Effect of vacancy charge state on positron annihilation in silicon

The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseu- dopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simu- lation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.     

基于比例积分控制原理预测钻井全过程原始地层温度的新方法研究

应用比例积分控制原理将瞬态传热模型预测结果与出口 温度实测数据逐步进行反馈可准确预测原始静态地层温度. 为此, 本文基于井下各控制组件质量、动量及能量守恒原理, 建立了实际井身结构与钻具组合条件下循环和停止循环期间井筒-地层温度分布全瞬态传热模型, 应用全隐式有限差分法进行求解, 并引入比例积分控制原理对比分析实测温度与预测温度的误差范围进而精确、 快速获取原始地层温度. 结合一口深井基础数据计算表明, 套管下入深度改变了井筒-地层间热交换效率, 进而影响了近井壁地层温度分布状况; 同时, 钻井过程中循环和停止循环作业过程改变了井下各控制组件的初始条件与边界条件, 致使近井壁原始地层温度分布距离产生变化. 建立的数学模型和研究方法可为石油钻井、地热井开采及地球深部原始地层温度信息准确、 经济、快速获取提供理论基础. 关键词： 原始地层温度 循环与停止循环 瞬态传热模型 比例积分控制原理     

Towards understanding the carbon trapping mechanism in copper by investigating the carbon-vacancy interaction

We propose a vacancy trapping mechanism for carbon-vacancy (C-V) complex formation in copper (Cu) according to the first-principles calculations of the energetics and kinetics of C-V interaction. Vacancy reduces charge density in its vicinity to induce C nucleation. A monovacancy is capable of trapping as many as four C atoms to form CnV (n=1,2,3,4) complexes. A single C atom prefers to interact with neighboring Cu at a vacancy with a trapping energy of 0.21 eV. With multiple C atoms added, they are preferred to bind with each other to form covalent-like bonds despite of the metallic Cu environment. For the CnV complexes, C2V is the major one due to its lowest average trapping energy (1.31 eV). Kinetically, the formation of the CnV complexes can be ascribed to the vacancy mechanism due to the lower activation energy barrier and the larger diffusion coefficient of vacancy than those of the interstitial C.     

NOVEL FORMATION AND DECAY MECHANISMS OF NANOSTRUCTURES ON THE SURFACE

For decades the research on thin-film growth has attracted considerable attention as these kinds of materials have the potential for a new generation of device application. It is known that the nuclei at the initial stage of the islands are more stable than others and certain atoms are inert while others are active. In this paper, by using kinetic Monte Carlo simulations, we will show that, when a surfactant layer is used to mediate the growth, a counter-intuitive fractal-to-compact island shape transition can be induced by increasing deposition flux or decreasing growth temperature. Specifically, we introduce a reaction-limited aggregation (RLA) theory, where the physical process controlling the island shape transition is the shielding effect of adatoms stuck to the stable islands on the incoming adatoms. Moreover, the origin of a transition from triangular to hexagonal and then to inverted triangular as well as the decay characteristics of three-dimensional islands on the surface and relations of our unique predictions with recent experiments will be discussed. Furthermore, we will present a novel idea to make use of the condensation energy of adatoms to control the island evolution along a special direction.     

Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors

Penetration effects of various electrode materials, namely Al, Au, and Cu, on the physical and electrical characteristics of amorphous oxide semiconductor thin film transistors (TFTs) were investigated. Amorphous indium gallium zinc oxide (a-IGZO) TFTs were fabricated with conventional staggered bottom gate structures on a p-type Si substrate. X-ray photoemission spectroscopy (XPS) analysis under the electrode deposition area revealed variations in the oxygen bonding states and material compositions of the a-IGZO layer. Field-emission scanning electron microscopy (FE-SEM) with the line scan of energy dispersive spectroscopy (EDS) showed lateral penetration by the electrode metal. To compare the electrical characteristics of the tested TFTs, the initial current–voltage (I–V) transfer characteristics were examined. In addition, the tested TFTs fabricated using various electrode materials were tested under bias stress to verify the correlations between variations in TFT characteristics and both the metal work function and penetration-induced oxygen vacancies in the channel around the contact area.     

Kinetic investigation on carbamate formation from the reaction of carbon dioxide with amino acids in homogeneous aqueous solution

The kinetics of carbamate formation from the reaction of carbon dioxide with α‐amino acids in D₂O was first investigated by means of nuclear magnetic resonance spectroscopy. Potassium carbonate was used as the CO₂ source. For each amino acid, the maximum carbamate yield, the apparent rate constant for the carbamate formation k_app, and the rate constants for the formation k₁ and the breakdown k_?1 of the carbamate were estimated. Plots of log k₁ or log k_?1 versus pK_a of amino acids indicated that the formation rate k₁ increased with the basicity (pK_a) of amino acid, while the decomposition rate k_?1 decreased. A Br?nsted β value of 0.39 was obtained from the former plot, being in good agreement with the previously reported ones (0.26–0.43). The observed negative pK_a dependence of log k_?1 (Br?nsted α = 0.34) is reasonable, because the carbamate decomposition is acid‐catalyzed and the steady‐state concentration of H⁺ should be higher for weaker basic amines. The charge (σ) and the lone‐pair energy (E_N) at the nitrogen atom of the amino group were calculated. Although log k₁ correlated with σ and E_N, log k_?1 was unrelated with both of these parameters. Considering that the carbamate formation (k₁) is not only base‐catalyzed but should also be promoted by the nucleophilicity of the amino nitrogen, its correlation with σ and E_N in addition to pK_a is rational. The irrelevance of log k_?1 to σ and E_N is not surprising, because σ and E_N are not a direct measure of [H⁺] of the solution. Copyright © 2011 John Wiley & Sons, Ltd.     

Weak temperature gradient effect on the stability of the circular Couette flow

We have investigated the influence of a weak radial temperature gradient in a wide gap and large aspect ratio Couette-Taylor system. The inner cylinder is rotating and can be heated or cooled, the outer cylinder is at rest and immersed in a large thermal bath. We found that a radial temperature gradient destabilizes the Couette flow leading to a pattern of traveling helicoidal vortices occurring only near the bottom of the system. The size of the pattern increases as the rotation frequency of the cylinder is increased. We have characterized the spatiotemporal properties of the pattern and we have shown that it behaves as a wall mode found in the simulation of the complex Ginzburg-Landau equation with homogeneous boundary conditions.     

Study on nitridation processes of β-Ga2O3 single crystal

Nitridated /3-Ga2Os (100) substrate was investigated as the substrate for CaN epitaxial growth.The effects of nitridation temperature and surface roughness of -Ga2O3 wafers on the formation of CaN were studied.     

Submonolayer Au on Si(111) phase diagram

Based on a review of the current literature, a surface phase diagram is proposed for the submonolayer Au on Si(111) system. Kinetic considerations are reviewed and key surface phase diagram features such as the Θ < 0.4 ML metastable structure and the high temperature to Si(111)-(1 × 1)Au second order phase transition are discussed. Experiments to verify certain portions of the phase diagram are proposed.     

限流沿对撞壁射流近壁区混合过程影响的实验研究(一)

本文研究了射流气体撞壁后在放有条形障碍物(以下称之为限流沿)的壁面上的发展过程．实验发现：在限流沿高度合适的情况下，射流气体与限流沿相撞后会脱离壁面形成空间流动。其中，限流沿高度、射流入射角度是决定射流气体撞击限流沿后的发展过程的重要参数，限流沿的存在成功地防止了近壁处的浓混合气层的形成．