排序方式: 共有28条查询结果,搜索用时 0 毫秒
1.
Large eddy simulations of two basic configurations (decay of isotropic turbulence, and the academic plane channel flow) with heat transfer have been performed comparing several convection numerical schemes, in order to discuss their ability to evaluate temperature fluctuations properly. Results are compared with the available incompressible heat transfer direct numerical simulation data. It is shown that the use of regularizing schemes (such as high order upwind type schemes) for the temperature transport equation in combination with centered schemes for momentum transport equation gives better results than the use of centred schemes for both equations. Copyright © 2004 John Wiley & Sons, Ltd. 相似文献
2.
介绍了铁电存储器的存储原理,同时对两种铁电存储器(铁电随机存取存储器和铁电场效应晶体管存储器)的研究进展、当前存在的问题以及我国目前在这一领域的研究现状进行了简单介绍,并对今后的技术发展进行了展望。 相似文献
3.
本文基于TI的MSP-EXP430FR5739 LaunchPad硬件评估套件和IAR EW430 IDE开发环境,研究了MSP430FR5739型MCU的FRAM分区配置方法,分别采用程序代码关键字声明法及面对复杂应用满足更高定制要求时修改XLINK配置文件法共两种方法实现了分区调配,编写了相应测试程序进行实验,验证结果达到了预期.同时对实际应用中FRAM分区后应进行MPU保护做出阐述,本文提出的方法可用于MSP430FR系列其他型号MCU器件的FRAM调配. 相似文献
4.
5.
FM24C16是美国Ramtron公司以铁电晶体为材料生产的铁电存储器(FRAM),和一般的EEPROM比较,其具有无写延时、超低功耗、无限次写入等超级特性,特别适合在那些对写入时间和次数有较高要求的应用场合,而且其与单片机接口电路简单,应用方便.本文对FM24C16的工作原理、应用电路及应用程序做了比较详细的介绍. 相似文献
6.
7.
8.
9.
10.
A novel asymmetrical current-based sensing scheme for 1T1C FRAM is proposed,in which the two input transistors are not the same size and a feedback NMOS is added at the reference side of the sense amplifier.Compared with the conventional symmetrical scheme in Ref.[8],the proposed scheme increases the sense margin of the readout current by 53.9%and decreases the sensing power consumption by 14.1%,at the cost of an additional 7.89%area of the sensing scheme.An experimental FRAM prototype utilizing the prop... 相似文献