机器人气囊抛光去除函数稳定性分析

基于气囊抛光技术和工业机器人平台开发光学元件精密抛光系统,既能满足光学元件快速抛光环节的高效率和高精度的要求,又可以降低开发成本,是极具潜力的抛光设备开发方案。气囊抛光具有稳定的且确定的材料去除特性,通常要求抛光斑稳定性在90%左右。针对机器人气囊抛光系统在多步离散进动抛光过程中机器人末端刚度对气囊抛光稳定性的影响展开研究,通过建立机器人末端刚度矩阵,获得机器人末端变形;基于Preston理论,建立含变形误差的气囊抛光去除函数。最后设计4步离散定点抛光实验验证机器人气囊抛光系统稳定性。根据结果可知抛光斑在XY截面轮廓线上皆呈类高斯形状,且XY截面轮廓线基本一致,具有比较好的重合度;对比不同抛光位置的截面轮廓线,其相对误差小于5%,由此可验证机器人气囊抛光系统在离散进动抛光时具有较好的稳定性。     

内凹面磁流变槽路抛光方法的研究

针对高陡度非球面光学元件的内凹面抛光难题,提出了一种内凹面磁流变槽路抛光方法。设计与待加工内凹面形状匹配的凸模,并在凸模上开出供磁流变液循环通过的槽路,当磁流变液经过设有磁场的区域时发生流变作用形成柔性抛光磨头对内凹面产生材料去除作用。通过工件的旋转和外部磁极的移动完成对整个内凹面的抛光加工。建立了实验平台并开展了相关初步实验和分析。结果表明该方法能够适应内凹面抛光加工的需要,可获得较高表面质量,具有一定的可行性和应用潜力。     

基于超精密机床的光学自由曲面原位测量方法

原位测量是提高光学自由曲面面形精度的重要手段,对于提高加工效率、实现加工过程自动化具有重要意义。由于面形的复杂性,光学自由曲面原位测量一直是超精密测量领域的难题。提出了一种基于超精密机床的光学自由曲面原位测量方法,测量系统由LVDT气浮式传感器、红宝石探针和数据采集部件组成,采用螺旋线方式进行加工及测量路径的设计,通过运动控制接口实现机床坐标和测量数据的实时同步采集,快速精确地获取测量数据。实验结果表明,所加工的双正弦自由曲面的面形误差在±0.5μm范围内。     

稀土抛光粉的生产及应用

综述了稀土抛光粉的各种制造工艺及其在玻璃抛光领域的应用现状，以稀土抛光粉不同的化学成分，粒度，用途等对稀土抛光粉进行了归纳分类，介绍了国内外稀土抛光粉生产企业的产生规律，产品特点，对国内外稀土抛光粉的制备工艺流程进行了归纳，阐述了稀土抛光粉的抛光工艺及抛光机理，重点讨论了稀土抛光粉的应用领域，预测了稀土抛光粉市场的未来，对稀土抛光粉的应用进行了展望。     

Electrochemical instabilities due to pitting corrosion of iron

Electrochemical instabilities induced by chlorides and bromides due to pitting corrosion of iron in sulfuric acid solutions are investigated. Analysis of the electrochemical instabilities as a function of the applied potential and the nature and concentration of the aggressive chemical species shows that the system exhibits a transition from aperiodic bursting of large-amplitude to small-amplitude chaotic oscillations at a critical potential (bifurcation potential, E _bif). The E _bif is determined by the halide concentration inside the pits and coincides with the repassivation potential defined in corrosion studies to explain pit repassivation due to changes in pit chemistry. Surface observations show that, at E < E _bif, an active-passive state dissolution (etching) occurs, while at E > E _bif, a polishing state dissolution is reached. Spatial interactions between early initiated pits and the adjacent electrode surface, oxide film alteration, aggressive species accumulation around active pits, and formation of ferrous salt layers in front of the Fe electrode are all considered to be associated with electrochemical instabilities emerging during pitting corrosion of iron under different dissolution states. Published in Russian in Elektrokhimiya, 2006, Vol. 42, No. 5, pp. 535–550. The text was submitted by the authors in English.     

