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71.
The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (Eg2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (Eg1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time. 相似文献
72.
We report spectroscopic characterization of epitaxial YBCO thin films grown on LaAlO3 by pulsed laser deposition. Raman spectroscopy and spectroscopic ellipsometry were used for film characterization and the results were correlated with X-ray diffraction measurements. The mentioned techniques allowed us to analyze crystallographic, micro-structural, and morphological properties of YBCO thin films. We also demonstrated that relatively low resolution Raman spectroscopy and spectroscopic ellipsometry are reliable techniques for a rapid and non-destructive characterization of epitaxial YBCO thin films. 相似文献
73.
The effect of the cation concentration, hydrolysis temperature, and composition in the CeO2–ZrO2 system on the direct precipitation of ceria–zirconia solid solutions and the structure of the precipitates from acidic aqueous solutions of (NH4)2Ce(NO3)6 and ZrOCl2 by hydrolysis under hydrothermal conditions were investigated. Nanometer-sized (8–10 nm) ceria–zirconia solid solution particles in a composition range of 0 to 60 mol% ZrO2 were directly precipitated from the solutions with total metal cation concentration less than 0.2 mol/dm3 by simultaneous thermal hydrolysis at 150–240°C. The crystalline phase of the precipitates gradually changed from cubic and/or tetragonal to monoclinic with increasing the cation concentration of the solution from 0.2 to 0.8 mol/dm3 at the starting composition of 50 mol% ZrO2 under hydrolysis condition of 150°C for 48 h, which was attributed to decrease in the supply of hydrolyzed Ce component caused by decrease in the hydrolysis ratio of (NH4)2Ce(NO3)6. Ceria–zirconia solid solutions containing large amount of ZrO2 maintained high specific surface area and small-sized crystallite after heat-treatment at 900–1000°C for 1 h. 相似文献
74.
K. Franke 《Surface science》2005,585(3):144-154
Polarization switching in scanning force microscopy (SFM) is influenced by both electric fields and stress, whereby the latter can arise inherently from Maxwell stress. We discuss the influence of electric charges and of the polarization asymmetry on the switching behaviour. For single crystallites of PZT(53/47) thin films, the sectors for ferroelectric, ferroelastoelectric and ferroelastic switching are represented in a field-stress map. The influence of stress on the second harmonic of the SFM is also discussed. 相似文献
75.
Photoinduced optical and second-order non-linear optical effects in the interfaces separating In2O3–SiON (O/N ratio equals 1) films doped with A1, Sn and glass substrates were investigated using the photoinduced optical second harmonic generation. The photoinduced effective second-order optical susceptibility deff (at λ=1.76 μm) shows a good correlation with the linear optical susceptibility, particularly with the shift of the absorption edge. The maximal response of the photoinduced optical response signal was observed for the pump–probe delaying time of 34 ps. The performed experimental measurements indicate that the observed effects are mainly caused by the interface potential gradients on the border glass–In2O3–SiON film and by additional polarization due to insertion of the Al and Sn atoms. The observed phenomenon may be proposed as a sensitive tool for investigation of thin semiconducting interfacial layers and simultaneously such films may be used as materials for non-linear optical devices. 相似文献
76.
D. Behera T. Mohanty S. K. Dash T. Banerjee D. Kanjilal N. C. Mishra 《Radiation measurements》2003,36(1-6):125-129
Swift heavy ions (SHI) with electronic energy loss exceeding a value of 14.4 keVnm−1 create amorphized latent tracks in YBCO type superconductors. In the low fluence regime of an ion beam where tracks do not overlap, a decrease of the superconducting transition temperature as probed through resistivity studies, is not expected due to availability of percolating current paths. The present study however shows Tc decrease by about 1–3 K in thin films of YBCO when irradiated by 250 MeVAg ions at 79 K at a fluence of 5×1010–1×1012 ionscm−2. The highest fluence used in the present study is three times less than the fluence where track overlapping becomes significant. The Tc tends to increase towards the preirradiation value on annealing the films at room temperature. To explain this unusual result, we consider the effect of ion irradiation in inducing materials modification not only through creation of amorphized latent tracks along the ion path, but also through creation of atomic disorder in the oxygen sublattice in the Cu–O chains of YBCO by the secondary electrons. These electrons are emitted radially from the tracks during the passage of the SHI. Considering the correlation between the charge state of copper and its oxygen coordination, we show in particular that the latter process is a consequence of the inelastic interaction of the SHI induced low-energy secondary electrons with the YBCO lattice, which result in chain oxygen disorder and Tc decrease. 相似文献
77.
在超高真空分子束外延(MBE)生长技术中,反射式高能电子衍射仪(RHEED)能实时显示半导体和金属外延生长过程,给出薄膜表面结构和平整度的信息,成为MBE必备的原位表面分 析仪.为了研究氧化物薄膜如高温超导(YBa2Cu3O7) 、铁电薄膜(Sr1-xBax TiO3)及它们的同质和异质外延结构的生长机理,获得高质量的符合各种应用 需要的氧化 物多层薄膜结构,在常规的制备氧化
关键词:
高温超导薄膜
RHEED 相似文献
78.
We have used the periodic quantum-mechanical method with density functional theory at the B3LYP level in order to study TiO2/Sn doped (1 1 0) surfaces and have investigated the structural, electronic and energy band properties of these oxides. Our calculated relaxation directions for TiO2 is the experimental one and is also in agreement with other theoretical results. We also observe for the doped systems relaxation of lattice positions of the atoms. Modification of Sn, O and Ti charges depend on the planes and positions of the substituted atoms. Doping can modify the Fermi levels, energy gaps as well as the localization and composition of both valence and conduction band main components. Doping can also modify the chemical, electronic and optical properties of these oxides surfaces increasing their suitability for use as gas sensors and optoelectronic devices. 相似文献
80.
XPS measurement revealed that the original state of TiO2 was changed to Ti2O3 and TiO by ion bombardment. TiO2 decreased and Ti2O3 increased at the initial stage. TiO increased at a later stage than Ti2O3. Each of them saturated after enough sputtering time.A formulation was proposed in order to explain the change of XPS spectra for oxides as a function of ion sputtering time. This formulation was based on reaction equations that contain two reduction processes (from TiO2 to Ti2O3 and from Ti2O3 to TiO), and sputtering effects. Using four fitting parameters (two reduction coefficients, sputtering yield and information depth), the present formula was fitted to the experimental results. The fitting results agree satisfactorily with the experimental results. The calculation shows that the reduction coefficient from TiO2 to Ti2O3 is about ten times larger than that from Ti2O3 to TiO. This calculation predicts that surface composition of an oxide that is changed by ion bombardment will reach a different value depending on its bulk composition. Moreover, the present formulation can determine the chemical states of compounds changed by ion bombardment. 相似文献