Vernier阳极设计与成像模拟

光子计数成像探测器作为探测微弱光的重要手段,由微通道板,解码阳极以及后续的读出电路组成,其中解码阳极的性能直接影响着探测器的成像质量。作为一种电荷分割型阳极,Vernier阳极利用周期性的正弦电极区域替代了楔条形阳极(WSA)的线性电极,可获得高的成像分辨率和大的电极活动区域。根据Vernier阳极的设计原理对Vernier阳极进行了仿真和设计,首先,介绍了矢量形式的阳极解码,确定了阳极设计参量为阳极周期长度,电极振幅及电极波长;其次,分析了各阳极设计参量对探测器成像的影响,利用Labview软件分别模拟了电子云,Vernier阳极板以及其相互作用成像情况,确定了Vernier阳极周期长度与粗调波长之间的关系以及设计参数一定时,成像达到最佳的电子云大小,依照模拟结果和实际的加工条件,设计和制备了周期为891 μm,绝缘沟道为25 μm,振幅为50 μm,粗调数为5的九路Vernier阳极。     

滑动盖板对一维微尺度光栅红外辐射特性影响

电磁波入射到微尺度周期性结构表面时,一定条件下将在某一波段产生异常光吸收现象。基于该特性,本文提出了单边移动盖板光栅和双边移动盖板光栅两种光栅结构,并使用严格耦合波分析(RCWA)方法对TM波垂直入射的一维微尺度光栅表面辐射特性进行了分析,研究了滑动盖板的厚度和位置对光栅表面结构辐射特性的影响。结果表明,相同盖板厚度,双边移动盖板光栅形成的发射率峰较单边移动盖板光栅形成的发射率峰具有较宽的半高全宽(FWHM),但峰值较低;随盖板向关闭侧移动,高发射率峰对应波长向长波方向移动;随盖板厚度增加,发射率峰向长波方向移动,其中双边移动盖板光栅结构形成的发射率峰变宽,峰值变小。     

A k·p analytical model for valence band of biaxial strained Ge on（001） Si_1-xGe_x

In this paper,the dispersion relationship is derived by using the k·p method with the help of the perturbation theory,and we obtain the analytical expression in connection with the deformation potential.The calculation of the valence band of the biaxial strained Ge/(001)Si1-xGex is then performed.The results show that the first valence band edge moves up as Ge fraction x decreases,while the second valence band edge moves down.The band structures in the strained Ge/(001)Si 0.4 Ge 0.6 exhibit significant changes with x decreasing in the relaxed Ge along the [0,0,k] and the [k,0,0] directions.Furthermore,we employ a pseudo-potential total energy package(CASTEP) approach to calculate the band structure with the Ge fraction ranging from x = 0.6 to 1.Our analytical results of the splitting energy accord with the CASTEP-extracted results.The quantitative results obtained in this work can provide some theoretical references to the understanding of the strained Ge materials and the conduction channel design related to stress and orientation in the strained Ge pMOSFET.     

Enhancement of phononic band gaps in ternary/binary structure

Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.     

二硫化钨/石墨烯异质结的界面相互作用及其肖特基调控的理论研究

采用第一性原理方法研究了二硫化钨/石墨烯异质结的界面结合作用以及电子性质,结果表明在二硫化钨/石墨烯异质结中,其界面相互作用是微弱的范德瓦耳斯力.能带计算结果显示异质结中二硫化钨和石墨烯各自的电子性质得到了保留,同时,由于石墨烯的结合作用,二硫化钨呈现出n型半导体.通过改变界面的层间距可以调控二硫化钼/石墨烯异质结的肖特基势垒类型,层间距增大,肖特基将从p型转变为n型接触.三维电荷密度差分图表明,负电荷聚集在二硫化钨附近,正电荷聚集在石墨烯附近,从而在界面处形成内建电场.肖特基势垒变化与界面电荷流动密切相关,平面平均电荷密度差分图显示,随着层间距逐渐增大,界面电荷转移越来越弱,且空间电荷聚集区位置向石墨烯层方向靠近,导致费米能级向上平移,证实了肖特基势垒随着层间距的增加由p型接触向n型转变.本文的研究结果将为二维范德瓦耳斯场效应管的设计与制作提供指导.     

