矩阵特征值的一类新的包含域

用盖尔圆盘定理来估计矩阵的特征值是一个经典的方法,这种方法仅利用矩阵的元素来确定特征值的分布区域.本文利用相似矩阵有相同的特征值这一理论,得到了矩阵特征值的一类新的包含域,它们与盖尔圆盘等方法结合起来能提高估计的精确度.     

强光场中原子的电离速率

以静态场隧道电离为基础,在准静态近似的条件下,对描述强光场中原子及其各阶离子电离的电离速率进行了较为系统的总结,纠正了早期对隧道电离的电离速率公式进行讨论并且后来的计算中被广泛引用的文献「１０」中公式的错误,地部分稀有气体原子及其各了子在线偏振、圆偏振强光场中的了速度及相应的阈值光强进行了比较。     

What happens during vocal warm-up?

Most singers prefer to warm up their voices before performing. Although the subjective effect is often considerable, the underlying physiological effects are largely unknown. Because warm-up tends to increase blood flow in muscles, it seems likely that vocal warm-up might induce decreased viscosity in the vocal folds. According to the theory of vocal-fold vibration, such a decrease should lead to a lower phonation threshold pressure. In this investigation the effect of vocal warm-up on the phonation threshold pressure was examined in a group of male and female singers. The effect varied considerably between subjects, presumably because the vocal-fold viscosity was not a dominating factor for the phonation-threshold pressure.     

THEORY AND COMPUTATION OF SECONDARY BIFURCATIONS NEAR A DOUBLE EIGENVALUE

This paper deals with secondary bifurcations near a double eigenvalue of a nonlinear equation with two parameters. Utilizing symmetries (or more generally, equivariances ) and introducing two new parameters, we give some extended systems so that the double singular points, secondary bifurcation points and initial secondary branches respectively become their regular solutions. The methods in this paper not only give more general conditions of secondary bifurcation but also avoid the adjacent singularities of existing extended systems for computing the simple bifurcation points on non-trivial solution branches A numerical example is presented, showing the effectiveness of our methods.     

Computation of the quasi-stationary distributions inM(n)/GI/1/K andGI/M(n)/1/K queues

In this paper, we provide numerical means to compute the quasi-stationary (QS) distributions inM/GI/1/K queues with state-dependent arrivals andGI/M/1/K queues with state-dependent services. These queues are described as finite quasi-birth-death processes by approximating the general distributions in terms of phase-type distributions. Then, we reduce the problem of obtaining the QS distribution to determining the Perron-Frobenius eigenvalue of some Hessenberg matrix. Based on these arguments, we develop a numerical algorithm to compute the QS distributions. The doubly-limiting conditional distribution is also obtained by following this approach. Since the results obtained are free of phase-type representations, they are applicable for general distributions. Finally, numerical examples are given to demonstrate the power of our method.     

对晶体光损伤阈值测量的一种新方法的研究

提出一种测量晶体光损伤阈值的新方法,即确定激光横向功率密度的空间分布,利用晶体的激光损伤斑点半径,直接计算出晶体光损伤阈值,并给出入射激光为高斯光束时晶体损伤阈值与其损斑半径的关系。以提拉法生长的掺镁铌酸锂(MgO：LiNbO3)晶体为研究对象,用该方法测量其损伤阈值,得到了定量结果且所得数据与文献已报道的规律相符。分析得出同样激光条件下．损斑半径越大的晶体其光损伤阈值越小的结论,指出该方法同样适用于其他晶体或非高斯光束条件下光损伤阈值的测量并对具体作法进行了讨论。该测量方法弥补了常用测量方法只能定性或半定量的不足,可用于晶体抗光损伤阈值的精确测量。     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps，波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法，实验测量了激发空气电离所需的阈值激光强度.结果表明，当激光脉冲宽度从50fs增加到22ps时，阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²；I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p     

Characteristics of pentacene organic thin film transistor with top gate and bottom contact

High performance pentacene organic thin film transistors (OTFT) were designed and fabricated using SiO₂ deposited by electron beam evaporation as gate dielectric material. Pentacene thin films were prepared on glass substrate with S--D electrode pattern made from ITO by means of thermal evaporation through self-organized process. The threshold voltage V_TH was --2.75± 0.1V in 0---50V range, and that subthreshold slopes were 0.42± 0.05V/dec. The field-effect mobility (μ_EF) of OTFT device increased with the increase of V_DS, but the μ_EF of OTFT device increased and then decreased with increased V_GS when V_DS was kept constant. When V_DS was --50V, on/off current ratio was 0.48× 10⁵ and subthreshold slope was 0.44V/dec. The μ_EF was 1.10cm²/(V.s), threshold voltage was --2.71V for the OTFT device.     

Effect of polyvinylpyrrolidone on the structure and laser damage resistance of sol–gel silica anti-reflective films

The effect of polyvinylpyrrolidone (PVP) on the structure and laser-induced damage threshold (LIDT) of sol–gel silica anti-reflective films is investigated. The results of dynamic light scattering, transmission electron microscopy, and small angle X-ray scattering, show that the PVP molecules surrounded the silica sol particles through the strong hydrogen bonds between Si-OH groups and the PVP. As a result, the growth of silica particles was restricted and thus the interface layer between the silica particles and the solvent become thickened with PVP content. Furthermore, the PVP reduced the porosity of the film, so the anti-reflection properties of the film were weakened. A multi-fractal analysis showed that the appropriate addition of PVP, 1 weight percent (wt%), could improve the surface fractal structure of the film, but that higher PVP content resulted in reduced surface uniformity. The addition of PVP lead to improved LIDT.     

Epidemic spreading in complex networks

The study of epidemic spreading in complex networks is currently a hot topic and a large body of results have been achieved. In this paper, we briefly review our contributions to this field, which includes the underlying mechanism of rumor propagation, the epidemic spreading in community networks, the influence of varying topology, and the influence of mobility of agents. Also, some future directions are pointed out.