（Ti,Al）N薄膜光学性能的研究

研究了（Ｔｉ，Ａｌ）薄膜的光学特性，对其反射和透射光谱作了仔细分析。运用Ｈａｄｌｅｙ方程，算出一定成分（Ｔｉ，Ａｌ）Ｎ膜的折射率ｎ，消光系数ｋ随波长的变化关系。又根据透射曲线，计算出了（Ｔｉ，Ａｌ）Ｎ膜的光隙能。     

固体介质间隔层激光标准具性能的影响因素研究

针对固体介质间隔层的镀膜标准具, 以1 064 nm激光镀膜标准具为例, 首先研究了反射膜堆数对反射带宽、基底厚度以及对自由光谱区的影响:标准具的带宽随着膜层堆数增加而减小, 自由光谱区随着基板厚度的增加而减小;其次研究了基底误差对标准具中心波长定位和透过率的影响, 通过定量数值计算证明了基底误差可通过标准具的使用角度补偿;针对典型的H(LH)^m/Substrate/(HL)^mH和L(LH)^m/Substrate/(HL)^mL两个膜系结构, 研究了入射激光发散角对标准具中心波长偏移、通带半宽度、中心波长透过率和最大透过率的影响。随着激光发散角的增加, 中心波长向短波方向移动, 通带半宽度、中心波长透过率和最大透过率呈现下降的趋势, 并且第二个膜系结构的标准具性能优于第一个膜系结构的标准具。     

Dynamics of charge transfer at Au/Si metal-semiconductor nano-interface

An ab initio analysis of the periodic array of Au/Si nanostructure composed of gold clusters linked to silicon quantum dot (QD) co-doped by aluminium and phosphorus along [111] direction is presented in this paper. The density functional theory (DFT) is used to compute the electronic structure of the simulated system. Non-adiabatic coupling implemented in the form of dissipative equation of motion for reduced density matrix is used to study the phonon-induced relaxation in the simulated system. The density of states clearly shows that the formation of Au–Si bonds contributes states to the band gap of the model. Dynamics of selected photo-excitations shows that hole relaxation in energy and in space is much faster than electron relaxation, which is due to the higher density of states of the valence band.     

Laser‐Induced Self‐Assembled Nanostructures on Electron‐Transparent Substrates

Currently, one of the challenges in high‐resolution transmission electron microscopy (TEM) studies of nanomaterials is to make contamination‐free materials in a simple and time‐efficient way. Here, a method is demonstrated that combines nanosecond‐pulsed laser dewetting of thin films with a film float‐off technique to realize nanostructures (NSs) on electron‐transparent substrates in a robust and rapid manner. NSs of metal (Ag) and bimetals (AgCo, AuCo) ranging from 20 to 150 nm are synthesized on thin carbon film deposited on mica substrates. The NS/carbon system is subsequently transferred onto TEM grids by a float‐off process resulting from debonding of the carbon from mica due to their contrasting hydrophobic nature. This process enables the fabrication of different NSs on flexible and electron‐transparent substrates.     

金刚石对顶砧原位电导率测量系统

 在金刚石对顶砧中进行原位高温高压电阻测量时,由于受到绝热层的限制,从而达不到理想的温度条件。采用普通的粉末绝热材料,会给电极的引入造成很大困难,而且不规则的电阻丝使电阻测量很难精确量化。利用溅射镀膜方法,在对顶砧的砧面上镀氧化铝膜作绝热层,溅射的金属钼膜作电极材料,成功地完成了高温高压条件下原位电阻的测量。利用此装置,测量了铁镁硅酸盐(Mg_0.875,Fe_0.125)₂SiO₄在高温高压环境下（31~35 GPa,1 500~3 400 K）的电导率,得到了样品的导电粒子激活能,发现其激活能随着压强的升高而增大,与低压低温（小于15 GPa,低于1 200 K）条件相比,其激活体积和激活能都明显减小。     

Enhancement of photosensitivity in bismuth doped Cu2ZnSnS4 thin films

In this paper, the effect of bismuth doping on the structural, morphological, optical and electrical properties of Cu₂ZnSnS₄ (CZTS) films has been investigated. The undoped and bismuth doped CZTS films (0, 0.5, 1, 1.5 and 2 mol%) were deposited on glass substrates by solution based method. The XRD result shows a significant improvement in the crystallinity of the films with increase in bismuth concentration. The Raman spectra of the films show the dominant peak at 334 cm^–1 corresponding to A₁ vibrational mode of CZTS kesterite phase. The FESEM micrographs of the films show an enhancement in the grain size and densification with the addition of bismuth ion concentration. The optical bandgap of the films was found to vary (1.59–1.40 eV) with the doping of bismuth ions. The I –V characteristics indicate twofold increment in the photoconductivity for the bismuth doped CZTS films under 100 mW/cm² illumination suggesting their potential application in photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

等厚薄板翼型的气动力特性研究

本文从吹风实验及数据分析两方面来研究等厚薄板翼型的气动力特性。在实验中对单园弧、双圆弧、抛物线三种类型的薄板翼型进行了孤立翼型的吹风试验，得出了各翼型升力系数，阻力系数随冲角变化的结果。然后利用非交错网格下的ＳＩＭＰＬＥ方法，计算了等厚薄板翼型流场，计算结果和实验结果吻合较好。     

金属UV光敏薄膜的实验研究

介绍了金属Au和Al薄膜的制备方法，研究了其UV光电发射特性，并做了寿命实验。给出了在真空中以及放在大气中光电发射衰减的情况。指出了其在大气中达到一个稳定值之后，再反复多次暴露于干燥大气时仍存在一个稳定光电发射周期的特点，可长达数月。金属薄膜有一个最佳膜层厚度，这与光电发射逸出深度、膜层结构等密切相关。近年来光电子成像器件发展非常迅速，急需光电发射均匀的面电子源，因此在微通道板的特性测试和像管的动态模拟中，Au和Al金属薄膜成为被优选的对象。     

Wafer thickness optimization for silicon solar cells of heterogeneous material quality

In this Letter, we introduce a method of calculating the optimal wafer thickness for silicon solar cells with multicrystalline bulk material. The optimal thickness depends on the relation of bulk recombination to surface recombination and the light trapping. For multicrystalline silicon bulk recombination strongly varies laterally and with injection level, which complicates the calculations. A thickness optimization using the “Efficiency Limiting Bulk Recombination Analysis” (ELBA) takes all these effects correctly into account. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

电子束、离子辅助和离子束溅射三种工艺对光学薄膜性能的影响

运用电子束、离子辅助和离子束溅射三种镀膜工艺分别制备光学薄膜,包括单层氧化物薄膜和增透膜,然后采取一系列测试手段,如Zygo轮廓仪、原子力显微镜、表面热透镜技术和X射线衍射等技术,来分析和研究不同的工艺对这些薄膜性能的不同影响,以判断合理的沉积工艺。