Aryl Radical Geometry Determines Nanographene Formation on Au(111)

The Ullmann coupling has been used extensively as a synthetic tool for the formation of C?C bonds on surfaces. Thus far, most syntheses made use of aryl bromides or aryl iodides. We investigated the applicability of an aryl chloride in the bottom‐up assembly of graphene nanoribbons. Specifically, the reactions of 10,10′‐dichloro‐9,9′‐bianthryl (DCBA) on Au(111) were studied. Using atomic resolution non‐contact AFM, the structure of various coupling products and intermediates were resolved, allowing us to reveal the important role of the geometry of the intermediate aryl radicals in the formation mechanism. For the aryl chloride, cyclodehydrogenation occurs before dehalogenation and polymerization. Due to their geometry, the planar bisanthene radicals display a different coupling behavior compared to the staggered bianthryl radicals formed when aryl bromides are used. This results in oligo‐ and polybisanthenes with predominantly fluoranthene‐type connections.     

MoS2摩擦表面氧化与电子转移

利用电子自旋共振谱（ＥＳＲ）和Ｘ射线光电子谱（ＸＰＳ）研究了ＭｏＳ２摩擦表面的氧化行为和摩擦表面氧化的电子转移,发现Ｍｏ２在摩擦失效过程中Ｍｏ＾４＋与氧作用生成稳定的Ｍｏ＾６＋终态氧化物,其间经过Ｍｏ＾５＋过渡态。深入揭示了ＭｏＳ２摩擦表面氧化过程的复杂性,指出Ｍｏ在摩擦表面氧化过程中以多种化学状态存在,Ｍｏ原子的氧化是Ｍｏ４ｄ轨道上的单电子转移过程。     

水热法合成纳米花状二硫化钼及其微观结构表征

本文以钼酸钠、硫代乙酰胺为前驱体, 硅钨酸为添加剂, 成功用水热法合成高纯度纳米花状二硫化钼. 产物特性用X射线衍射(XRD)、能量色散谱(EDS)、扫描电子显微镜(SEM)进行表征. XRD和EDS图显示实验产物为二硫化钼, 且其结晶度和层状堆垛良好. SEM图谱则表明二硫化钼为纳米花状结构, 颗粒直径300 nm左右, 由几十上百片花瓣组成, 每片花瓣厚度十个纳米左右. 通过以硅钨酸为变量的梯度实验, 研究发现, 硅钨酸对于纳米花状MoS₂的形成具有重要作用, 不添加硅钨酸, 无法形成纳米花状MoS₂, 此外, 硅钨酸的剂量会影响合成MoS₂的大小和形貌. 本文还对纳米花状二硫化钼的形成机理做了初步的讨论.     

陡倾滑面滑坡锯齿形抗滑桩力学性能研究

陡倾滑面滑坡推力竖向分力显著,基于滑坡推力水平假定与普通抗滑桩相互作用不充分这一问题,建立锯齿形抗滑桩结构。依据梯形分布滑坡推力的假设,推导了受荷段内力计算公式,采用Winkler弹性地基理论推导了锚固段内力计算公式,并开展锯齿形抗滑桩的力学性能研究。分析表明,(1)随着滑面倾角的增加,锯齿形抗滑桩的受荷段、锚固段的弯矩、剪力以及侧应力均减小,内力减小幅度随之增大;(2)滑面倾角在20°～40°时,随着滑面倾角的增加,锚固段的理论最小长度在逐渐增加,40°时锚固段的长度为4.2 m达到最大值,且该长度仅占整个桩长35%,远小于按现行规范取得的锚固段长度最大值(1/2总桩长),桩侧摩阻力就可以完全满足竖向力学平衡;(3)将锯齿形抗滑桩与普通抗滑桩内力对比,受荷段和锚固段的弯矩减小34%、剪力减小36%及桩侧应力减小幅度大于30%,力学性能良好。     

Spin thermoelectricity in dualhydrogenated zigzag silicene nanoribbons with surface adsorptions

The buckled structure of silicene provides a feasible pathway to influence its electric and magnetic properties via surface adsorptions. Here, we investigate the magnetic and spin thermoelectric transport properties of dual-hydrogenated zigzag silicene nanoribbons (ZSiNRs) without/with the hydrogen adsorption. The band gaps for two spin channels in ZSiNRs under the hydrogen adsorption are shifted near the Fermi level, leading to the appearance of spin Seebeck effect. Using a temperature difference, one can derive the carriers with the different spin index to flow in the opposite direction. Moreover, a large rectification ratio close to 10⁵ at room temperature is achieved for the spin current, and the charge current exhibits a remarkable negative differential thermoelectric resistance (NDTR) behavior. The results presented here are fascinating potential applications in the fields of silicon-based spin caloritronic devices.     

