旋转圆盘空蚀试验中的硅材料破坏过程研究

利用自制旋转圆盘空蚀试验装置,以流动自来水为介质,对磨片、化抛片、抛光片和刻蚀片等4种硅片进行连续8 h试验以及对磨片进行连续14 h跟踪观察试验,研究硅材料的微观破坏过程,并利用扫描电子显微镜、触针式表面形貌仪和原子力显微镜对其表面微观形貌进行分析.结果表明:经连续8 h空蚀试验后,磨片原始表面的片状层基本消失,表面破坏程度最严重,化抛片次之,其表面尖锐的边缘发生了钝化,抛光片和刻蚀片的表面变化不大;化抛片的表面粗糙度Ra值由227.79 nm降至173.31 nm,抛光片的Ra值由0.483 nm增加至3.455 nm,磨片在14 h试验后其Ra值由0.3304 μm降至0.1965 μm;一定尺度的表面微观形貌对硅材料产生显著影响.     

III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects

In this paper III‐V on silicon‐on‐insulator (SOI) heterogeneous integration is reviewed for the realization of near infrared light sources on a silicon waveguide platform, suitable for inter‐chip and intra‐chip optical interconnects. Two bonding technologies are used to realize the III‐V/SOI integration: one based on molecular wafer bonding and the other based on DVS‐BCB adhesive wafer bonding. The realization of micro‐disk lasers, Fabry‐Perot lasers, DFB lasers, DBR lasers and mode‐locked lasers on the III‐V/SOI material platform is discussed.