贝克曼AllegraTM21R型超高速离心机故障排除一例

贝克曼Allegra^TM 21R型超高速离心机开机后，操作面板上出现错误代码“28”，离心机不旋转。离心机的电机采用无刷感应驱动，由电机驱动电源模块BSMl0GD60DN2驱动离心机的电机。故障是由于电源模块BSMl0GD60DN2损坏引起的。采用东芝三相桥式IGBT电源模块MG25Q6ES42代替BSMl0GD60DN2，并更换已烧毁的栅极电阻后。开机试验，仪器恢复正常。     

可编程光学二值双轨逻辑门

基于双轨逻辑,本文提出一种可级联的并行二值逻辑门。所有十六种二值逻辑运算可以采用偏振半波相延编程来实现。也提出了用电光晶体实现实时编程的方法。本文中给出了实验结果。     

同步辐射x射线光刻制作深亚微米T形栅

x射线光刻非常适合用于深亚微米T形栅的制作,这是因为它的高分辨率、大的曝光视场和高的生产效率足以满足MMIC制造工艺的要求。本文中我们首先对我们的x射线掩模制造工艺进行介绍,然后论述了一种用于制造深亚微米T形栅的两层胶工艺,介绍了所取得的一些研究结果,最后对国内的深亚微米光刻现状进行了简要分析。     

通过直接栅电流测量研究PMOSFET's热载流子损伤

通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律.由此,给出了热载流子引起PMOSFET's器件参数退化的准确物理解释.并证明了直接栅电流测量是一种很好的研究器件损伤生长和器件参数退化的实验方法.     

基于复数权值神经元的数字逻辑最稳健设计

复数权值神经元由于引入了多阈值逻辑而具有更强的性能,文中根据其数学模型,结合二进神经元稳健性的概念,提出了基于该神经元的稳健性定义.并结合定义,实现了基于单个神经元的基本数字逻辑以及异或运算的最稳健设计方案,从而证明了该稳健神经元实现任意数字逻辑的有效性和可行性,说明了其强大的处理能力.     

双折射光纤中克尔效应及光纤－光学逻辑门

本文详细地研究了单模双折射光纤中的克尔效应．讨论了其应用于光纤－光学逻辑门的优点,给出了有关的理论分析和计算结果以实验装置,确定了强度型逻辑门的“１／０”状态,测出了输出光脉冲宽度．理论分析和实验结果符合良好．     

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm²、特征栅漏电容为4.72 pF·mm^-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

5G 功放DPD 的FPGA 宽带实现及自动优化

5G 宽带功放数字预失真器(DPD)的FPGA 实现过程中,常遇到数字处理带宽不够和资源有限问题,对 此,文中提出一种基于双路并行数据流的数字预失真带宽扩展方法和基于Zynq Ultrascale+ MPSoC 的自动化模型优化 验证方法,可快速实现对5G 宽带功放线性化方案的优化。使用该并行处理结构的数字预失真器,克服了数字电路最 大时钟频率造成的对FPGA 线性化带宽的限制,使得数字预失真电路在每个时钟周期内可以处理更多的数据,不仅有 效地增加了数字处理带宽,而且降低了DPD 的功耗。然而,这种带宽增加以消耗更多硬件资源为代价,对此,文中同时 提出了对预失真非线性模型的在线自动优化方法,以简化非线性模型、降低DPD 的硬件资源开销。最后,在Zynq Ultrascale+ FPGA 实验平台上实现了具有两路并行数据处理的I-MSA 自优化数字预失真电路,采用100 MHz 的5G 新无 线电(NR)信号在2. 6 GHz 功率放大器上进行线性化实验验证,获得了满意的预失真性能,验证了所提方法的有效性。     

Ultrashallow depth profiling using SIMS and ion scattering spectroscopy

The accuracy of ultrashallow depth profiling was studied by secondary ion mass spectrometry (SIMS) and high‐resolution Rutherford backscattering spectroscopy (HRBS) to obtain reliable depth profiles of ultrathin gate dielectrics and ultrashallow dopant profiles, and to provide important information for the modeling and process control of advanced complimentary metal‐oxide semiconductor (CMOS) design. An ultrathin Si₃N₄/SiO₂ stacked layer (2.5 nm) and ultrashallow arsenic implantation distributions (3 keV, 1 × 10¹⁵ cm^?2) were used to explore the accuracy of near‐surface depth profiles measured by low‐energy O₂⁺ and Cs⁺ bombardment (0.25 and 0.5 keV) at oblique incidence. The SIMS depth profiles were compared with those by HRBS. Comparison between HRBS and SIMS nitrogen profiles in the stacked layer suggested that SIMS depth profiling with O₂⁺ at low energy (0.25 keV) and an impact angle of 78° provides accurate profiles. For the As⁺‐implanted Si, the HRBS depth profiles clearly showed redistribution in the near‐surface region. In contrast, those by the conventional SIMS measurement using Cs⁺ primary ions at oblique incidence were distorted at depths less than 5 nm. The distortion resulted from a long transient caused by the native oxide. To reduce the transient behavior and to obtain more accurate depth profiles in the near‐surface region, the use of O₂⁺ primary ions was found to be effective, and 0.25 keV O₂⁺ at normal incidence provided a more reliable result than Cs⁺ in the near‐surface region. Copyright © 2007 John Wiley & Sons, Ltd.