X波段新型低阻抗高功率微波源的模拟研究

提出了一种新型低阻抗高功率微波源,能在单个器件内产生两束锁相的相干高功率微波,对两束相干微波进行功率合成有望在单个高功率微波器件中实现更高的功率输出.粒子模拟结果显示,在电压687 k V、磁场0.8 T时,该微波源整体阻抗36?,两束微波的频率都为9.72 GHz,输出功率分别为1.20 GW和2.58 GW,功率效率分别为28%和30%;两束输出微波之间频率抖动小于±3 MHz,相位差抖动小于±3?.     

高功率微波高斯馈源口面场分析

 用波导本征模展开方法对用于高功率微波发射系统的方角锥高斯馈源口面场进行分析，提出结合馈源远场辐射特性和避免高功率击穿折衷选定相应的高斯模注腰半径，进而确定多个波导模幅值，从而为运用模匹配或耦合波理论设计高斯馈源提供依据。     

Beiträge zur Mikrobestimmung von Kohlenstoff-14 und Tritium

Die Verwendung Con¹⁴C und Tritium zur Lösung kinetischer und analylischer Probleme erfordert zuverlässige Analysenmethoden. Es wird iiber die Herstellimg von Meβgasen durch Naβcerbrennung mil Chromsäure-Jodsäure-Gemischen, Trockenverbrennung in Gegenwart Con Katalysatoren wie Kupferoxid, Kobaltoxid und Zersetzungsprodukte des Silberpermanganats und durch Umsetziingentm geschlossenen Rohr berichtet. Die Aktivitätsniessungen erfolgten auf cerschiedene IVeise. Hier werden besonders die Ergebnisse diskutiert, die durch Ionisationskammermessungen erzielt wurden. Schlieβlich werden einfache Apparaturen zur routinemäβigen Durchfiihrung von Mikroanalysen beschrieben.     

Binary collision simulations of ion transmission through silicon single crystal films

Abstract

Computer simulation studies of the energy distribution of transmitted ions such as alpha-particles, He-, and B-ions through crystalline silicon, using the enhanced binary-collision cascade simulator MARLOWE, will be reviewed. The enhancement includes an additional electronic-energy loss (EEL) model which takes into account explicitly both the target electron density variation via the structure factors and the electron density of the projectile. Investigations of the stopping power for He ions and protons in silicon, at intermediate- and high-energies, based on the adapted EEL model and a velocity-dependent effective charge will be presented. The overall agreement between the calculated and experimentally determined stopping power data and the simulated and measured transmission spectra will be demonstrated. Effects of energy-loss straggling, core-electron contribution to the energy loss at high-energies and charge-state effects at low energies on the transmission spectra will also be discussed.     

Measurement of lattice damage caused by ion-implantation doping of semiconductors†

Two new techniques have been used to measure the lattice damage produced in gallium arsenide by the implantation of 60 keV cadmium ions. In one of these methods, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600Å. The decrease in reflectivity resulting from ion- implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed in the scanning electron microscope as a function of the angle of incidence of the electron beam on a single crystal surface. The degradation of these ‘Coates-Kikuchi’ patterns resulting from ion implantation was used to obtain a quantitative measure of the lattice damage caused by the implantation process. The results of measurements made by both of the methods described have been compared with each other, and with data obtained by the more established method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.     

并联交错PFC技术在磁体电源中的应用

并联交错功率因数校正(powerfactorcorrection,PFC)具有能减小输入电流纹波,减小电感磁芯尺寸,减小输出电容纹波、功率因数高等优点．针对其优点,考虑将该变换器应用到强磁场中心的超导磁体电源的备用方案中,以弥补现在运行电源体积过大的不足．本文主要介绍了并联交错PFC的工作原理,对其参数进行设计和选型,分析了控制方法,利用SiC器件,搭建了１kW 的实验样机,实验验证了方案的可行性,为下一步超导磁体电源的升级改造提供了理论和工程经验。     

基于均匀设计优化深山草莓花瓣离体培养及植株再生体系

应用均匀设计法对深山草莓花瓣诱导愈伤组织和愈伤组织再分化芽苗的主要因子和水平进行了探讨.结果表明,深山草莓花瓣愈伤组织诱导的适宜培养基为LS+TDZ 2.06 mg.L-1+2,4-D 0.60 mg.L-1,诱导率为98%;愈伤组织再分化芽苗的适宜培养基为1/2 LS+TDZ 2.30 mg.L-1+NAA 0.10 mg.L-1+KT1.30 mg.L-1,分化率为96.3%.炼苗移栽后观察植株的形态、花、果及生长等特征,以筛选具有优良性状的株系.     

独立双池受激布里渊散射系统中能量转换效率的研究

利用瞬态包含泵浦抽空的SBS理论模型对独立双池受激布里渊散射系统进行数值模拟，给出了能量转换效率随泵浦功率密度的变化规律。实验验证，理论值与实验结果相吻合。     

70 GHz二次谐波倍频回旋速调管研究

 对70 GHz二次谐波倍频回旋速调管高频结构和电子与波互作用进行了研究。研究了TE02模腔体绕射品质因数及模式转化,解决了二次谐波倍频回旋速调管漂移段不能截止70 GHz的TE01模而引起的腔体间高频串扰的问题。分析了注电流、输入功率、电子横纵速度比和电子注引导中心半径等参数对输出功率、增益和效率的影响。针对二次谐波回旋速调管放大器工作频带窄、效率低,进行了高频结构优化设计,显著地展宽了工作频带,提高了互作用效率。在理论分析和高频计算的基础上,建立了注-波互作用PIC（粒子模拟）模型,进行了粒子模拟计算和优化,得到了70 GHz 的二次谐波倍频四腔回旋速调管放大器设计方案。粒子模拟结果表明：在工作电压70 kV,注电流13 A,电子注横向速度与纵向速度比为1.5时,中心频率69.81 GHz输出功率256 kW,带宽160 MHz,电子效率28%,饱和增益大于44 dB。     

高功率脉冲激光对阶跃折射率多模光纤损伤机理

 理论分析和模拟仿真研究了激光点火系统中光纤端面损伤、光纤初始输入段损伤和光纤内部损伤机理。结果显示：端面损伤主要是由光纤端面的杂质和缺陷引起；光纤初始输入段损伤是由光束的初次反射造成光纤局部激光能量密度增大引起的；光纤内部体损伤主要由于激光自聚焦效应引起损伤和光纤受到的意外应力产生微小碎片，吸收激光能量，引起光纤局部损伤。给出了激光点火系统中提高光纤损伤阈值的一般方法，主要包括光纤端面处理、设计合理的激光注入耦合装置。