天文观测相机低噪声CCD视频处理电路的分析与设计

在讨论天文观测相机低噪声视频处理电路的基础上,对前置放大、差分放大、可编程增益放大、相关双采样及16bit模数转换等关键组成部分进行了分析,给出各组成部分的设计方法。对所设计的低噪声视频处理电路进行了PSPICE仿真和实验测试,仿真和实验结果表明,该视频处理电路在本身引入噪声较小的同时,有效地抑制了CCD的复位噪声和1/f等低频噪声,使天文观测相机的整机噪声<15e-,达到了指标要求。     

蒙特卡罗模拟四极阱中原子的参变激发

在中性原子的磁囚禁实验中,磁阱线圈的电流噪声会激发磁阱中的原子运动,势必对原子团的温度和寿命产生不可忽视的影响。对于非简谐阱,这种激发具有能量选择特性,它又取决于电流噪声的频谱分布。选择了实验中常用的四极阱为研究对象,用直接模拟蒙特卡罗方法来模拟四极阱中原子运动的参变激发现象,得到了原子温度与原子数损失随激发频率的变化关系,并进一步计算了两个共振峰处原子温度随调制时间和调制深度的变化曲线。此外,还研究了弹性碰撞速率对参变激发过程中原子温度上升的影响。这些结果对四极阱参变激发的实验有较好的参考价值。     

基于光子晶体的三端口分插复用器

提出了一种新的基于对称全反射壁的光子晶体分插复用器,与其他类型的光子晶体复用器相比,无需对介质柱进行复杂的调节即可实现100%上/下载,方便实际制造.提出的理论模型与基于二维时域有限差分(FDTD)法的数值实验相当吻合,显示出这种器件具有优良的上/下载性能.     

Design of periodic metal-insulator-metal waveguide back structures for the enhancement of light absorption in thin-film solar cells

To increase the absorption in a thin layer of absorbing material (amorphous silicon, a-Si), a light trapping design is presented. The designed structure incorporates periodic metal-insulator-metal waveguides to enhance the optical path length of light within the solar cells. The new design can result in broadband optical absorption enhancement not only for transverse magnetic (TM)-polarized light, but also for transverse electric (TE)-polarized light. No plasmonic modes can be excited in TE-polarization, but because of the coupling into the a-Si planar waveguide guiding modes and the diffraction of light by the bottom periodic structures into higher diffraction orders, the total absorption in the active region is also increased. The results from rigorous coupled wave analysis show that the overall optical absorption in the active layer can be greatly enhanced by up to 40%. The designed structures presented in this paper can be integrated with back contact technology to potentially produce high-efficiency thin-film solar cell devices.     

~6Li原子跃迁频率和超精细分裂的精密测量

本文实现了可用于锂原子频率精密测量的冷原子系统,获得了大数目的原子样品;利用西西弗斯冷却和速度选择相干布居俘获实现了~6Li的冷原子的灰色黏胶冷却,原子的温度被冷却到多普勒冷却极限以下,达到50μK;利用光学频率梳,实验上测量了D1线的跃迁频率和超精细分裂,测量结果和理论计算相接近,可以和目前最精确的测量相比较.这些测量为进一步的轻质量原子频率的精密测量、α常数以及核半径的精确标定打下了基础.     

两原子相干共振能量传递的单次与N次能量提取

两原子间隔一定距离且两原子跃迁频率接近时,两原子之间可发生能量传递.理论研究了供能原子和受能原子两共振原子的能量传递.求解薛定谔方程得出两原子共振能量传递效率.结果表明,供能原子在真空场中的激发态寿命在能量传递效率中起到十分重要的作用.能量传递效率与两原子间距离的负三次幂的正弦值的平方成正比,在一阶近似条件下,与两原子间距离的6次方成反比.以供能原子处于激发态时为初始时刻,能量从初始时刻随时间由供能原子向受能原子传递,对受能原子的单次能量提取的最大值大约在供能原子寿命的2/3时刻;对受能原子的连续N次能量提取的最大值,每次提取时间大约在供能原子寿命的1/2时刻.     

二维缺陷GaAs电子结构和光学性质第一性原理研究

采用基于密度泛函理论的第一性原理方法计算了存在Ga空位缺陷和掺杂B原子的二维GaAs的能带结构、态密度和光学性质.计算结果表明空位缺陷二维GaAs显示出金属特性,B原子的引入使体系变为间接带隙半导体,禁带宽度为0.35 eV.态密度计算发现体系低能带主要由Ga的s态、p态、d态和As的s态、p态构成;高能带主要由Ga和As的s态、p态构成.掺杂B原子与存在空位缺陷的二维GaAs相比,静态介电常数相对较低,变为8.42,且易于吸收紫外光,在3.90～8.63 eV能量范围具有金属反射特性,反射率达到52%.     

The S-FFT calculation of Collins formula and its application in digital holography

We study analytically and numerically the properties of one-dimensional chain of cold ions placed in a periodic potential of optical lattice and global harmonic potential of a trap. In close similarity with the Frenkel-Kontorova model, a transition from sliding to pinned phase takes place with the increase of the optical lattice potential for the density of ions incommensurate with the lattice period. We show that at zero temperature the quantum fluctuations lead to a quantum phase transition and melting of pinned instanton glass phase at large values of dimensional Planck constant. After melting the ion chain can slide in an optical lattice. The obtained results are also relevant for a Wigner crystal placed in a periodic potential.     

Superexchange-mediated magnetization dynamics with ultracold alkaline-earth atoms in an optical lattice

Superexchange and inter-orbital spin-exchange interactions are key ingredients for understanding(orbital) quantum magnetism in strongly correlated systems and have been realized in ultracold atomic gases.Here we study the spin dynamics of ultracold alkaline-earth atoms in an optical lattice when the two exchange interactions coexist.In the superexchange interaction dominating regime,we find that the time-resolved spin imbalance shows a remarkable modulated oscillation,which can be attributed to the interplay between local and nonlocal quantum mechanical exchange mechanisms.Moreover,the filling of the long-lived excited atoms affects the collapse and revival of the magnetization dynamics.These observations can be realized in state-dependent optical lattices combined with the state-of-the-art advances in optical lattice clock spectroscopy.     

具有部分本征GaN帽层新型AlGaN/GaN高电子迁移率晶体管特性分析

为了优化传统Al GaN/GaN高电子迁移率晶体管(high electron mobility transistors,HEMTs)器件的表面电场,提高击穿电压,本文提出了一种具有部分本征GaN帽层的新型Al GaN/GaN HEMTs器件结构.新型结构通过在Al GaN势垒层顶部、栅电极到漏电极的漂移区之间引入部分本征GaN帽层,由于本征GaN帽层和Al GaN势垒层界面处的极化效应,降低了沟道二维电子气(two dimensional electron gas,2DEG)的浓度,形成了栅边缘低浓度2DEG区域,使得沟道2DEG浓度分区,由均匀分布变为阶梯分布.通过调制沟道2DEG的浓度分布,从而调制了Al GaN/GaN HEMTs器件的表面电场.利用电场调制效应,产生了新的电场峰,且有效降低了栅边缘的高峰电场,Al GaN/GaN HEMTs器件的表面电场分布更加均匀.利用ISE-TCAD软件仿真分析得出:通过设计一定厚度和长度的本征GaN帽层,Al GaN/GaN HEMTs器件的击穿电压从传统结构的427 V提高到新型结构的960 V.由于沟道2DEG浓度减小,沟道电阻增加,使得新型Al GaN/GaN HEMTs器件的最大输出电流减小了9.2%,截止频率几乎保持不变,而最大振荡频率提高了12%.