精密角接触球轴承的固体润滑失效分析

角接触球轴承是航天器的许多重要功能的实施部件，因而对其润滑性能的要求极为严格，迫切需要弄清其润滑失效机理。因此，对ＭｏＳ２溅射膜润滑的Ｃ６２０５球轴承进行了寿命试验，进而对经过丙酮超声清洗的各元件工作面的形貌和组成作了系统分析。     

压荷载下类岩石材料中的锯齿形裂纹分析

针对类岩石材料的复杂性和非均质性，特别是材料中一些强度相对较弱的晶界的存在等，对形状较为复杂的两种锯齿形裂纹：内张型滑动裂纹和单翼滑动裂纹的应力强度因子进行了分析．结合经典的滑动裂纹模型，讨论了裂纹起裂角、侧压以及翼裂长度等对应力强度因子的影响．分析的结果为进一步研究类岩石材料的断裂损伤机理提供了理论基础．     

二硫化钼润滑失效的单电子转移机理研究

ＭｏＳ２是一种性能优良的固体润滑剂，为了考察它的润滑失效机理，在给定的试验条件下，对其在不同温度大气环境中的氧化状态与活性作了顺磁共振和Ｘ射线光电子能谱分析研究．在Ｍｏ混合氧化物的Ｍｏ３ｄ包络峰中解叠出２组峰，分别归属Ｍｏ６＋，Ｍｏ５＋和Ｍｏ４＋这３种化学状态，Ｍｏ５＋在４ｄ轨道上有１个未成对的电子，这是Ｍｏ氧化物中的一种过渡化合状态，具有４ｄ电子构型和顺磁性，可以在从室温到５００℃范围内稳定存在，而且活性较好，在光电离作用下形成Ｍｏ的终态化合物．因此，ＭｏＳ２在摩擦过程中由于周围环境和摩擦热等多种因素的作用，在摩擦表面生成Ｍｏ６＋而失效，这是一种单电子转多过程     

NiMo 催化剂上MoS2 形貌与其DBT 加氢脱硫选择性的关系

制备了两个系列不同镍钼负载量的NiMo 催化剂,并用X 衍射、N2 物理吸附和透射电镜进行了表征。以二苯并噻吩
为模型硫化物,在高压固定床微型反应器上对该NiMo 催化剂的加氢脱硫性能进行了评价,研究了MoS2 形貌与催化剂加氢脱
硫选择性之间的关系。结果表明,镍钼负载量对MoS2 形貌有明显的影响。Mo18Ni4 催化剂(含18% MoO3 和4% NiO)上
MoS2 呈多级层状结构,具有较高的加氢脱硫活性和优异的加氢脱硫选择性。加氢选择性与催化剂上活性组分MoS2 的堆积层
数相关联呈很好的线性关系;堆积层数越多,其加氢选择性也越高。     

Quasi-hereditary covers of higher zigzag algebras of type A

In this paper we define and study some quasi-hereditary covers for higher zigzag algebras of type A. We show how these algebras satisfy three different Koszul properties: they are Koszul in the classical sense, standard Koszul and Koszul with respect to the standard module Δ, according to the definition given in [24]. This last property gives rise to a well defined duality and we compute the Δ-Koszul dual as the path algebra of a quiver with relations.     

C1催化剂MoS2/K2CO3/TiO2的制备

根据“盐类及氧化物等在高比表面载体上有自发分散倾向”的原理，制备了一种新型的用于由合成气（H2／CO）合成甲醇的催化剂MoS2/K2CO3/TiO2(DSA),该催化剂具有较好的耐硫性和对甲醇有较高的选择性。     

无机类富勒烯MoS2纳米材料的制备与表征

采用简单的沉淀法 ,利用聚乙二醇作为分散剂 ,盐酸羟铵为还原剂 ,以硫化铵为硫源合成了具有无机类富勒烯结构的纳米二硫化钼 ,通过粉末X射线衍射 (XRD)、扫描电镜 (SEM )和高分辨透射电镜 (HRTEM)等方法对其形貌和结构进行了表征 .结果表明 ,用聚乙二醇做分散剂 ,使其吸附在前驱物表面使颗粒环境呈现出一个相对隔绝的状态 ,在煅烧过程中 ,其空间位阻作用有利于MoS2 纳米颗粒形成无机类富勒烯结构 .     

Impact of the urea–matrix combustion method on the HDS performance of Ni-MoS2/γ-Al2O3 catalysts

A detailed study has been made of the different steps involved upon the preparation of γ-Al₂O₃-supported Ni-Mo HDS catalyst precursors by urea–matrix combustion (UMxC) method. Catalyst performance was evaluated using a tubular fixed-bed reactor and the hydrodesulfurization of thiophene under normal pressure as a model reaction. The oxidic and sulfurized states of the HDS catalysts were characterized by X-ray diffraction (XRD), laser Raman spectroscopy, thermogravimetric analysis (TGA), differential scanning calorimetry (DSC) and high resolution transmission electron microscopy (HRTEM) in order to correlate their oxidic and sulfurized properties with the catalytic behaviour. During the UMxC process several consecutive stages such as melting, dissolution and chemical reactions occurred. There was no evidence of residual carbon and well-dispersed Ni- and Mo-oxo-species supported on alumina were formed.

Urea employed as fuel not only increases the combustion rate, but also undergoes a decomposition process (endothermic reaction) that could contribute to the reduction of the combustion temperature. The urea–matrix combustion method permit to synthesize highly active γ-Al₂O₃-supported Ni-Mo HDS catalysts with a comparable promoter effect than that of corresponding catalyst prepared by impregnation method. In addition, an opposite relation between the activity and the hydrogenation properties was observed indicating that highly active HDS catalyst requires low consumption of hydrogen. Finally, both the ignition temperature and the urea-oxidizer ratio produce no significant changes in the HDS catalytic properties of Ni-Mo-based catalysts.     

Increasing the B/N ratio in boron nitride nanoribbons,a possible approach to dilute magnetic semiconductors

Density functional theory (DFT) employing the local spin density approximation and including correlation functionals is used to show that increasing the boron content relative to the nitrogen content in boron nitride nanoribbons can significantly reduce the band gap making the ribbons semiconducting. Armchair ribbons, but not zigzag ribbons, having excess borons are predicted to have a more stable optimized triplet structure than the optimized singlet structure. The triplet structure is predicted to have a higher density of states at the top of the valence band near Fermi level for the spin down state indicating it could be a ferromagnetic semiconductor. The results suggest a possible new approach to developing ferromagnetic semiconductors.     

Screening and interlayer coupling in multilayer MoS2

The two‐dimensional layered semiconducting di‐chalcogenides are emerging as promising candidates for post‐Si‐CMOS applications owing to their excellent electrostatic integrity and the presence of a finite energy bandgap, unlike graphene. However, in order to unravel the ultimate potential of these materials, one needs to investigate different aspects of carrier transport. In this Letter, we present the first comprehensive experimental study on the dependence of carrier mobility on the layer thickness of back‐gated multilayer MoS₂ field‐effect transistors. We observe a non‐monotonic trend in the extracted effective field‐effect mobility with layer thickness which is of relevance for the design of high‐performance devices. We also discuss a detailed theoretical model based on Thomas–Fermi charge screening and interlayer coupling in order to explain our experimental observations. Our model is generic and, therefore, is believed to be applicable to any two‐dimensional layered system.