Rationally Designed Three-Layered Cu2S@Carbon@MoS2 Hierarchical Nanoboxes for Efficient Sodium Storage

Hybrid materials, integrating the merits of individual components, are ideal structures for efficient sodium storage. However, the construction of hybrid structures with decent physical/electrochemical properties is still challenging. Now, the elaborate design and synthesis of hierarchical nanoboxes composed of three-layered Cu₂S@carbon@MoS₂ as anode materials for sodium-ion batteries is reported. Through a facile multistep template-engaged strategy, ultrathin MoS₂ nanosheets are grown on nitrogen-doped carbon-coated Cu₂S nanoboxes to realize the Cu₂S@carbon@MoS₂ configuration. The design shortens the diffusion path of electrons/Na⁺ ions, accommodates the volume change of electrodes during cycling, enhances the electric conductivity of the hybrids, and offers abundant active sites for sodium uptake. By virtue of these advantages, these three-layered Cu₂S@carbon@MoS₂ hierarchical nanoboxes show excellent electrochemical properties in terms of decent rate capability and stable cycle life.     

Co9S8/MoS2异质结构的构筑及电催化析氢性能研究

利用前驱物形貌导向法,成功制备了Co₉S₈/MoS₂异质结构催化剂,该催化剂在碱性析氢反应（HER）中表现出优异的催化活性及稳定性,其在10 mA·cm^-2处的过电势仅为84 mV.通过X射线粉末衍射（XRD）、透射电子显微镜（TEM）、电子自旋共振（ESR）、拉曼光谱（Raman）、X射线光电子能谱（XPS）和同步辐射（XAFS）等表征,证明了CoS₂/MoS₂在H₂氛围下煅烧形成Co₉S₈/MoS₂的过程中,CoS₂中Co的配位模式从部分八面体向Co₉S₈中的四面体转变,这种转变可活化MoS₂的惰性平面,从而使其更有利于吸附H^*.除此之外,接触角数据表明：该催化剂具有良好的亲水性,有利于电解液渗透及气体分子的迅速扩散,从而促进HER反应速率.由于异质结构间具有强烈的相互作用,该催化剂可表现出良好的结构稳定性.本工作基于Co₉S₈/MoS₂异质结构的成功构筑及对其HER催化机理的充分探讨,为后续硫化物异质结及其在电催化中的应用提供了良好的思路和研究基础.     

Emerging Bottom‐Up Strategies for the Synthesis of Graphene Nanoribbons and Related Structures

The solution‐phase synthesis is one of the most promising strategies for the preparation of well‐defined graphene nanoribbons (GNRs) in large scale. To prepare high quality, defect‐free GNRs, cycloaromatization reactions need to be very efficient, proceed without side reaction and mild enough to accommodate the presence of various functional groups. In this Minireview, we present the latest synthetic approaches for the synthesis of GNRs and related structures, including alkyne benzannulation, photochemical cyclodehydrohalogenation, Mallory and Pd‐ and Ni‐catalyzed reactions.     

Ping‐Pong Energy Transfer in Covalently Linked Porphyrin‐MoS2 Architectures

Molybdenum disulfide nanosheets covalently modified with porphyrin were prepared and fully characterized. Neither the porphyrin absorption nor its fluorescence was notably affected by covalent linkage to MoS₂. The use of transient absorption spectroscopy showed that a complex ping‐pong energy‐transfer mechanism, namely from the porphyrin to MoS₂ and back to the porphyrin, operated. This study reveals the potential of transition‐metal dichalcogenides in photosensitization processes.     

Covalent Assembly of MoS2 Nanosheets with SnS Nanodots as Linkages for Lithium/Sodium‐Ion Batteries

Weak van der Waals interactions between interlayers of two‐dimensional layered materials result in disabled across‐interlayer electron transfer and poor layered structural stability, seriously deteriorating their performance in energy applications. Herein, we propose a novel covalent assembly strategy for MoS₂ nanosheets to realize unique MoS₂/SnS hollow superassemblies (HSs) by using SnS nanodots as covalent linkages. The covalent assembly based on all‐inorganic and carbon‐free concept enables effective across‐interlayer electron transfer, facilitated ion diffusion kinetics, and outstanding mechanical stability, which are evidenced by experimental characterization, DFT calculations, and mechanical simulations. Consequently, the MoS₂/SnS HSs exhibit superb rate performance and long cycling stability in lithium‐ion batteries, representing the best comprehensive performance in carbon‐free MoS₂‐based anodes to date. Moreover, the MoS₂/SnS HSs also show excellent sodium storage performance in sodium‐ion batteries.     

