Surface plasmon tunneling through a touching gold nanocylinder array on a thin gold film

The optical property of a structure composed of a touching gold nanocylinder array on a thin gold film is investigated using finite-difference time-domain (FDTD) method. It is discovered that the transmission behavior can be tuned by tuning the geometry of the structure. As the film thickness increases, the transmission mode associated with the localized surface plasmon resonance blue shifts accompanied with a decrease of magnitude and full width at half maximum, and a second transmission appear due to the interaction of the plasmons on the cylinder with their images induced on the film. The localized waveguide resonance diminishes but the second resonance peak is intensified and broadened noticeably with the separation of the cylinder array and film increase. The cylinder radius size influences the localized surface plasmon resonance mode obviously. These results may be helpful for the design of a novel optical device.     

Metrological orientation-confirmation of Si(h h k) using scanning tunneling microscopy

For the periodicity-modulation of the Si(h h k) template between (0 0 1) and (1 1 1), it is necessary to prepare the surface with any orientation within this range, most especially for fabricating useful one-dimensional nanostructures. Especially, when there are no strong X-ray signals using the standard Cu K-α source in the vicinity of any arbitrarily chosen (H H K), it turns out that the line-profile analysis on the topographic image of scanning tunneling microscopy can be a unique way for confirming the orientation of the prepared surface. Though there are a number of small-width facets on the reconstructed surface, if any of well-defined facets, such as (1 1 1), (3 3 7), (1 1 2), and (3 3 5), are included in these facets it is possible to determine the orientation using the weighted-average method.     

Nano-crater formation on a Si(1 1 1)-(7 × 7) surface by slow highly charged ion-impact

Using scanning tunneling microscopy (STM) and time of flight secondary ion mass spectrometry (TOF/SIMS), we observed radiation effects on a Si(1 1 1)-(7 × 7) surface in the collision of a single highly charged ion (HCI) with a charge state q up to q = 50. The STM observation with atomic resolution revealed that a nanometer sized crater-like structure was created by a single HCI impact, where the size increased rapidly with q. The secondary ion yields also increased with q in which multiply charged Si ions (Siⁿ⁺) were clearly observed in higher q HCI-collisions. The sputtering mechanism is briefly discussed, based on the so-called Coulomb explosion model.     

Discrete dihedral-angle modulation in porphyrin wheels adsorbed on Cu(1 0 0) observed by scanning tunneling microscopy

Conformations of two dodecameric porphyrin wheels adsorbed on a Cu(1 0 0) were probed by using scanning tunneling microscopy (STM). Whereas a wheel consisting of six meso-meso linked diporphyrins was detected as uniform ring structure, several different images with three discrete molecular heights were detected for a wheel consisting of six meso-meso, β-β,β-β triply-linked planar diporphyrins. These results indicate that the former has a conformation similar to that in a free space, while the latter has various conformations with respect to orientation of planar diporphyrin units toward the metal surface. Several discrete STM images of the latter have been interpreted in terms of possible eight conformations, which vary as to relative orientation of neighboring diporphyrin units.     

Study of Si(0 0 1)4 × 2-Ga structure by scanning tunneling microscopy and ab initio calculation

We have studied Si(0 0 1)-Ga surface structures formed at Ga coverages of slightly above 0.50 monolayer (ML) at 250 °C by scanning tunneling microscopy (STM). 4 × 2-, 5 × 2-, and 6 × 2-Ga structures were observed in a local area on the surface. The 4 × 2-Ga structure consists of three protrusions, as observed in filled- and empty-state STM images. The characters of these structures are clearly different from those of other Si(0 0 1)-Ga structures. We also performed an ab initio calculation of the energetics for several possible models for the 4 × 2-Ga structure, and clarified that the three-orthogonal-Ga-dimer model is the most stable. Also, the results of comparing the simulated STM images and observation images at various bias voltages indicate that this structural model is the most favorable.     

