激光与近相对论临界密度薄层相互作用产生大电量高能电子束

研究了激光与近相对论临界密度等离子体薄层相互作用时所产生的高能电子束的主要特征,包括平均有效温度以及截止能量等.实验结果表明,电子束的电量超过nC量级,平均有效温度可达8 MeV以上.PIC数值模拟证明,近相对论临界密度等离子体内,相对论自透明效应和激光钻孔效应共同形成一条磁化等离子体通道,电子与激光将在角向磁场的协助下发生Betatron共振.激光可将电子直接加速到很高能量,因此电子束平均有效温度("斜坡温度")远远超过Wilks定标率预计的平均温度.该研究为产生高亮度X射线源提供了一种新的可能途径.     

级联弧放电氦等离子体特性研究

采用另加偏压的单阴极弧氦放电直线等离子体装置对氦等离子体的基本特性进行了研究。对氦轴向输运规律做了描述并与光谱测量数据做了定性地比较。实验结果表明,氦等离子体的电子温度与电子密度均随放电电流、约束磁场的增加而增加。氦原子与氦离子的辐射光谱随放电电流、偏压、磁场的变化规律进行了测量分析,同时氦离子对钨靶积分辐照效应进行了观察。这些结果不但提供了氦等离子体的基本特性,对于研究氦离子与面向等离子材料相互作用导致产生气泡、肿胀、脆化损伤等的评估,特别是对将来伴有(n, α)反应时具有一定的参考价值。     

激光等离子体推进技术研究新进展

随着激光技术的发展，激光等离子体推进技术越来越来呈现出其独特的优势，现在已成为当前科学研究和推进领域的研究热点之一．文章对激光等离子体推进技术的应用以及目前的研究进展进行了总结．     

Dust Self‐Organized Structures II. Solutions of Master Equations for Small Diffusion

Master equations for spherical dust structures are solved numerically using the asymptotic solutions at the center of the structures for the case of absence of external ionization and small diffusions. The structures are determined by a single parameter, the external plasma flux at the surface of the structure. The equilibrium states that are possible in a limited range of this parameter are investigated numerically. It is demonstrated that in the range of existence of equilibria the structures are changing their shapes and type of distributions inside the structures. For large external fluxes the ion and dust distributions can have peaks inside the structures while for low external fluxes the dust distribution has a single maximum at the structure center. The lower is the external flux supporting the structure the larger is its size. An increase of the external flux decreases the accumulation of dust and ions at the center. The total number of dust confined by the structure is larger for larger size structures. Estimates of dust crystallization inside structures are given. The role of diffusion is calculated by perturbations and is shown to be small in all structure regions except the structure edges. In the perturbation theory we use the exact expressions of the diffusion coefficients calculated previously numerically. The regions with dust density peaks inside the structures have been calculated with two order of magnitude larger precision that allows to resolve the structure parameter dependencies inside the peaks. It is shown that although in peaks the gradients of all parameters are increased the diffusion flux is still small and that the continuity and hydrodynamic approach are applicable within an accuracy about several %‐s (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

PPCP用固态脉冲电源的实验研究

 介绍了一种采用半导体开关与磁开关、可饱和脉冲变压器相结合技术的固态脉冲电源,此电源可用于脉冲放电等离子体烟气治理。在理论分析的基础上建立了实验模型,通过实验验证了此类电源的可行性,解决了8支晶闸管开关串联的动静态均压及开通同步性问题,并对可饱和脉冲变压器及磁开关的工作特性进行了分析计算。电源在阻性负载上得到峰值电压37.5 kV、前沿101 ns、脉宽1 μs的脉冲,重复频率300 Hz,输出功率10 kW。     

金激光等离子体冕区电离态特性研究

 提出一种测量金激光等离子体电荷态分布与平均电离度的X射线光谱学诊断方法。该方法基于稳态碰撞-辐射近似,考虑电子离子直接碰撞激发与双电子复合两种激发态布居方式,建立了金M带5f-3d跃迁组辐射总强度与离子态分布的耦合方程。根据实验测量的金平面靶激光等离子体冕区辐射的5f-3d跃迁线系的强度分布,诊断得到了金激光等离子体的电荷态分布与平均电离度。此外,还分析了电子温度、电子密度以及双电子复合过程对电荷态分布及平均电离度诊断的影响,并将实验诊断结果与辐射流体力学理论模拟结果及离化平衡动力学计算结果进行了对比分析。结果表明：实验诊断结果与基于CRE近似的离化平衡动力学计算结果近似;当电子温度高于1.5 keV时,双电子复合过程对电离度的诊断结果影响较小。     

高Z等离子体中的双电子复合与电子碰撞激发

 采用准相对论性Hartree-Fock-Relativistic方法与不可分辨跃迁组模型相结合,对Au和Ta元素的类Ni离子的双电子复合速率,以及Au元素类Cu离子的电子碰撞激发速率进行了计算。计算结果表明,对于Au类Ni离子的3d¹⁰-3d⁹4l5f-3d¹⁰4l双电子复合过程以及类Cu离子的3d¹⁰4l-3d⁹4l5f电子碰撞激发过程,当电子温度高于1.0 keV时,电子离子碰撞激发速率随电子温度增加而增加,双电子复合速率随电子温度增加而减小,并且电子碰撞激发对谱线辐射的贡献要比双电子复合大得多。     

磁化分层等离子体中电磁波传播特性研究

采用混合矩阵法,分析了磁化分层等离子鞘套对斜入射电磁波传播特性的影响,分别计算了不同入射角以及外加磁场下电磁波透射系数和极化特性的变化。以GPS导航信号右旋圆极化波(RCP)为例,研究了磁场、电子密度对电磁波右旋圆极化特性的影响。结果表明,外加磁场能够使右旋圆极化波在等离子体中的阻带向高频方向移动,此外,外加磁场能在一定程度上改善斜入射是圆极化波的极化特性,有利于GPS信号接收。     

一维磁化等离子体光子晶体非互易特性研究

在理想条件下,为了研究等离子体回旋频率、等离子体频率、等离子体层厚度、周期常数和入射角在TM模式下对一维磁化等离子体光子晶体的非互易特性的影响,用利用传输矩阵法计算得到的TM波正向和反向传播的透射率来研究其非互易特性。研究结果表明,增加等离子体回旋频率和入射角度能够改善非互易特性;而一味地增加等离子体频率和等离子体层厚度将会使得非互易传播特性变得恶化;增加周期常数不能明显地改善非互易传播特性,但是通过改变外加磁场的施加方式能够改善其非互易特性。     

Identification and elimination of inductively coupled plasma-induced defects in AlxGa1 - xN/GaN heterostructures

By using temperature-dependent Hall,variable-frequency capacitance-voltage and cathodoluminescence (CL) measurements,the identification of inductively coupled plasma (ICP)-induced defect states around the Al x Ga 1-x N/GaN heterointerface and their elimination by subsequent annealing in Al x Ga 1-x N/GaN heterostructures are systematically investigated.The energy levels of interface states with activation energies in a range from 0.211 to 0.253 eV below the conduction band of GaN are observed.The interface state density after the ICP-etching process is as high as 2.75×10 12 cm 2 ·eV 1.The ICP-induced interface states could be reduced by two orders of magnitude by subsequent annealing in N 2 ambient.The CL studies indicate that the ICP-induced defects should be Ga-vacancy related.