Study micromechanism of surface planarization in the polishing technology using numerical simulation method

With the development of semiconductor industry, the chemical mechanical polishing technology has already became the main stream method of realize the surface global flatness. In order to understanding physical essence underlying this technology, the author carried out nanometer polishing experiment of silicon wafer using molecular dynamics (MD) simulation method. The simulation result shows that larger slurry grain generate much more vacancy, dislocation, larger residual stress and intensive plastic deformation than that of small one although the larger grain acquire better surface quality.     

厚度偏差对VCSEL的反射谱和反射相移的影响

采用光学传输矩阵方法分析了厚度偏差对VCSEL的反射谱和反射相移产生的影响。结果表明,反射镜和VCSEL中各层厚度的偏大,将使反射镜的中心波长以及VCSEL的模式波长向长波方向移动,而反射镜和VCSEL中各层厚度的偏小,将使反射镜的中心波长以及VCSEL的模式波长向短波方向移动。将键合界面离有源区稍微远一些,有利于减小其厚度偏差对VCSEL的模式波长的影响。     

GaN基肖特基势垒二极管结构优化研究进展

作为宽禁带半导体器件,GaN基肖特基势垒二极管(SBD)有耐高压、耐高温、导通电阻小等优良特性,这使得它在电力电子等领域有广泛应用。本文首先综述了SBD发展要解决的问题;然后,介绍了GaN SBD结构、工作原理及结构优化研究进展;接下来,总结了AlGaN/GaN SBD结构、工作原理及结构优化研究进展,并着重从AlGaN/GaN SBD的外延片结构、肖特基电极结构以及边缘终端结构等角度,阐述了这些结构的优化对AlGaN/GaN SBD性能的影响;最后,对器件进一步的发展方向进行了展望。     

In situ surface topography measurement method of granite base in scanning wafer stage with laser interferometer

Topography of a granite surface has an effect on the vertical positioning of a wafer stage in a lithographic tool, when the wafer stage moves on the granite. The inaccurate measurement of the topography results in a bad leveling and focusing performance. In this paper, an in situ method to measure the topography of a granite surface with high accuracy is present. In this method, a high-order polynomial is set up to express the topography of the granite surface. Two double-frequency laser interferometers are used to measure the tilts of the wafer stage in the X- and Y-directions. From the sampling tilts information, the coefficients of the high-order polynomial can be obtained by a special algorithm. Experiment results shows that the measurement reproducibility of the method is better than 10 nm.     

Formation of uniform self-assembly monolayers by choosing the right solvent: OTS on silicon wafer, a case study

The main purpose of this research is to show the effects of solvent nature, partial charge distribution and polarity index, on the preparation of uniform silane self-assembly monolayers. Octadecyltrichlorosilane (OTS) on silicon wafers was chosen as a case study. Contrary to what was thought before, dipole moment data are not enough and one needs accompanying data on partial charge distribution and polarity index to predict the best solvent for a uniform self-assembled monolayer (SAM). Results can be applied to other monolayer-solvent systems.     

Static dissolution rate of tungsten film versus chemical adjustments of a reused slurry for chemical mechanical polishing

Tungsten is widely used as deposited layer for the multi-level interconnection structures of wafers. The chemical composition of abrasive slurry plays an important role in chemical mechanical polishing (CMP) process. Removal of tungsten is driven by complex oxidation mechanisms between slurry components. The slurry for tungsten CMP generally contains oxidizer, iron catalyst, complexing agents and stabilizers in a pH adjusted solution of abrasive particles. Interaction between iron complex and H₂O₂ in the slurry is the main factor governing the chemical mode of material removal, oxidation potencies and kinetics.In this study, we investigate the effects of chemical additives in silica (SiO₂)-based slurry on the removal rate of the tungsten film. Experiments were carried out in static batch as a preliminary study to understand and optimize chemical mechanisms in CMP-Tungsten process. Experiment designs were conducted to understand the influence of the chemical additives on the main performances of W-CMP. Used slurry, concentrated and retreated with chemical adjustments, is compared to the original slurry as a reference.     

