Growth of preferentially-oriented AlN films on amorphous substrate by pulsed laser deposition

Preferentially-oriented aluminum nitride (AlN) films are grown directly on natively-oxidized Si (100) substrate by pulsed laser deposition (PLD) in nitrogen (N₂) environment. The AlN preferential orientation changes from (002) to (100) with increasing N₂ pressure. Such different behaviors are discussed in terms of deposition-rate-dependent preferential orientation, kinetic energy of depositing species and confinement of laser plume. Finally, sample deposited at 0.9 Pa is proved to have the highest (002) peak intensity, the lowest FWHM value, the highest deposition rate and a relatively low RMS roughness (1.138 nm), showing the optimal growth condition for c-axis-oriented AlN growth at this N₂ pressure.     

用脉冲光声法测量固体介质中声速

提出了一种利用脉冲光声技术测量固体介质中声速的方法,建立了由YAG激光器和超声探测器组成的实验系统,脉冲激光在固体表面产生脉冲超声波,通过测量脉冲声波在固体内多次反射后的出射信号及固体的厚度,即可算出固体介质中的声速.对黄铜及铝的测量结果表明,这是一种准确性较高的固体介质中声速测量方法.该测量方法可作为综合设计性物理实...     

任意长度喷管型面设计方法在气动激光器喷管设计中的应用

 将一种新的任意长度喷管型面设计（ALN）方法应用于气动激光器喷管型面设计,在相同的喷管出口设计马赫数、喷管喉部高度及喷管扩张段长度条件下,设计了4条ALN方法喷管型面,并和一条最短长度（MLN）喷管型面作对比,采用2维气动激光器增益场仿真方法对5个喷管的小信号增益场进行仿真。计算结果表明:ALN方法可以有效地实现增益场分布的控制,选择合理的设计参数得到的喷管长度比MLN喷管更短,小信号增益更大。     

高功率全固态绿光激光技术研究进展

 报道了高功率全固态腔内和腔外倍频两种绿光激光器研究进展。腔内倍频绿光激光器采用L型腔双棒串接结构,在重复频率10 kHz时,用三硼酸锂晶体倍频获得绿光功率186 W,光-光效率达15.8%。腔外倍频绿光激光器采用主振荡和功率放大器,在重复频率400 Hz时,获得基频激光单脉冲能量1.2 J,采用Ⅱ类相位匹配KTP晶体腔外倍频,获得525 mJ的绿光输出,倍频效率为43.7%。采用偏振合成技术获得了单脉冲能量大于1 J的绿光输出。在该激光放大器实验装置上,进行了双模块热效应补偿技术和受激布里渊散射相位共轭技术实验研究,改善了激光光束质量。     

高功率激光整形脉冲波形控制技术

 针对神光-Ⅲ原型装置物理实验要求的三台阶整形脉冲（三个台阶的脉冲宽度比为1.5∶1.0∶0.5,强度比为1∶4∶16,脉冲总能量为500 J）,并根据该装置的系统构成和具备任意脉冲整形技术,开展了高功率激光整形脉冲波形控制技术研究,通过对基频光段的增益饱和效应和三倍频光的频率转换过程的分析,获得了脉冲时间波形在传输、放大及频率转换过程中的一些变化特点,在此基础上建立了一套简单的预测模型。经过反复迭代计算和多次全系统联机实验获得了实验结果,并在物理实验中得到了应用,初步形成了高功率激光整形脉冲波形的控制方法。     

激光自混合多普勒测速法

利用激光自混合技术结合多普勒测速方法,来改进传统多普勒光路的光路复杂等缺陷.自混合技术中,反馈光会引起腔内的输出增益变化.根据激光的增益变化和频率变化成线性关系,可以对信号进行处理求出多普勒频移.用能量重心校正法对多普勒频移校正,进而得到物体的运动速度的模拟计算值.     

Transformation of the spectrum of the longitudinal modes of a semiconductor laser on introduction of its radiation into fiber light guides

We investigated the influence exerted by the radius of the bend of fiber light guides with light-transmitting cores of different diameters on the transformation of the spectrum of longitudinal modes of the semiconductor laser radiation introduced into them. It is shown that the bended segment of the light guide acts as a spectrum selector, and the spectral composition of the radiation at the output of a light guide is different in different spots of the speckle structure. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 67, No. 2, pp. 260–263, March–April, 2000.     

Atmospheric pressure chemical vapour deposition of selenium and tellurium films by UV laser photolysis of diethyl selenium and diethyl tellurium

Excimer laser‐induced photolysis of gaseous diethyl selenium and diethyl tellurium (C₂H₅)₂M (M = Se, Te) is controlled by cleavage of both M? C bonds, it yields C₁–C₄ hydrocarbons (ethene as major product) and results in chemical vapour deposition of selenium films and nanosized tellurium powder. The selenium and tellurium properties were characterized by X‐ray photoelectron spectroscopy and Scanning electron Microscopy techniques. Copyright © 2001 John Wiley & Sons, Ltd.     

Emittance measurement & optimization for the photocathode RF gun with laser profile shaping

The Laser Undulator Compact X-ray source(LUCX) is a test bench for a compact high brightness X-ray generator,based on inverse Compton Scattering at KEK,which requires high intensity multi-bunch trains with low transverse emittance.A photocathode RF gun with emittance compensation solenoid is used as an electron source.Much endeavor has been made to increase the beam intensity in the multi-bunch trains.The cavity of the RF gun is tuned into an unbalanced field in order to reduce space charge effects,so that the field gradient on the cathode surface is relatively higher when the forward RF power into gun cavity is not high enough.A laser profile shaper is employed to convert the driving laser profile from Gaussian into uniform.In this research we seek to find the optimized operational conditions for the decrease of the transverse emittance.With the uniform driving laser and the unbalanced RF gun,the RMS transverse emittance of a 1 nC bunch has been improved effectively from 5.46 πmm.mrad to 3.66 πmm.mrad.