A novel capacitive pressure sensor structure with high sensitivity and quasi-linear responseUne nouvelle structure de capteur de pression capacitif avec haute sensibilitée et réponse quasi-linéaire

This paper describes a new capacitive structure of pressure sensor to increase simultaneously the sensitivity and the linearity of the transducer. This structure contains two capacitors which change in response to pressure, but in opposite senses. To increase even more the sensitivity of each capacitor, the pressure sensitive diaphragm carries a central boss. The optimal position and the length of the boss are also calculated. To cite this article: A. Ettouhami et al., C. R. Mecanique 332 (2004).     

后退火温度对溅射沉积Pb(Zr0.52Ti0.48)O3铁电薄膜结构和性能的影响

在具有Ti缓冲层的Pt(111)底电极上,用射频溅射工艺在较低的衬底温度(370℃)和纯Ar气氛中沉积Pb(Zr0.52Ti0.48)O3(PZT)薄膜,沉积过程中基片架作15°摇摆以提高膜厚的均匀性。然后将样品在大气中进行5min快速热退火处理,退火温度550-680℃。用XRD、SEM分析薄膜的微结构,RT66A标准铁电测试系统测量样品的铁电和介电性能。结果表明,所沉积的Pt为(111)取向,仅当后退火温度高于580℃,沉积在Pt(111)上的PZT薄膜才能形成钙钛矿结构的铁电相,退火温度在580-600℃时结晶为(110)择优取向,退火温度高于600℃时结晶为(111)择优取向。PZT薄膜的极化强度随退火温度的升高而增加,但退火温度超过650℃时漏电流急剧上升,因此退火处理的温度对PZT薄膜的结构和性能有决定性的影响。     

氘代聚合物膜靶制备技术与性能研究

 氘代聚合物膜是快点火基础物理实验的一种重要靶型。通过氘代苯乙烯单体的本体自由基聚合反应制备氘代聚苯乙烯，并利用流延法和浇铸法制备出厚度从几十nm到数百μm的膜靶。溶剂挥发过程中的随机扰动对膜厚均匀性造成影响，采用清洁的基片和在涂沫基片或模具外加防护罩可以降低这种影响。采用PVA作脱膜剂有利于获得较薄的聚合物薄膜。DSC分析表明薄膜的玻璃化转变温度与热处理过程有关，缓慢退火有利于提高Ｔ-g和储能模量。     

提高YBCO块材在外磁场中悬浮力

本给出了三种提高YBCO块材在外磁场中悬浮力的方法．第一种方法是增强外磁场，对于此方法，本研究了一块直径为30mm的圆柱状YBCO块材分别在圆柱状NdFeB永磁体和NdFeB永磁导轨上的悬浮力．测量结果表明在77K温度下YBCO块在圆柱状NdFeB永磁体上的最大悬浮力为50N，在NdFeB永磁导轨上的最大悬浮力为103．ON．第二种方法是提高YBCO块材自身的性能，包括临界电流密度、俘获磁通和块材尺寸，对于此方法，本仅研究了块材尺寸对悬浮力的影响．三块直径分别为30mm、35mm、40mm的圆柱状YBC0块材在NdFeB永磁导轨上的悬浮力被测量，77K温度下5mm悬浮间距时的悬浮力分别为103．ON、134．5N、175．ON．第三方法是将YBCO块材变成准永久磁体，此种情况下，直径为40mm的圆柱状YBCO块材在77K温度下5mm悬浮间距时的悬浮力高达218．3N．     

Novel optical film sensor design based on p-polarized reflectance

A new scheme of optical film sensor is presented. The sensor is based on p-polarized reflectance, consisting of a sensing coated substrate, is easily optimized for maximum sensitivity in different applications. The resolutions of refractive index n_f, extinction coefficient k_f and thickness h_f of the sensitive films are predicted to be 10⁻⁷, 10⁻⁵ and 10⁻³ nm, respectively. Experimentally, we selected the sol–gel derived SnO₂ films as gas-sensitive films and conducted preliminary gas-sensing test. The results indicate that novel optical film sensor scheme has higher sensitivity, and the detection sensitivity is available to 10⁻¹ ppm on the condition of optimum optical parameters and incident angle.     

