全文获取类型
收费全文 | 1045篇 |
免费 | 19篇 |
国内免费 | 34篇 |
专业分类
化学 | 653篇 |
晶体学 | 48篇 |
力学 | 4篇 |
综合类 | 1篇 |
物理学 | 223篇 |
无线电 | 169篇 |
出版年
2023年 | 22篇 |
2022年 | 3篇 |
2021年 | 3篇 |
2020年 | 18篇 |
2019年 | 19篇 |
2018年 | 13篇 |
2017年 | 31篇 |
2016年 | 24篇 |
2015年 | 20篇 |
2014年 | 14篇 |
2013年 | 33篇 |
2012年 | 28篇 |
2011年 | 49篇 |
2010年 | 52篇 |
2009年 | 57篇 |
2008年 | 59篇 |
2007年 | 52篇 |
2006年 | 73篇 |
2005年 | 44篇 |
2004年 | 55篇 |
2003年 | 49篇 |
2002年 | 42篇 |
2001年 | 51篇 |
2000年 | 45篇 |
1999年 | 47篇 |
1998年 | 33篇 |
1997年 | 30篇 |
1996年 | 15篇 |
1995年 | 12篇 |
1994年 | 15篇 |
1993年 | 11篇 |
1992年 | 7篇 |
1991年 | 16篇 |
1990年 | 3篇 |
1989年 | 9篇 |
1988年 | 11篇 |
1987年 | 6篇 |
1986年 | 3篇 |
1984年 | 1篇 |
1983年 | 1篇 |
1982年 | 1篇 |
1981年 | 4篇 |
1980年 | 3篇 |
1979年 | 1篇 |
1978年 | 1篇 |
1977年 | 2篇 |
1976年 | 3篇 |
1975年 | 1篇 |
1974年 | 2篇 |
1973年 | 2篇 |
排序方式: 共有1098条查询结果,搜索用时 515 毫秒
1.
2.
3.
We fabricated high-quality InAlN/GaN heterostructures by metal–organic vapor phase epitaxy (MOVPE). X-ray diffraction measurements revealed that InAlN/GaN heterostructures grown under optimal conditions have flat surfaces and abrupt heterointerfaces. Electron mobility from 1200 to 2000 cm2/V s was obtained at room temperature. To our knowledge, this mobility is the highest ever reported for InAlN/GaN heterostructures. We also investigated the relationship between the Al composition and sheet electron density (Ns) for the first time. Ns increased from 1.0×1012 to 2.7×1013 cm−2 when the Al composition increased from 0.78 to 0.89. 相似文献
4.
This paper reports a method to produce networks of crystalline gallium oxide comprised of one‐dimensional (1D) nanostructures. Because of the unique arrangement of wires, these crystalline networks are termed as ‘nanowebs’. Nanowebs are of great technological interest since they contain wire densities of the order of 109 cm–2. A possible mechanism for the fast self‐assembly of crystalline metal oxide nanowires involves multiple nucleation and coalescence via oxidation–reduction reactions at the molecular level. The preferential growth of nanowires parallel to the substrate enabled them to coalesce into regular polygonal networks. The individual segments of the polygonal network consist of both nanowires and nanotubules of β‐gallium oxide. Individual wire properties contribute to a nanoweb’s overall capacity and the implications for devices based on nanowebs are expected to be enormous. 相似文献
5.
The growth of nominally undoped GaSb layers by atmospheric pressure metalorganic vapor phase epitaxy on GaSb and GaAs substrates
is studied. Trimethylgallium and trimethylantimony are used as precursors for the growth at 600°C in a horizontal reactor.
The effect of carrier gas flow, V/III-ratio, and trimethylgallium partial pressure on surface morphology, electrical properties
and photoluminescence is investigated. The optimum values for the growth parameters are established. The carrier gas flow
is shown to have a significant effect on the surface morphology. The optimum growth rate is found to be 3–8 μm/ h, which is
higher than previously reported. The 2.5 μm thick GaSb layers on GaAs are p-type, having at optimized growth conditions room-temperature
hole mobility and hole concentration of 800 cm2 V−1 s−1 and 3·1016 cm-3, respectively. The homoepitaxial GaSb layer grown with the same parameters has mirror-like surface and the photoluminescence
spectrum is dominated by strong excitonic lines. 相似文献
6.
7.
A. Edwards Mulpuri V. Rao B. Molnar A. E. Wickenden W. Holland P. H. Chi 《Journal of Electronic Materials》1997,26(3):334-339
Doping by ion implantation using Si, O, Mg, and Ca has been studied in single crystal semi-insulating and n-type GaN grown
on a-sapphire substrates. The n-and p-type dopants used in this study are Si and O; Mg and Ca, respectively. Room temperature
activation of Si and O donors has been achieved after 1150°C annealing for 120 s. The activation of Mg and Ca acceptors is
too low to measure at both room temperature and 300°C. Using higher doses to achieve a measurable p-type conduction increases
the amount of damage created by the implantation. Rutherford back scattering measurements on this material indicate that the
damage is still present even after the maximum possible heat treatment. Secondary ion mass spectrometry measurements have
indicated a redistribution in the measured profiles of Mg due to annealing. 相似文献
8.
The acute influences of arsenic compounds on the metabolism of porphyrins and heme in various organs of rats after oral or intratracheal administration of disodium arsenate (Na2HAsO4) and gallium arsenide (GaAs) were examined and compared. For the oral administration experiments, 21 or 84 mg of Na2HAsO4, or 2 or 4 g of GaAs, per cm3 saline per kg body weight of each animal was administered to Jcl: Wistar male rats and the organs were removed after exsanguination from the vein of the right axilla under anesthesia with ether, 16 h after administration. In the case of intratracheal administration, rats given 8.2 or 16.4 mg of Na2HAsO4, or 0.2 or 0.4 g GaAs per cm3 saline per kg body weight were examined under the same experimental conditions as for the administration route. Increase in the body weight of rats was suppressed after intratracheal administration of the two arsenic compounds. In these rats the hematocrit value increased significantly. These changes were not shown by the orally administered rats. Elevation in δ-aminolevulinate synthase (ALA-S, EC 2.3.1.37) activity in erythroblasts by Na2HAsO4 was much higher after intratracheal administration than after oral administration. Suppression in the activities of δ-aminolevulinate dehydratase (ALA-D, EC 4.2.1.24) and porphobilinogen deaminase (PBG-D, EC 4.3.1.8) in peripheral erythrocytes by Na2HAsO4 and GaAs were stronger by intratracheal administration than by the oral route. Influences of GaAs on the activity of PBG-D in rat liver were shown to be more effective by oral administration than by the intratracheal route. Oral administration of Na2HAsO4 and GaAs had a stronger suppression effect on the activities of ALA-D and PBG-D in rat kidney. It seems from these results that the different extents of the influence of arsenic compounds might depend on the routes of intake. 相似文献
9.
H. Kuramochi J. Okabayashi F. Takano M. Mizuguchi T. Manago H. Akinaga 《Surface science》2004,550(1-3):192-198
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(
1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs. 相似文献
10.
Millimeter-sized molybdenum nitride (MoN), in the forms of fiber-like prisms or hollow tubes, has been successfully synthesized via thermal ammonolysis of molybdenum polysulfide precursor. The initial morphology of the precursor is well preserved in the final product. This method could be expanded to preparation of other fiber-like nonmetal ceramics without addition of template. The polysulfide precursor (abbreviated to PS), hydrothermally prepared at 30°C (PS1) or 150°C (PS2), was characterized by various methods for better comprehension of the sulfide-nitride topotactic conversion model. 相似文献