The rise of two-dimensional MoS2 for catalysis

Two-dimensional (2D) MoS₂ is used as a catalyst or support and has received increased research interest because of its superior structural and electronic properties compared with those of bulk structures. In this article, we illustrate the active sites of 2D MoS₂ and various strategies for enhancing its intrinsic catalytic activity. The recent advances in the use of 2D MoS₂-based materials for applications such as thermocatalysis, electrocatalysis, and photocatalysis are discussed. We also discuss the future opportunities and challenges for 2D MoS₂-based materials, in both fundamental research and industrial applications.     

基于磁圆二向色谱的单层MoS_2激子能量和线宽温度依赖特性

以二硫化钼(MoS_2)为代表的过渡金属硫属化物属于二维层状材料,样品可以薄至单层.单层MoS_2是一种直接带隙半导体,在纳米逻辑器件、高速光电探测、纳米激光等领域具有广阔的应用前景.在实际应用中,温度是影响半导体材料能带结构和性质的主要因素之一.因此研究单层二维材料能带的温度依赖特性对理解其物理机理以及开展器件应用具有重要的意义.目前,在广泛采用的测量单层MoS_2反射谱的研究中,激子峰往往叠加在一个很强的光谱背底上,难以准确分辨激子的峰位和线宽.基于自行搭建的显微磁圆二向色谱系统,研究了单层MoS_2在65—300 K温度范围内的反射谱和磁圆二向色谱,结果表明磁圆二向色谱在研究单层材料激子能量和线宽方面具有明显的优势.通过分析变温的磁圆二向色谱,得到了不同温度下的A,B激子的跃迁能量和线宽.通过对激子能量和线宽的温度依赖关系进行拟合,进一步讨论了声子散射对激子线宽的影响.     

锯齿型石墨烯纳米窄带中量子霍尔体系的电场调控

应用含自洽格点在位库仑作用的Kane-Mele模型,研究锯齿型石墨烯纳米窄带平面内横向电场对边界带能带结构和量子自旋霍尔(QSH)体系的影响.研究结果显示,当电场强度较弱时,外加电场的方向可以调控自旋向下的两个边界带一起朝不同方向移动,导致波矢q=0.5处自旋向下的两个纯边界态的能量简并劈裂方向可由电场调控;当电场强度进一步增强到超过0.69 V/nm,自旋向下的两个边界带出现较大带隙,能带反转,而自旋向上的电子结构无能隙,系统呈现半金属性,同时QSH体系不再是B类.特别当电场强度为1.17 V/nm时,在自旋向下能带的能隙中,q=0.5处存在自旋向上的纯边界态,意味着在8格点边界处可以产生自旋向上的纯边界电流.当电场强度持续增加时,QSH系统从B类到C类经历3个阶段的变化.当电场强度超过1.42 V/nm后,自旋向上的两个边界带也出现能带反转,分别成为导带和价带,系统成为C类的普通量子霍尔体系.     

Co对单层MoS_2电子结构与磁性的影响

为了研究Co对单层MoS_2电子结构和磁性的影响,本文基于第一性原理,采用数值基组的方法计算了Co吸附式掺杂、Co替代式掺杂单层MoS_2的能带结构、态密度以及分析了其结构的稳定性.结果发现:Co替换式掺杂体系的形成能较低,实验上容易实现;Co在Mo位吸附的稳定性强于在S位吸附;Mo位吸附体系的总磁矩为0.999μB,其磁矩的主要来源于Co原子的吸附所贡献的0.984μB,Co原子的掺杂体系总磁矩为1.029μB,其磁矩的主要由Co原子替代掉一个Mo原子所贡献的磁矩为0.9444μB,相比于吸附体系,Co原子对磁矩的贡献率有所降低;无论是Co吸附在单层MoS_2表面还是Co直接替代掉Mo原子的掺杂体系,Co原子3d轨道的引入是引起单层MoS_2体系磁性的主要原因.     

