焊膏工艺性要求及性能检测方法

焊膏是SMT工艺中不可缺少的钎焊材料,广泛应用于再流焊中;它是由一定的合金粉末和助焊剂均匀混合而成的膏状体。主要对SMT中焊膏的组成及焊膏性能检测方法进行了简要分析。     

提高焊膏印刷质量的工艺改进

焊膏印刷作为SMT工艺的第一步，其质量好坏对SMT工艺有着重要影响。文章通过对焊膏成分、特性的分析，讨论了印刷中各种工艺参数的正确选择；对焊膏印刷中容易出现的质量问题进行了详细分析，指出了产生问题的原因，提出了改进措施。     

面阵列封装器件的贴装技术

面阵列封装器件在电子产品中的使用率逐年上升，如何实现其高速贴装是影响生产线效率的重要因素。从不同的角度论述了面阵列封装器件实现高速贴装的手段与技术。     

球约束凸二次规划的一个新算法

首先利用Lagrange对偶 ,将球约束凸二次规划问题转化为无约束优化问题 ,然后运用单纯形法求解无约束优化问题 ,从而获得原问题的最优解     

采用氮气氛保护的再流焊接技术

叙述了先进再流焊接技术的新发展,描述了提高BGA再流焊接效果的工艺要点,优化倒装芯片再流焊接和固化的新方法。最后,讲述了先进的降低氮消耗量的方法即:通过最大限度地提高潜在收益,以促进再流焊接技术的发展,以此来满足装配厂商的需要。     

分级分段印制插头工艺的研发与应用

介绍了一种采用特殊的设计方法制作分级分段印制插头的工艺生产的印制插头完全没有引线残留的踪迹,对分级分段印制插头的品质做到了有效的控制,可靠性实达到品质要求,通过了实际生产应用的验证,建立了工艺规范和品质管制计划,为批量生产奠定了坚实基础。     

Conducting moisture sensitive reactions under mechanochemical conditions

Dry organic solvents are used for various organic reactions that employ moisture sensitive reagents. The processes to dry these solvents are hazardous and costly. Setting up reactions in an open atmosphere while using moisture sensitive reagents has little to no effect on the rate or yield of the reaction under mechanochemical conditions. We believe this is partly due to the gaseous nature of the water vapor in the air compared to the dissolved water and oxygen in solution.     

Ball Milling for Heterocyclic Compounds Synthesis in Green Chemistry: A Review

This review aims to present the application of ball milling for the synthesis ofdifferent heterocyclic compounds in very good yields. The method is a simple, economical, and ecofriendly process for synthesizing heterocycles, which is a large family of organic compounds. They are extremely important and have wide-ranging pharmaceutical and industrial applications.     

Polyanionic Frameworks in the Lithium Phosphidogermanates Li2GeP2 and LiGe3P3 – Synthesis,Structure, and Lithium Ion Mobility

Recently fast lithium ion conductors were discovered in compounds containing tetrahedral SiP₄^8– and GeP₄^8– units. In the context of material development for all solid state batteries the ternary Li/Ge/P phase system has been further investigated and two new lithium phosphidogermanates were discovered on the lithium poor side of the ternary composition diagram. Li₂GeP₂ crystallizes in space group I4₁/acd with unit cell parameters of a = 12.3069(1) Å and c = 19.0306(4) Å, consists of a framework of Ge₄P₁₀ supratetrahedra, and exhibits an ionic conductivity of 1.5(3)×10^–7 S · cm^–1 at 27 °C. LiGe₃P₃ crystallizes in Pbam with a = 9.8459(5) Å, b = 15.7489(7) Å, and c = 3.5995(2) Å. In LiGe₃P₃ Ge and P atoms form a two dimensional polyanion. The slabs consist of five- and six-membered heteroatomic rings comprising GeP₄ and Ge(P₃Ge) tetrahedra including homoatomic Ge–Ge bonds. A semiconducting behavior with an electronic conductivity of ∼10^–4 S · cm^–1 and a remarkable stability vs. air and moisture is observed.     

LGA器件焊点缺陷分析及解决

文章针对LGA器件回流焊后常见的空洞和锡珠等缺陷,对其产生的原因进行了分析.通过对LGA器件采用预上锡回流工艺和印制板钢网一字架桥开口的方式,提升回流焊过程中焊膏中挥发气体的逸出,并通过对比试验,找到合适的预上锡钢网尺寸,解决了生产中LGA器件焊接常见的空洞大等缺陷.