磁光玻璃光纤的偏振特性及其在全光纤电流传感器中的应用

在磁光玻璃裸光纤偏振特性研究的基础上，研制磁光玻璃光纤，偏振特性及其在全光纤电流传感器中的应用。将采用模管法拉制成的磁光玻璃光纤置于亥姆霍兹线圈产生的磁场中，当线偏振光通过该光纤时，其偏振面旋转一定角度，把该角度转换成光信号的强度，然后再用仪器进行检测。通过对线偏振光偏振面在磁场中的偏振特性的测试与实验，提出用磁光玻璃光纤构成的全光纤电流传感器，可用于电流和磁场测试。     

小阶跃反应性输入时点堆中子动力学方程的解析解

对小阶跃反应性输入（0<ρ,０<β）且有温度反馈时点堆中子动力学方程进行了研究. 导出任意初始功率条件下核反应堆功率、反应性与时间的解析表达式. 分析和讨论了初始功率与输入小阶跃反应性的大小对功率、反应性变化规律的影响，得到了一些新的结果. 关键词： 中子动力学 反应性 点堆 温度反馈     

一些高Tc超导体的弹性性质

 本文用超声相比较方法测定了高T_c超导体La_1.85Sr_0.15CuO₄，La₂CuO₄和YBa₂Cu₃O₇的纵波和横波声速，进而导出了它们的纵向模量、切变模量、杨氏模量、泊松比、德拜温度及定体比热。在La_1.85Sr_0.15CuO₄样品上，还进行了压力实验，发现所有弹性模量都是随压强增加而增加。定体比热c_V和泊松比σ在高压下则略有下降。德拜温度是随压强增加而增加的。     

Behaviors of the positive temperature coefficient of resistance of poly(styrene‐co‐n‐butylacrylate) filled with Ni‐plated core‐shell polymeric particles

Conductive composite films of poly(styrene‐co‐n‐butylacrylate) copolymers filled with low‐density, Ni‐plated core‐shell polymeric particles were prepared and their behaviors of positive temperature coefficient of resistance (PTCR) were investigated. When the conductive fillers in the composite film were loaded beyond the critical volume, 10 up to 25 vol %, composite films exhibited a unique electrical resistant transition behavior, which the electrical resistance rapidly increased by several orders of magnitude at the critical temperature. The PTCR transition temperature, in general, occurred before the glass transition temperature of polymer matrix. Further increased the conductive filler loading to 30 vol %, the overpacked conduction paths were formed in the entire composite and the PTCR effects became blurred. While the composite film treated with thermal cycle several times from room temperature up to 120 °C, the electrical resistivity increased accompanied with the shift of the PTCR transition to lower temperature. The reason might have been caused by the formed interfacial cracks within the composite film. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 322–329, 2007     

镁掺杂对In2O3电导和气敏性能的影响

用共沉淀法制备了Mg2 + 掺杂的In2 O3 纳米粉 ,研究了镁掺杂对In2 O3 电导和气敏性能的影响 .结果表明 :MgO和In2 O3 间可形成有限固溶体In2 -xMgxO3 (0≤x≤ 0 .40 ) ;MgIn× 电离的空穴对材料导带电子的湮灭 ,使掺镁纳米粉的电导变得很小 ;n(Mg2 + )∶n(In3 + ) =1∶2共沉淀物于 90 0℃下热处理 4h ,用所得的纳米粉制作的传感器在 32 0～ 370℃下 ,对 45 μmol/LC2 H5OH的灵敏度达 10 2 .5 ,为相同浓度干扰气体Petrol的 12倍多 .