全文获取类型
收费全文 | 3822篇 |
免费 | 662篇 |
国内免费 | 468篇 |
专业分类
化学 | 1722篇 |
晶体学 | 31篇 |
力学 | 53篇 |
综合类 | 5篇 |
数学 | 72篇 |
物理学 | 2108篇 |
无线电 | 961篇 |
出版年
2024年 | 9篇 |
2023年 | 75篇 |
2022年 | 93篇 |
2021年 | 105篇 |
2020年 | 136篇 |
2019年 | 114篇 |
2018年 | 102篇 |
2017年 | 158篇 |
2016年 | 162篇 |
2015年 | 175篇 |
2014年 | 217篇 |
2013年 | 265篇 |
2012年 | 235篇 |
2011年 | 286篇 |
2010年 | 210篇 |
2009年 | 281篇 |
2008年 | 211篇 |
2007年 | 307篇 |
2006年 | 336篇 |
2005年 | 191篇 |
2004年 | 192篇 |
2003年 | 186篇 |
2002年 | 152篇 |
2001年 | 147篇 |
2000年 | 109篇 |
1999年 | 95篇 |
1998年 | 91篇 |
1997年 | 67篇 |
1996年 | 55篇 |
1995年 | 32篇 |
1994年 | 36篇 |
1993年 | 27篇 |
1992年 | 21篇 |
1991年 | 11篇 |
1990年 | 11篇 |
1989年 | 22篇 |
1988年 | 5篇 |
1986年 | 3篇 |
1985年 | 5篇 |
1984年 | 2篇 |
1983年 | 1篇 |
1982年 | 2篇 |
1981年 | 4篇 |
1980年 | 3篇 |
1979年 | 2篇 |
1975年 | 2篇 |
1974年 | 1篇 |
排序方式: 共有4952条查询结果,搜索用时 15 毫秒
1.
A sensitive and efficient method for trace analysis of some phenolic compounds using simultaneous derivatization and air‐assisted liquid–liquid microextraction from human urine and plasma samples followed by gas chromatography–nitrogen phosphorous detection 下载免费PDF全文
Mir Ali Farajzadeh Mohammad Reza Afshar Mogaddam Ali Akbar Alizadeh Nabil 《Biomedical chromatography : BMC》2015,29(12):1921-1931
In present study, a simultaneous derivatization and air‐assisted liquid–liquid microextraction method combined with gas chromatography–nitrogen phosphorous detection has been developed for the determination of some phenolic compounds in biological samples. The analytes are derivatized and extracted simultaneously by a fast reaction with 1‐flouro‐2,4‐dinitrobenzene under mild conditions. Under optimal conditions low limits of detection in the range of 0.05–0.34 ng mL?1 are achievable. The obtained extraction recoveries are between 84 and 97% and the relative standard deviations are less than 7.2% for intraday (n = 6) and interday (n = 4) precisions. The proposed method was demonstrated to be a simple and efficient method for the analysis of phenols in biological samples. Copyright © 2015 John Wiley & Sons, Ltd. 相似文献
2.
Textured surface is commonly used to enhance the efficiency of silicon solar cells by reducing the overall reflectance and improving the light scattering. In this study, a comparison between isotropic and anisotropic etching methods was investigated. The deep funnel shaped structures with high aspect ratio are proposed for better light trapping with low reflectance in crystalline silicon solar cells. The anisotropic metal assisted chemical etching (MACE) was used to form the funnel shaped structures with various aspect ratios. The funnel shaped structures showed an average reflectance of 14.75% while it was 15.77% for the pillar shaped structures. The average reflectance was further reduced to 9.49% using deep funnel shaped structures with an aspect ratio of 1:1.18. The deep funnel shaped structures with high aspect ratios can be employed for high performance of crystalline silicon solar cells. 相似文献
3.
