Effect of uniaxial stress on the dielectric properties of BaTiO3+0.1wt.%Eu2O3 ceramics

ABSTRACT

BaTiO₃+0.1wt.%Eu₂O₃ ceramics were prepared by a solid-state reaction method. The dielectric behavior of these ceramics as a function of uniaxial pressure has been systematically studied. The external stress showed obvious effects on these properties. An increase of the Curie point (T_c) and decrease of the Curie–Weiss temperature (T₀) was observed with increasing pressure, resulting in an increase in the first-order nature of the phase transformation (T_c–T₀ increases). Broadening and flattening of the permittivity versus temperature curves near their maximum was found. The pressure behavior of thermal hysteresis and the ??/?T vs. T plot suggests that the phase transition changes to second-order type with increasing pressure. Furthermore, the Curie–Weiss constant obtained from a modified Curie–Weiss law strongly decreases with increasing pressure, suggesting that the mechanism of phase transition is going to order–disorder type.     

Effective dielectric constant model of electromagnetic backscattering from stratified air–sea surface film–sea water medium

Studies of surface film medium on the sea surface are carried out in this paper for developing the technology to automatically detect and classify sea surface films, and an effective dielectric constant model of electromagnetic backscattering from a stratified air–ocean interface. Numerical results of the new model show the characteristics of effective dielectric constants for the air–sea surface film–sea water medium as follows. The effective dielectric constants decrease with increasing relative dielectric constants of the sea surface films. The effective dielectric constants decrease in horizontal polarization(abbr. HH polarization) and increase in VV vertical polarization(abbr. VV polarization) with increasing radar incident angle. Effective dielectric constants vary with relative sea surface film thickness as a cosinusoidal function of sea surface film thickness. Effective dielectric constant of VV polarization is larger than that of HH polarization. Two potential applications are found with our model, i.e., the retrieval of dielectric constants from the sea surface film, and the film thickness retrieval with our model. Our model has a highly significant influence on improving the technology related to the remote sensing of sea surface films.     

Structural and dielectric properties of Pb5(Ge,Si)O11

The ferroelectric lead germanate (Pb₅Ge₃O₁₁) and its isomorphous compounds are important because of their uses as pyroelectric and electro-optic devices. Comparison of inter-planar d-spacings of Pb₅Ge_3−x Si _x O₁₁ (x=0, 0.3, 0.7 and 1.00) suggests that there is no change in basic structure of Pb₅Ge_3−x Si _x O₁₁ when Si is substituted for Ge in small quantity (x<1). The dielectric properties of the Si-substituted compounds have been studied as a function of temperature (30 to 200°C). The ferroelectric-paraelectric phase transition has been observed at 185°C. The Si doping causes (a) Curie point to shift towards low temperature, (b) peak value of the dielectric constant to decrease and (c) phase transition diffuse. The fast increase in dielectric constant of pure Pb₅Ge₃O₁₁ with temperature (beyond transition temperature) may be attributed to the development of space charge polarization in the system.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

High-mobility germanium p-MOSFETs by using HCl and(NH_4)_2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples.     

Dielectric spectroscopy studies of ZnO single crystal

Dielectric relaxation and charge transport induced by electron hopping in ZnO single crystal are measured by using a novocontrol broadband dielectric spectrometer. Typical Debye-like dielectric relaxation originating from electronic hopping between electronic traps and conductive band in surface Schottky barrier region is observed for ZnO single crystal-Au electrode system. However, after insulation of ZnO single crystal by heat treatment in rich oxygen atmosphere, dielectric relaxation and alternating current conductance are observed simultaneously in the dielectric spectra, implying that dielectric relaxation and charge transport can be induced simultaneously by electronic hopping at high temperature in an ordered system. The intrinsic correlation between local dielectric relaxation and long range charge transport offers us a new method to explore complicated dielectrics.     

Effects of charge and dipole on flatband voltage in an MOS device with a Gd-doped HfO_2 dielectric

Gd-doped HfO2 has drawn worldwide interest for its interesting features.It is considered to be a suitable material for N-type metal-oxide-semiconductor(MOS)devices due to a negative flatband voltage(Vfb)shift caused by the Gd doping.In this work,an anomalous positive shift was observed when Gd was doped into HfO2.The cause for such a phenomenon was systematically investigated by distinguishing the effects of different factors,such as Fermi level pinning(FLP),a dipole at the dielectric/SiO2interface,fixed interfacial charge,and bulk charge,on Vfb.It was found that the FLP and interfacial dipole could make Vfbnegatively shifted,which is in agreement with the conventional dipole theory.The increase in interfacial fixed charge resulting from Gd doping plays a major role in positive Vfbshift.     

On generation of electromagnetic waves in the terahertz frequency range in a multilayered open dielectric waveguide

We show that it is possible to produce terahertz wave generation in an open waveguide, which includes a multilayer dielectric plate. The plate consists of two dielectric layers with a corrugated interface. Electrons, drifting in the potential well, interact with the non-uniform electric field which is induced near the dielectric interface by the natural wave of the waveguide. The corrugated period and parameters of the electronic system are chosen in order to ensure the most effective interaction of electrons with a wave. Generation of electromagnetic waves is achieved by converting the electrons? energy into the electromagnetic wave energy.     

Dielectric loss of half-doped manganite Lao.sCao.sMnO3＊

The dielectric loss tanfi of half-doped manganite Lao.sCao.sMnO3 is investigated using Green＇s function technique. The Lao.sCao.sMnO3 is described by the Kondo-lattice model in the double exchange limit, taking into account the Jahn- Teller distortion and the super-exchange interaction between the localized electrons. It is found that the intensity of tans decreases with increasing [e]TI, V, and U. It is also observed that the transition temperature Tp rises as l eJTI and U increase. It is worth noting that Tp remains unchanged and the strength of tans increases with increasing g. The calculated dielectric loss results are explained theoretically, and these behaviors are in qualitative agreement with the experimental results.