基于蓝宝石晶片的光纤法布里-珀罗高温传感器

提出并研制了一种基于蓝宝石晶片的光纤法布里-珀罗(法珀)高温传感器.该传感器采用斜端面蓝宝石光纤作传输波导,蓝宝石晶片作法珀干涉仪,"陶瓷插芯-陶瓷套管"结构做为传感器的固定结构.通过傅里叶变换-最小均方差联合算法解调传感器的反射光谱,实现了20℃~1 000℃范围内的温度测量,测试准确度为±2.5℃.该传感器具有体积小、成本低、制作简单以及重复性高的优点,可用于高温环境下稳定、精确的温度测量.     

Feasibility study of SR‐TXRF‐XANES analysis for iron contaminations on a silicon wafer surface

The ability to chemically characterize the contamination on silicon wafers is of critical importance to the semiconductor industry. It provides information on possible unwanted chemical processes taking place on the wafer surface and helps in determining the true source of the contamination problem. This type of information is not readily accessible with standard laboratory equipment. Synchrotron radiation‐induced total reflection X‐ray fluorescence (SR‐TXRF) was combined with X‐ray absorption near‐edge structure (XANES) to determine the chemical state of Fe contaminations on a silicon wafer surface. Main purpose of the study was to test the method for a contamination issue as it could appear in a microelectronic VLSI production fab. Copyright © 2008 John Wiley & Sons, Ltd.     

Real-Time Measurement of Thin Film Thickness During Plasma Processing

An in situ single point two-color laser interferometer is used to monitor in real-time the thickness of thin transparent films during processing. The instantaneous change of film thickness is determined by comparing the measured laser reflection interference to that calculated by a model. The etch or deposition rates of the film are determined within 1–2 seconds. The film thickness is also determined in real-time from the phase difference of the reflected laser intensity between the two laser colors. Use of two-color laser interferometry improves the accuracy of the calculated etch or growth rates of the film considerably. Moreover, the two colors provide a clear distinction between film etching and deposition, which may often occur during the same process, and can not be determined by a single color interferometer. The uniformity of the film's etch or deposition rates across the substrate is monitored by an in situ full-wafer image interferometer. The combined use of these two sensors provide instantaneous information of the film thickness, etch or growth rates, as well as time averaged uniformity of the process rates. This diagnostic setup is very useful for process development and monitoring, which is also suitable for manufacturing environment, and can be used for real-time process control.     

Anomalous Emission And Carrier Effect of Fresh Porous Silicon

IntroductionThe study of luminescent silicon material[1] ,especially porous silicon( PS) ,has received muchattention owing to its potential application ininformation technology. Many models have beenproposed to explain their photoluminescnece andelectroluminescence[1— 11] . Three of the mostpopular models are the quantum confinement[1,2 ] ,surface trapping[3 ,4] ,and oxygen related chemicalspecies formation[5,6] .It has been suggested thatsurface chemical reaction plays an importantrole info…     

Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Vapor phase decomposition (VPD) is a pretreatment technique for collecting trace metal contaminants on the surface of a Si wafer. Such trace metals can be identified and quantified by inductively coupled plasma mass spectrometry (ICP‐MS) or graphite furnace atomic absorption spectroscopy (GF‐AAS). However, the analytical results can be influenced by the Si‐matrix in the VPD samples. This article discusses the approaches to eliminate the interference caused by Si‐matrix. When the thickness of oxide film on wafer surface is less than 100 Å, the quantification results of ICP‐MS analysis will not be affected by Si‐matrix in the VPD samples. Except this, the Si‐matrix must be removed before analysis. An improved heating pretreatment approach has been adopted successfully to eliminate the Si‐matrix. For GF‐AAS analysis, the Si‐matrix will influence the sodium and aluminum analyses. Adding HNO₃ to the graphite furnace tubing after sample injection could also eliminate the interference caused by the Si‐matrix. The method detection limits (MDLs) of VPD‐GF‐AAS and VPD‐ICP‐MS range from 0.04 to 0.55 × 10¹⁰ atoms cm^?2 and 0.05 to 1.73 × 10⁹ atoms cm^?2, respectively. Copyright © 2008 John Wiley & Sons, Ltd.     

