigated the electrical properties and memory effects on the PEN-FET. We have observed a drastic change in the drain current at around the coercive electric fieldE _c of the organic ferroelectric insulator in not only a FET (PEN-FET) based on a pentacene (PEN) film but also a FET (IPEN-FET) based on an iodine doped PEN film. The magnitude of the change of the drain current for the IPEN-FET is 200 times larger than that for the PEN-FET. It is expected from these results that the PEN-FET (especially the IPEN-FET) is an improvement in such devices, since it operates at a low gate electric field accompanied by the appearance of the spontaneous polarization in the organic ferroelectric insulator. In addition, we have found that the drain current for the PEN-FET does not return to the initial drain current ofE _G =0 V/cm for more than one week, even if the gate electric field is changed to 0 V/cm from 500 V/cm(>E _c ). From these results, it is suggested that the PEN-FET becomes a memory device.     

片式多层电容电阻复合元件的研制

采用低温共烧陶瓷(LTCC)技术将电容、电阻元件集成在多层陶瓷基板里,构成了一种新型的片式多层复合元件,并研究了其制造工艺性能和频率特性。结果表明,片式多层电容电阻复合元件制造工艺适合批量化生产,并为片式多层LC滤波器、LTCC基板及器件的研发提供了极好的参考价值。     

Study of archaeological ceramics by total-reflection X-ray fluorescence spectrometry: Semi-quantitative approach

Total-reflection X-ray fluorescence spectrometry has been compared with Instrumental Neutron Activation Analysis in order to test its potential application to the study of archaeological ceramics in the archaeometric field. Two direct solid non-chemical sample preparation procedures have been checked: solid sedimentation and solid chemical homogenization. For sedimentation procedure, total-reflection X-ray fluorescence allows the analysis of the elemental composition with respect to the size fraction but not the average evaluation of the composition. For solid chemical homogenization procedure, total-reflection X-ray fluorescence provides precise (from 0.8% to 27% of coefficient of variation) and accurate results (from 91% to 110% of recovery) for 15 elements (Cr, Hf, Ni, Rb, Al, Ba, Ca, K, Mn, Ti, V, Cu, Ga, Y and Fe) with an easy sample preparation process of the solid clay and without previous chemical treatment. The influence of the particle sizes has been checked by total-reflection X-ray fluorescence sample angle scans and anomalous behaviors have been found for three additional detected elements: As, Sr and Zn, which can be attributed to interference effects of the mineral grain sizes of their associated chemical phases in the total-reflection X-ray fluorescence interference region. The solid chemical homogenization procedure produces data useful for archaeological interpretation, which is briefly illustrated by a case-study. Finally, the decantation procedure data can be also useful for size chemical speciation and, consequently, for alternative environmental total-reflection X-ray fluorescence applications.     

Nb2O5掺杂对ZnO压敏电阻器电性能的影响

本文研究了Ｎｂ＿２Ｏ＿５掺杂以及Ｎｂ＿２Ｏ＿５与ＺｎＯ煅烧对ＺｎＯ压敏电阻器电性能的影响。实验表明，Ｎｂ＿２Ｏ＿５的掺入使压敏电场减少，当Ｎｂ＿２Ｏ＿５含量为０．１％ｍｏｌ时，其压敏电场最小．非线性系数最大。煅烧温度越高，压敏电场越高，非线性系数越大。