所见皆是的元素铈

铈是稀土资源中储量最高的元素,具有独特的物理和化学性质,能与其他物质组成品种繁多、性能各异的铈基新材料,广泛应用于冶金、石油化工、机械、轻工、环境保护、农业、军工等领域,是新能源、新兴产业、先进装备制造业等高新技术产业不可或缺的重要组成部分,有着广阔的应用前景。介绍了铈在冶金、发光与发火材料、玻璃与陶瓷工业、抛光粉、催化领域等与生产生活密切相关的领域中的应用。     

Localized corrosion effects and modifications of acidic and alkaline slurries on copper chemical mechanical polishing

This study demonstrates the CMP performance can be enhanced by modifying the corrosion effects of acidic and alkaline slurries on copper. A corrosion test-cell with a polishing platform is connected with the potentiostat to investigate the corrosion behaviors of copper CMP in various alumina slurries. Experiments show that the slurry needs to be maintained in acidic pH<4.56 or alkaline pH>9.05 surroundings and thus better dispersion of alumina particles and less residual contaminant on copper surface can be obtained. The surface defects after copper CMP using acidic and alkaline slurries are described by pitting corrosion mechanisms, and these mechanisms can be regarded as a basis to modify their corrosion effects. Experimental results indicate that it is necessary to modify the dissolution of HNO₃ and oxidization of NH₄OH for copper CMP slurries. Consequently, the slurries of 5 wt.% HNO₃ by adding 0.1 wt.% BTA or 5 wt.% KNO₃ by adding 1 wt.% NH₄OH achieve good CMP performance for copper with higher CMP efficiency factor (CMPEF), 1460 and 486, and lower surface roughness (R_q), 4.019 and 3.971 nm, respectively. It is found that AFM micrographs can support the effectiveness of corrosion modifications for copper CMP in various slurry chemistries.     

锗窗片的光学加工技术

加工平行平面锗窗片,采用双面研磨法修改平行度,用吸附方法粘结成盘,固着磨料抛光模粗抛,沥青抛光模精抛,解决了批量生产中等精度(平行度等于1!@)锗窗片的加工工艺。该工艺也适用于其他晶体材料的平面加工。     

Generation and removal of pits during chemical mechanical polishing process for MgO single crystal substrate

Magnesium oxide (MgO) single crystal is an important substrate for high temperature superconductor, ferroelectric and photoelectric applications. The function and reliability of these devices are directly affected by the quality of polished MgO surface because any defect on the substrate, such as pit or scratch, may be propagated onto device level. In this paper, chemical mechanical polishing (CMP) experiments were conducted on MgO (1 0 0) substrate using slurry mainly comprised of 1-hydroxy ethylidene-11-diphosphonic acid (HEDP) and silica or ceria particles. Through monitoring the variations of the pits topography on substrate surface, generation and removal mechanism of the pits were investigated. The experimental results indicate that the pits were first generated by an indentation or scratch caused by particles in the slurry. If the rate of chemical etching in the defect area is higher than the material removal rate, the pits will grow. If chemical reaction in the defect area is slower than the material removal rate, the pits will become smaller and eventually disappear. Consequently, these findings may provide insight into strategies for minimizing pits during CMP process.     

SiO2-CeO2复合氧化物的制备及抛光性能

采用正硅酸乙酯溶胶-凝胶法制备纳米SiO₂，并与氯化铈溶液混合，用氨水沉淀法制备了SiO₂-CeO₂复合氧化物。利用XRD、SEM等手段对其物相类型、外观形貌、颗粒大小、表面电位等物理性能进行了表征，测定了它们对3种光学玻璃的抛光速率。结果表明：合成复合氧化物具有立方萤石型结构，由Sherrer方程计算的晶粒D_XRD(200)小于100 nm甚至10 nm。随着SiO₂复配量的增加和煅烧温度的降低，晶粒度减小，比表面增大；激光粒度分析仪测定的中位粒径D₅₀在2～3 μm之间，且随SiO₂复配量的增加呈增大趋势，但随煅烧温度的变化在800 ℃时出现极小值，而此时的ζ电位的负值最大，对3种玻璃的抛光速率也最大。证明抛光速率与表面电位及相应的悬浮性、颗粒大小有直接关系。随着SiO₂复配量的增加，复合氧化物的ζ电位负值及对3种玻璃的抛光速率均增大。因此，在CeO₂中复配SiO₂是提高抛光速率的有效方法，此时，最佳的煅烧温度为800 ℃。