Ultrasound-assisted handling force reduction during the solar silicon wafers production

Surface adhesion between wet wafers poses great challenges for silicon wafer handling. It has been shown that both the shear and normal handling forces of the solar silicon wafers can be dramatically reduced by using the ultrasound energy. Approximately 20 and 5 times reduction in horizontal and vertical forces were achieved by as low power as 10 W, and a good agreement was found between the measured values and the predictions of a simple model for the effect of longitudinal vibration we developed.     

单晶硅片中的位错在快速热处理过程中的滑移

研究了单晶硅片中维氏压痕诱生的位错在不同气氛下高温快速热处理中的滑移行为.研究表明: 在快速热处理时, 位错在压痕残余应力的弛豫过程中能发生快速滑移; 当快速热处理温度高于1100℃时, 在氮气氛下处理的硅片比在氩气氛下处理的硅片有更小的位错滑移距离. 我们认为这是由于氮气氛下的高温快速热处理在压痕处注入的氮原子钉扎了位错, 增加了位错的临界滑移应力, 从而在相当程度上抑制了位错的滑移. 可以推断氮气氛下的高温快速热处理注入的氮原子增强了硅片的机械强度. 关键词： 快速热处理 位错滑移 机械性能 单晶硅     

SIMS: from research to production control

In 1958, when I joined the Philips Research Laboratories, there were a number of technological problems related to the analysis of solids within Philips that needed analytical support. Because the available (bulk) techniques did not give sufficient results, a new technique, later called secondary ion mass spectrometry (SIMS), was launched that involved the bombardment of a solid target with (primary) energetic ions, followed by mass analysis and ion detection of the sputtered (secondary) target ions. The restrictions of the available infrastructure for such an analytical technique were many: there was no PC for data handling, no internet or database for literature search, the photocopying machine was not yet invented, communication with other scientists had to be done by mail (there was no fax, no E‐mail, no mobile phones) and, what was worse, SIMS was not considered to be a useful analytical technique compared with established techniques! In the years that followed there were many advances:

• (1) The SIMS instrumentation was improved by better ion optics, advanced electronic equipment and was extended from sector type to quadrupole and finally to time‐of‐flight (TOF) mass spectrometers.
• (2) The methodology of SIMS was developed step by step (parameters such as lateral and depth resolution, detection limit and quantitative analysis were all optimized in turn).
• (3) The SIMS technique then made its entrance to solve problems in technology development.

In the last two decades SIMS has become an indispensable, reliable, quantitative analytical technique for production control in integrated circuit technology and the after‐sales care of integrated circuits. The philosophy of the provision of an analytical service at the Philips Research Laboratory (hereinafter referred to as ‘our laboratory’) is discussed. After the initial period, where every method (SIMS, AES, ESCA, RBS, etc.) was claimed to be ‘the only one’ (the panacea), we learned how to organize analytical service cost efficiently and for the optimum benefit of the ‘customer’. The core analytical techniques were concentrated in one department and the customer would profit from synergy by using several appropriate analytical techniques for the same problem. Today, the latest developments in SIMS instrumentation keep pace with the latest challenges of the ultra‐large‐scale integration (ULSI) roadmap for integrated circuits, which indicates the dimensions of the circuits that are predicted for the years to come. Copyright © 2003 John Wiley & Sons, Ltd.     

The preparation and thermoelectric properties of molten salt electrodeposited boron wafers

We have prepared electrodeposited boron wafer by molten salts with KBF₄-KF at 680°C using graphite crucible for anode and silicon wafer and nickel plate for cathodes. Experiments were performed by various molar ratios KBF₄/KF and current densities. Amorphous p-type boron wafers with purity 87% was deposited on nickel plate for 1 h. Thermal diffusivity by ring-flash method and heat capacity by DSC method produced thermal conductivity showing amorphous behavior in the entire temperature range. The systematical results on thermoelectric properties were obtained for the wafers prepared with KBF₄-KF (66-34 mol%) under various current densities in the range 1-2 A/cm². The temperature dependencies of electrical conductivity showed thermal activated type with activation energy of 0.5 eV. Thermoelectric power tended to increase with increasing temperature up to high temperatures with high values of (1-10) mV/K. Thermoelectric figure-of-merit was 10⁻⁴/K at high temperatures. Estimated efficiency of thermoelectric energy conversion would be calculated to be 4-5%.