Se掺杂对单层MoS2电子能带结构和光吸收性质的影响

基于密度泛函理论的第一性原理方法,计算了Se掺杂单层MoS₂能带结构和光吸特性,并分析了对其光解水性质的影响。结果表明：本征单层MoS₂为直接带隙结构,禁带宽度为1.740 eV,导带底电位在H⁺/H₂还原势之上0.430 eV,价带顶电位在O₂/H₂O的氧化势之下0.080 eV,具有可见光催化分解水的能力,但氧化和还原能力不均衡,导致单层MoS₂作为光催化剂分解水的效率不高。通过Se掺杂计算发现,单层MoS₂的禁带宽度变为1.727 eV,相应的光吸收谱变化幅度几乎不变,且体系的形成能较低,表明其热力学稳定性良好。然而,导带底电位调整到H⁺/H₂还原势之上0.253 eV,价带顶电位处于O₂/H₂O的氧化势之下0.244 eV,平衡了氧化与还原能力,单层MoS₂可见光催化分解水的效率得到提高。     

Study of Transport Properties in Armchair Graphyne Nanoribbons: A Density Functional Approach

In present paper, the non-equilibrium Green function (NEGF) method along with the density functional theory (DFT) are used to investigate the effect of width on transport and electronic properties of armchair graphyne (γ-graphyne) nanoribbons. The results show that all the studied nanoribbons are semiconductor and their band gaps decrease as the widths of nanoribbons increase, which will result in increasing current at a certain voltage. Also our results show the promising application of armchair graphyne nanoribbons in nano-electrical devices.     

Complex zigzag flexoelectric walls in the Schlieren textures of MBBA: possibility for determination of two basic Schlieren textures with singular or non‐singular surface points

The flexo‐dielectric behaviour of a homeotropic MBBA nematic layer has been experimentally studied. Asymmetric strong‐weak anchoring of the homeotropic nematic layer was achieved by treating the glass plates – one of them with lecithin ensuring the strong anchoring and the other with usual soap ensuring the weak anchoring. The application of a dc voltage with a sufficient amplitude led to the appearance of a complex texture consisting of gradient flexo‐dielectric deformations including Schlieren texture with many singular points and zigzag flexoelectric walls. The application of additional orienting a.c. voltage brought clarification of the Schlieren texture resembling that of the smectic‐C liquid crystal. Inversely, the application of an ac voltage across the homeotropic nematic layer led to formation of a nice Schlieren texture. The additional application of a d.c. voltage created complex zigzag gradient flexoelectric walls which connected the singular points in the Schlieren texture. In this way, one can determine for the first time how many points in the initial Schlieren texture are singular and how many points are non‐singular. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Compact and high-energy diode-side-pumped Q-switched Nd:YAG slab laser system for space application

We develop a compact and high-energy Nd：YAG slab laser system consisting of an oscillator and an amplifier for space applications. The oscillator is a diode-side-pumped electro-optically Q-switched slab laser with a cross-Porro resonator. The KD＊P Pockels cell with a low driving voltage of 950 V is used to polarization output coupling. The amplifier is a Nd：YAG zigzag slab pumped at bounces. The maximum output pulse energy of 341 m3 with 13 ns pulse duration is obtained from the system at the repetition rate of 20 Hz and the beam quality factors are M2=3.1 and M2=3.5. The beam pointing stabilities of the laser system are 3.05μrad in the X-direction and 3.99 grad in the Y-direction, respectively.     

边修饰Net-Y纳米带的电子结构及机械开关特性的应变调控效应

利用密度泛函理论和非平衡态格林函数相结合的方法,系统地研究了边修饰Net-Y纳米带的电子结构和器件特性的应变调控效应..计算表明:本征纳米带为金属,但边缘的氢或氧原子端接能使其转变为半导体.应变能有效地调控纳米带带隙的大小,适当的应变使能带结构从间接带隙转变为较小的直接带隙,这有利于光的吸收.应变也能改变纳米带的功函数,压缩应变能明显减小功函数,这有利于纳米带实现场发射功能.特别是应变能有效地调控纳米带相关器件的I-V特性,能使其开关比(I_on/I_off)达到106,据此,可设计一个机械开关,通过拉伸及压缩纳米带使其可逆地工作在“开”和“关”态之间.这种高开关比器件也许对于制备柔性可穿戴电子设备具有重要意义.