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101.
光学光刻是目前超大规模集成电路(VLSI)制备中主要的微米和亚微米的图形加工技术,这一技术将继续保持其主导地位成为90年代VLSI发展的关键。本文综述了近年来光学光刻工艺的发展,主要介绍了G线(436nm)、Ⅰ线(365nm)和准分子激光光刻的现状,并对实现高的光学光刻分辨率所必须解决的透镜设计、套准精度和像场面积等问题作了详细描述。最后展望了发展方向、 相似文献
102.
103.
Christian Erich Zybill Mahmoud Abdel-Hafiez Sami Allam Tharwat El Sherbini 《Progress in Solid State Chemistry》2007,35(2-4):469-480
Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch2. Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular. 相似文献
104.
G. Teowee J. M. Boulton C. D. Baertlein R. K. Wade D. R. Uhlmann 《Journal of Sol-Gel Science and Technology》1994,2(1-3):623-626
A series of monolithic Pt-PZT-Pt capacitors was prepared based on sol-gel derived PZT 53/47 films fired to 700 C. After deposition of top Pt electrodes, the capacitors were subjected to post-metallization annealing (PMA) temperatures of 100 C to 700 C. Dielectric and ferroelectric (FE) characterizations were performed. Increasing the PMA temperature produced lower values of spontaneous and remanent polarizations, dielectric constant and leakage currents. The observations are correlated with a proposed FE capacitor model. 相似文献
105.
X.T Zhang Y.C LiuZ.Z Zhi J.Y ZhangY.M Lu D.Z ShenW Xu X.W FanX.G Kong 《Journal of luminescence》2002,99(2):149-154
The properties of the excitonic luminescence for nanocrystalline ZnO thin films are investigated by using the dependence of excitonic photoluminescence (PL) spectra on temperature. The ZnO thin films are prepared by thermal oxidation of ZnS films prepared by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The X-ray diffraction (XRD) indicates that ZnO thin films have a polycrystalline hexagonal wurtzite structure with a preferred (0 0 2) orientation. A strong ultraviolet (UV) emission peak at 3.26 eV is observed, while the deep-level emission band is barely observable at room temperature. The strength of the exciton-longitudinal-optical (LO) phonon coupling is deduced from the temperature dependence of the full-width at half-maximum (FWHM) of the fundamental excitonic peak, decrease in exciton-longitudinal-optical (LO) phonon coupling strength is due to the quantum confinement effect. 相似文献
106.
107.
反应离子镀光学薄膜的微观结构分析 总被引:2,自引:1,他引:1
用反应离子镀方法制备了TiO2单层膜及TiO2/SiO2多层膜,用透射电子显微镜分别观察了由反应离子镀方法及传统蒸镀法二种不同工艺制得的TiO2单层膜及TiO2/SiO2多层膜的断面结构,并对TiO2单层膜进行了喇曼分析和卢瑟福背散射分析。 相似文献
108.
The sum of the largest eigenvalues of a symmetric matrix is a nonsmooth convex function of the matrix elements. Max characterizations for this sum are established, giving a concise characterization of the subdifferential in terms of a dual matrix. This leads to a very useful characterization of the generalized gradient of the following convex composite function: the sum of the largest eigenvalues of a smooth symmetric matrix-valued function of a set of real parameters. The dual matrix provides the information required to either verify first-order optimality conditions at a point or to generate a descent direction for the eigenvalue sum from that point, splitting a multiple eigenvalue if necessary. Connections with the classical literature on sums of eigenvalues and eigenvalue perturbation theory are discussed. Sums of the largest eigenvalues in the absolute value sense are also addressed.This paper is dedicated to Phil Wolfe on the occasion of his 65th birthday.The work of this author was supported by the National Science Foundation under grants CCR-8802408 and CCR-9101640.The work of this author was supported in part during a visit to Argonne National Laboratory by the Applied Mathematical Sciences subprogram of the Office of Energy Research of the U.S. Department of Energy under contract W-31-109-Eng-38, and in part during a visit to the Courant Institute by the U.S. Department of Energy under Contract DEFG0288ER25053. 相似文献
109.
凸集的广义Reuleaux三角形 总被引:1,自引:1,他引:0
常宽凸集的面积最小者为Reulaux三角形,而非常宽凸集的面积最小者为何呢?它就是本文将给出的广义Reuleaux三角形△R。 相似文献
110.
H. Kuramochi J. Okabayashi F. Takano M. Mizuguchi T. Manago H. Akinaga 《Surface science》2004,550(1-3):192-198
Strong magnetic poles at characteristic rectangular defects have been observed using a magnetic force microscope on a MnAs(
1 0 0) thin film with the thickness of 30 nm. The MnAs thin film was epitaxially grown on a GaAs(0 0 1) substrate. The magnetic poles were in one-arranging direction, being independent of the magnetization direction of the film. The poles were pinned at the edges of the rectangular defects until just below the Curie temperature, and formed a stable magnetic-field loop on the MnAs surface. The stability of the magnetic pole pinning shows the distinctive feature of the magnetic domain structure on the surface with a strong anisotropy, which was built in the heterostructure of MnAs and GaAs. 相似文献