On‐Wafer Crystallization of Ultralow‐κ Pure Silica Zeolite Films

A higher goal : An on‐wafer crystallization process to prepare pure silica zeolite (PSZ) MEL‐type films that is superior to the previously used hydrothermal process is reported. These striation‐free MEL‐type films (right, see picture) outperform the traditional spin‐on films (left) in terms of the κ value, mechanical properties, surface roughness, mesopore size, and size distribution.

     

辐照下晶体缺陷浓度的自振频域

采用线性化处理、拓扑映射及数值计算相结合的方法，求解了离子辐照下各向同性晶体薄片中缺陷浓度和温度满足的非线性微分方程组，证明了当可控参量，即缺陷产生速度和恒温箱温度处于某些范围时.会出现缺陷浓度和温度的周期性振动这种时间耗散结构.研究了自振频率与辐射条件和晶体性质的依赖关系,并以硅晶体薄片为例．求出了自振频域及特定的几个自振频率和自振振幅．     

调制激光致硅晶圆载流子辐射扫描成像试验研究

建立了调制激光诱发硅晶圆少数载流子密度波一维模型, 仿真分析了少数载流子输运参数对调制激光诱发载流子辐射信号频域响应的影响. 利用调制激光诱发载流子辐射扫描成像系统对含有表面划痕的硅晶圆进行了扫描成像试验研究. 通过少数载流子密度波模型与多参数拟合方法反求得到了扫描区域的输运参数二维分布图. 该方法得到的少数载流子寿命与利用传统光电导方法测量的少数载流子寿命结果相符; 分析了划痕对载流子输运参数造成的影响, 与光电导方法比较, 该方法可以测量不同位置的全部载流子输运参数且分辨率高.     

Two-channel IR gas sensor with two detectors based on LiTaO3 single-crystal wafer

An infrared (IR) single-element detector based on a lithium tantalate (LiTaO₃) single-crystal wafer has been successfully fabricated. The preparation and design of the device are discussed and analyzed in detail. The processing of a thin LiTaO₃ wafer, the characterization of an IR filter window, and the assembly of the wafer and filter are explained. A LiTaO₃ sensor element, a CMOS amplifier, a narrow-band filter (which can be selected to operate within the appropriate spectral region), and the read-out circuits are set into a TO-18 vessel. Each TO-18-type detector offers a single channel (a single detection wavelength). Two TO-18 detectors with different filters, one acting as a detection channel and the other as a reference, a broadband light source, a circuit board and a flake of wire gauze are assembled and integrated into a gilded gas cell for the purpose of detecting ethene gas.     

Multi-step surface functionalization of polyimide based evanescent wave photonic biosensors and application for DNA hybridization by Mach-Zehnder interferometer

The process of surface functionalization involving silanization, biotinylation and streptavidin bonding as platform for biospecific ligand immobilization was optimized for thin film polyimide spin-coated silicon wafers, of which the polyimide film serves as a wave guiding layer in evanescent wave photonic biosensors. This type of optical sensors make great demands on the materials involved as well as on the layer properties, such as the optical quality, the layer thickness and the surface roughness. In this work we realized the binding of a 3-mercaptopropyl trimethoxysilane on an oxygen plasma activated polyimide surface followed by subsequent derivatization of the reactive thiol groups with maleimide-PEG₂-biotin and immobilization of streptavidin. The progress of the functionalization was monitored by using different fluorescence labels for optimization of the chemical derivatization steps. Further, X-ray photoelectron spectroscopy and atomic force microscopy were utilized for the characterization of the modified surface. These established analytical methods allowed to derive information like chemical composition of the surface, surface coverage with immobilized streptavidin, as well as parameters of the surface roughness. The proposed functionalization protocol furnished a surface density of 144 fmol mm⁻² streptavidin with good reproducibility (13.9% RSD, n = 10) and without inflicted damage to the surface. This surface modification was applied to polyimide based Mach-Zehnder interferometer sensors to realize a real-time measurement of streptavidin binding validating the functionality of the MZI biosensor. Subsequently, this streptavidin surface was employed to immobilize biotinylated single-stranded DNA and utilized for monitoring of selective DNA hybridization. These proved the usability of polyimide based evanescent photonic devices for biosensing application.