亚波长电磁波隧穿

文章介绍一种具有亚波长隧穿特性的电磁波人工复合材料.这种材料由具有不同特性的层状材料组成一“三明治”多层复合体：即ABA板.其中夹心板B为一完全阻挡电磁波的金属网 (具有负介电常数-ε的金属亚波长网格),而两夹板A可以由具有周期排列的正介电常数(+ε)或负磁导率(-μ）的单元体构成.当电磁波入射此“三明治”体时,特定频率的电磁波会透过而产生透带.这种具有亚波长隧穿的现象实际上是由夹板上单元体的局域谐振诱导各层间电磁场增强引起的.     

X-ray reflectivity study on gold films during sputter deposition

We performed in-situ X-ray reflectivity measurements of gold films during sputter deposition on polished silicon substrates. The measurements were performed at several substrate temperatures and under two argon pressures. The gold surfaces were also examined by scanning tunneling microscopy after deposition to obtain their real-space topographic images. These images were used to complement the X-ray reflectivity measurements in determining the effect of argon pressure on the gold surface and its height-height difference functions. An approximation for height-height difference functions was employed to analyze the X-ray reflectivity data. The measured interface width during growth followed a simple power law, consistent with recent theoretical results of dynamic scaling behavior. The scaling exponents, however, do not agree well with predictions based on some models in 2 + 1 dimensions.     

Surface reconstructions and phase transitions on the GaAs(111)B surface

The (111)B surface of GaAs has been investigated using scanning tunneling microscopy (STM) and a number of different reconstructions have been found at different surface stoichiometries. In accordance with electron diffraction studies, we find the series (2 × 2), (1 × 1)_LT, ( ) and (1 × 1)_HT with increasing annealing temperature, corresponding to decreasing surface As concentration. The (1 × 1)_LT is of particular interest, since it only occurs in a narrow temperature window between the two more established reconstructions, the (2 × 2) and the ( ). We find the (1 × 1)_LT to take the form of a mixture of the local structures of both the (2 × 2) and ( ) phases, rather than having a distinct structure. This is behaviour consistent with a kinetically limited system, dominated by the supply of As adatoms to the surface, and may be an example of a continuous phase transition. Above the (1 × 1)_LT transition, atomic resolution images of the ( ) surface reveal only a three-fold symmetry of the hexagonal structural units, brought about by inequivalent surface bonding due to the 23.4° rotation of the surface unit cell relative to the substrate. This is responsible for the disorder found in the ( ) reconstruction, since the structure may form in one of two domains. At lower surface As concentration, the (1 × 1)_HT surface adopts a structure combining small domains of a 19.1° structure and random disorder. There is no apparent similarity between the (1 × 1)_LT and (1 × 1)_HT structures, which may be due to our measurements being conducted at room temperature and without an As flux to control the surface As concentration.     

Growth mode and novel structure of ultra-thin KCl layers on the Si(1 0 0)-2 × 1 surface

This study investigates ultra-thin potassium chloride (KCl) films on the Si(1 0 0)-2 × 1 surfaces at near room temperature. The atomic structure and growth mode of this ionic solid film on the covalent bonded semiconductor surface is examined by synchrotron radiation core level photoemission, scanning tunneling microscopy and ab initio calculations. The Si 2p, K 3p and Cl 2p core level spectra together indicate that adsorbed KCl molecules at submonolayer coverage partially dissociate and that KCl overlayers above one monolayer (ML) have similar features in the valance band density of states as those of the bulk KCl crystal. STM results reveal a novel c(4 × 4) structure at 1 ML coverage. Ab initio calculations show that a model that comprises a periodic pyramidal geometry is consistent with experimental results.     

Irreversible structural transformation of Si(1 1 4)-2 × 1 induced by subsurface carbon

Using scanning tunneling microscopy (STM), it has been found that the reconstruction of Si(1 1 4) is transformed irreversibly from a 2 × 1 structure composed of dimer (D), rebonded atom (R), and tetramer (T) rows (phase A) to a different kind of 2 × 1 structure composed of D, T, and T rows (phase B) by C incorporation. It has been confirmed by high-resolution synchrotron core-level photoemission spectroscopy (PES) that such an irreversible structural transformation is due to stable subsurface C atoms. They induce anisotropic compressive stress on the surface, which results in insertion of Si dimers to an R row to form a T row.