Tailoring MoS2 Ultrathin Sheets Anchored on Graphene Flexible Supports for Superstable Lithium‐Ion Battery Anodes

2D MoS₂ has a significant capacity decay due to the stack of layers during the charge/discharge process, which has seriously restricted its practical application in lithium‐ion batteries. Herein, a simple preform‐in situ process to fabricate vertically grown MoS₂ nanosheets with 8–12 layers anchored on reduced graphene oxide (rGO) flexible supports is presented. As an anode in MoS₂/rGO//Li half‐cell, the MoS₂/rGO electrode shows a high initial coulomb efficiency (84.1%) and excellent capacity retention (84.7% after 100 cycles) at a current density of 100 mA g^?1. Moreover, the MoS₂/rGO electrode keeps capacity as high as 786 mAh g^?1 after 1000 cycles with minimum degradation of 54 µAh g^?1 cycle^?1 after being further tested at a high current density of 1000 mA g^?1. When evaluated in a MoS₂/rGO//LiCoO₂ full‐cell, it delivers an initial charge capacity of 153 mAh g^?1 at a current density of 100 mA g^?1 and achieves an energy density of 208 Wh kg^?1 under the power density of 220 W kg^?1.     

Bi_2S_3纳米带的制备及其谱学性能研究

以硝酸铋、硫代乙酰胺和氨三乙酸等为原料,利用水热法在180℃下反应12h得到Bi2S3纳米带.X射线粉末衍射结果表明产物对应于正交晶相的Bi2 S3(JCPDS:17-320),晶胞参数为a=1.110 6 nm,1,b=1.099 3 nm,c=O.389 2 nm,与文献报道值(a=1.114 9nm ,b=1.1304 nm,c=O.3981 nm)基本一致;通过透射电镜观察其形貌为均匀的带状,宽约100 nm;高分辨透射电镜照片显示晶体沿y轴优先生长;通过对x射线光电子能谱分析得到Bi和S的原子个数比例约为2:3,与目标产物Bi2 S3的计量比一致;测试显示Bi2S3纳米带的拉曼吸收峰出现在195 cm-1处,与块体Bi2s3(236 cm-1)相比,其吸收峰红移了41 cm-1,体现了纳米材料的表面效应.紫外-可见吸收光谱研究发现Bi2S3纳米带在450nm左右有吸收,计算得到Eg约为1.58 eV(块体Bi2S3的巨为1.3 eV),在光电领域有潜在的应用价值.     

区域分割的计数问题

首先讨论了k维欧氏空间被n 个(k-1)维超平面分割的区域计数问题.然后用角形线和锯齿形线分割平面,采用递归和余差公式两种方法,解决了平面区域分割的计数问题.最后对分割问题的条件与限制进行了讨论.     

The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons

By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of perfect and defected bilayer armchair graphene nanoribbons (BAGNRs) under finite bias. Two typical defects which are placed in the middle of top layer (i.e. single vacancy (SV) and stone wale (SW) defects) are examined. The results reveal that in both perfect and defected bilayers, the maximum current refers to β-AB, AA and α-AB stacking orders, respectively, since the intermolecular interactions are stronger in them. Moreover it is observed that a SV decreases the current in all stacking orders, but the effects of a SW defect is nearly unpredictable. Besides, we introduced a sequential switching behavior and the effects of defects on the switching performance is studied as well. We found that a SW defect can significantly improve the switching behavior of a bilayer system. Transmission spectrum, band structure, molecular energy spectrum and molecular projected self-consistent Hamiltonian (MPSH) are analyzed subsequently to understand the electronic transport properties of these bilayer devices which can be used in developing nano-scale bilayer systems.