Tunable magnetism through edge functionalization in zigzag green phosphorene nanoribbons

Ab initio density-functional theory calculations with spin polarization are performed to explore magnetic properties in zigzag green phosphorene nanoribbons (ZGPNRs) with no passivation or edge-saturated by H, OH and O chemical species. It is found that antiferromagnetic order at intra-edges is the most energetically favorable for the pristine and oxygen passivated ribbons, while H- or OH-saturated ZGPNRs show nonmagnetic order. It indicates that edge states arising from the unsaturated bonds are vital for the formation of the magnetic moment in the ZGPNRs. The magnitude of the edge magnetism in the pristine and O-saturated ZGPNRs is comparable to that in zigzag black phosphorene nanoribbons. Electronic band structures, spin densities and spd-orbital projected density of states for the studied pristine and O-passivated ZGPNRs are further analyzed to study their electronic properties. The magnetic and electronic properties discovered in the ZGPNRs may suggest potential applications in future spintronics and electronics.     

单层n型MoS2/p型c-Si异质结太阳电池数值模拟

单层二硫化钼(MoS₂)是一种具有优异光电性能的半导体材料,在太阳能能量转换中表现出很大的应用潜力。本文基于AMPS模拟软件,对单层n型MoS₂/p型c-Si异质结太阳电池进行了数值模拟与分析。通过模拟优化,n型MoS₂的电子亲和能为3.75 eV、掺杂浓度为10¹⁸ cm^-3,p型c-Si的掺杂浓度为10¹⁷ cm^-3时,太阳电池能够取得最高22.1%的转换效率。最后模拟了n型MoS₂/p型c-Si异质结界面处的界面态对太阳电池性能的影响,发现界面态密度超过10¹¹ cm^-2·eV^-1时会严重影响太阳电池的光伏性能。     

Enhancing hydrogen evolution of MoS2 basal planes by combining single-boron catalyst and compressive strain

MoS₂ is a promising candidate for hydrogen evolution reaction (HER), while its active sites are mainly distributed on the edge sites rather than the basal plane sites. Herein, a strategy to overcome the inertness of the MoS₂ basal surface and achieve high HER activity by combining single-boron catalyst and compressive strain was reported through density functional theory (DFT) computations. The ab initio molecular dynamics (AIMD) simulation on B@MoS₂ suggests high thermodynamic and kinetic stability. We found that the rather strong adsorption of hydrogen by B@MoS₂ can be alleviated by stress engineering. The optimal stress of −7% can achieve a nearly zero value of ΔG_H (~ −0.084 eV), which is close to that of the ideal Pt–SACs for HER. The novel HER activity is attributed to (i) the B– doping brings the active site to the basal plane of MoS₂ and reduces the band-gap, thereby increasing the conductivity; (ii) the compressive stress regulates the number of charge transfer between (H)–(B)–(MoS₂), weakening the adsorption energy of hydrogen on B@MoS₂. Moreover, we constructed a SiN/B@MoS₂ heterojunction, which introduces an 8.6% compressive stress for B@MoS₂ and yields an ideal ΔGH. This work provides an effective means to achieve high intrinsic HER activity for MoS₂.     

Tuning the electronic properties of hydrogen passivated C3N nanoribbons through van der Waals stacking

The two-dimensional (2D) C₃N has emerged as a material with promising applications in high performance device owing to its intrinsic bandgap and tunable electronic properties. Although there are several reports about the bandgap tuning of C₃N via stacking or forming nanoribbon, bandgap modulation of bilayer C₃N nanoribbons (C₃NNRs) with various edge structures is still far from well understood. Here, based on extensive first-principles calculations, we demonstrated the effective bandgap engineering of C₃N by cutting it into hydrogen passivated C₃NNRs and stacking them into bilayer heterostructures. It was found that armchair (AC) C₃NNRs with three types of edge structures are all semiconductors, while only zigzag (ZZ) C₃NNRs with edges composed of both C and N atoms (ZZCN/ CN) are semiconductors. The bandgaps of all semiconducting C₃NNRs are larger than that of C₃N nanosheet. More interestingly, AC-C₃NNRs with CN/CN edges (AC-CN/CN) possess direct bandgap while ZZ-CN/CN have indirect bandgap. Compared with the monolayer C₃NNR, the bandgaps of bilayer C₃NNRs can be greatly modulated via different stacking orders and edge structures, varying from 0.43 eV for ZZ-CN/CN with AB′-stacking to 0.04 eV for AC-CN/CN with AA-stacking. Particularly, transition from direct to indirect bandgap was observed in the bilayer AC-CN/CN heterostructure with AA′-stacking, and the indirect-to-direct transition was found in the bilayer ZZ-CN/CN with ABstacking. This work provides insights into the effective bandgap engineering of C₃N and offers a new opportunity for its applications in nano-electronics and optoelectronic devices.