Organic devices like organic light emitting diodes (OLEDs) or organic solar cells degrade fast when exposed to ambient air. Hence, thin-films acting as permeation barriers are needed for their protection. Atomic layer deposition (ALD) is known to be one of the best technologies to reach barriers with a low defect density at gentle process conditions. As well, ALD is reported to be one of the thinnest barrier layers, with a critical thickness – defining a continuous barrier film – as low as 5–10 nm for ALD processed Al2O3. In this work, we investigate the barrier performance of Al2O3 films processed by ALD at 80 °C with trimethylaluminum and ozone as precursors. The coverage of defects in such films is investigated on a 5 nm thick Al2O3 film, i.e. below the critical thickness, on calcium using atomic force microscopy (AFM). We find for this sub-critical thickness regime that all spots giving raise to water ingress on the 20 × 20 μm2 scan range are positioned on nearly flat surface sites without the presence of particles or large substrate features. Hence below the critical thickness, ALD leaves open or at least weakly covered spots even on feature-free surface sites. The thickness dependent performance of these barrier films is investigated for thicknesses ranging from 15 to 100 nm, i.e. above the assumed critical film thickness of this system. To measure the barrier performance, electrical calcium corrosion tests are used in order to measure the water vapor transmission rate (WVTR), electrodeposition is used in order to decorate and count defects, and dark spot growth on OLEDs is used in order to confirm the results for real devices. For 15–25 nm barrier thickness, we observe an exponential decrease in defect density with barrier thickness which explains the likewise observed exponential decrease in WVTR and OLED degradation rate. Above 25 nm, a further increase in barrier thickness leads to a further exponential decrease in defect density, but an only sub-exponential decrease in WVTR and OLED degradation rate. In conclusion, the performance of the thin Al2O3 permeation barrier is dominated by its defect density. This defect density is reduced exponentially with increasing barrier thickness for alumina thicknesses of up to at least 25 nm. 相似文献
4.
本文介绍了薄膜隧道发光结的基本结构、发光机理,阐述了其I-V特性中的负阻现象。简单介绍了MIM结构负阻的几种解释,根据热像仪照片和低温测试结果分析,再结合Dearmaley导电模型,我们提出了MIM负阻的物理模型,理论与实验符合较好,最后分析了负阻现象的应用前景。 相似文献
5.
Modeling ion implantation of HgCdTe 总被引:2,自引:0,他引:2
H. G. Robinson D. H. Mao B. L. Williams S. Holander-Gleixner J. E. Yu C. R. Helms 《Journal of Electronic Materials》1996,25(8):1336-1340
Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction
is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant
doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by
Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T
by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution
depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released,
they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results
of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing
conditions, including implant dose, annealing temperature, and doping background. 相似文献
6.
7.
The consequences of Ge deposition on Br-terminated Si(1 0 0) were studied with scanning tunneling microscopy at ambient temperature after annealing at 650 K. One monolayer of Br was sufficient to prevent the formation of Ge huts beyond the critical thickness of 3 ML. This is possible because Br acts as a surfactant whose presence lowered the diffusivity of Ge adatoms. Hindered mobility was manifest at low coverage through the formation of short Ge chains. Further deposition resulted in the extension and connection of the Ge chains and gave rise to the buildup of incomplete layers. The deposition of 7 ML of Ge resulted in a rough surface characterized by irregularly shaped clusters. A short 800 K anneal desorbed the Br and allowed Ge atoms to reorganize into the more energetically favorable “hut” structures produced by conventional Ge overlayer growth on Si(1 0 0). 相似文献
8.
9.
C. Maurel 《Surface science》2006,600(2):442-447
Light emitted in the tunneling junction of a scanning tunneling microscope has been used to establish the electrical characteristics of nanojunctions made of Au islands deposited on flat MoS2 surfaces. It is shown that these characteristics are those of rectifying contacts when the gold islands are isolated and that they evolve toward those of ohmic contacts when the island density increases. It is observed that the rectifying behavior also evolves over time as on infinite metal/semiconductor contacts. Using the STM tip, single gold islands can be manipulated on the MoS2 surface so that their electrical behavior can be changed depending on their position with regard to the other islands. 相似文献
10.