Structural and optical properties of cadmium magnesium zinc oxide (CdMgZnO) nanoparticles synthesized by sol–gel method

Nanoparticles of ${\mathrm{Cd}}_x{\mathrm{Mg}}_{0.12?x}{\mathrm{Zn}}_{0.88}\mathrm{O}$ $(0\le x\le 0.02)$ were synthesized by a simple sol gel route with the combination of chelating agents. Effect of cadmium on the phase, structural, morphological and optical properties of the synthesized nanoparticles has been studied and reported by using X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), energy dispersive X-ray (EDX), Fourier transform infrared spectroscopy (FTIR) and UV–Vis diffuse reflectance spectroscopy (UV–vis DRS). The crystal size, lattice parameters, unit cell volume, X-ray density, inter-planar distances and bond length were obtained and analyzed from the XRD data. The X-ray analysis reveals the formation of a single phase with a hexagonal wurtzite structure, where an increase of the cell volume was achieved as the Cd content was increased as well. Synthesized nanoparticle were nearly spherical at nano-size regime and are loosely agglomerated as observed from the SEM analysis. EDX spectra of the composition confirmed the appropriate stoichiometric ratio. A fundamental absorption peak centered at 375 nm was observed from the UV–visible absorption spectra which shifted towards a higher wavelength correlating the narrowing of the energy band gap due to increase in Cd content. The structural adjustment from the IR spectra confirmed the stretching vibration of Zn–O in the ${\mathrm{Cd}}_x{\mathrm{Mg}}_{0.12?x}{\mathrm{Zn}}_{0.88}\mathrm{O}$ lattice with Cd content.     

AlGaN插入层对InAlN/AlGaN/GaN异质结散射机制的影响

InAlN/AlN/GaN异质结中,名义上的AlN插入层实为Ga含量很高的AlGaN层, Al, Ga摩尔百分比决定了电子波函数与隧穿几率,因此影响与InAlN/AlGaN势垒层有关的散射机制.本文通过求解薛定谔-泊松方程与输运方程,研究了AlGaN层Al摩尔百分含量对InAlN组分不均匀导致的子带能级波动散射、导带波动散射以及合金无序散射三种散射机制的影响.结果显示:当Al含量由0增大到1,子带能级波动散射强度与合金无序散射强度先增大后减小,导带波动散射强度单调减小;在Al含量为0.1附近的小组分范围内,合金无序散射是限制迁移率的主要散射机制,该组分范围之外,子带能级波动散射是限制迁移率的主要散射机制;当Al摩尔百分含量超过0.52,三种散射机制共同限制的迁移率超过无插入层结构的迁移率, AlGaN层显示出对迁移率的提升作用.     

“全同”超形变核转动带的量子群Uqp(u2)模型的理论分析

利用量子群U_qp(u₂)模型计算了^{191-192-193-194Hg}超形变(SD)带的γ跃迁能E_γ,运动学转动惯量J⁽¹⁾和动力学转动惯量J⁽²⁾,顺排角动量之差(i=ω(J⁽¹⁾(^{191-192-193-194}Hg)-J⁽¹⁾(¹⁹²Hg))),并与实验值进行比较得到了满意的结果,此外,还利用U_qp(u₂)模型的形变参量与核软度的关系式,计算出各SD带的核软度参数σ₁与唯象分析给出的组态结构进行了比较分析.     

Electronic structural and magnetic properties of cadmium chalcogenide beryllosilicate sodalites

Density functional self-consistent spin-polarized calculations with the Discrete Variational Method were performed to obtain the electronic structures of cadmium chalcogenide beryllosilicate sodalites Cd₈[BeSiO₄]₆Z₂ and their bulk materials CdZ (Z = S, Se, Te). Similar as their bulk materials, these sodalites are also semiconductors. From their density of states and charge distributions, it was found that there is greater localization of the electron density in the sodalites compared with that of the bulk. The band gaps in their bulk compounds are different from those in the sodalite structures due to the electrons of Si, Be and O filled in. Different from their bulk materials, the d electrons of Cd play an important role to form an unseparated valence band with all orbitals of other elements. The calculated magnetic moments of these three materials are very small since all d atomic orbitals are fully occupied. Received: 28 March 1997 / Revised: 18 July 1997 / Accepted: 9 September 1997