石墨烯能带中的重叠矩阵效应:Tight-Binding方法在模拟中的研究

采用紧束缚方法计算了石墨烯的价带(π)和导带(π*),考虑了非正交基矢下重叠矩阵效应,重叠积分参量s越小,导带越靠近费米面,而价带越远离费米面.在重叠积分参量s≤0.1时,基本保持了原子在实际空间中重叠所引起的能带的改变,太大(s=0.4)则会导致物理上失效.计算了石墨烯的能态密度,在费米面ε=0处(对应Dirac点)的能态密度为零,并且在Dirac点附近呈线性变化.     

微液滴在不同能量表面上润湿状态的分子动力学模拟

微小液滴在不同能量表面上的润湿状态对于准确预测非均相核化速率和揭示界面效应影响液滴增长微观机理具有重要意义. 通过分子动力学模拟, 研究了纳米级液滴在不同能量表面上的铺展过程和润湿形态. 结果表明, 固液界面自由能随固液作用强度增加而增加, 并呈现不同液滴铺展速率和润湿特性. 固液作用强度小于1.6的低能表面呈现疏水特征, 继续增强固液作用强度时表面变为亲水, 而固液作用强度大于3.5的高能表面上液体呈完全润湿特征. 受微尺度条件下非连续、非对称作用力影响, 微液滴气液界面存在明显波动, 呈现与宏观液滴不同的界面特征. 统计意义下, 微小液滴在不同能量表面上铺展后仍可以形成特定接触角, 该接触角随固液作用强度增加而线性减小, 模拟结果与经典润湿理论计算获得的结果呈现相似变化趋势. 模拟结果从分子尺度为核化理论中的毛细假设提供了理论支持, 揭示了液滴气液界面和接触角的波动现象, 为核化速率理论预测结果和实验测定结果之间的差异提供了定性解释.     

低As压退火对GaAs(001)表面形貌与重构的影响

在低As压条件下退火处理原子级平坦的GaAs(001) βup 2(2×4)重构表面. 利用扫描隧道显微镜对表面进行研究, 发现随着低As压退火时间的延长, 表面形貌与表面重构的演变同步进行. 表面形貌经历了从有序平坦转变为无序平坦, 然后逐渐恢复到有序平坦状态的过程. 表面重构则由βup 2(2×4)重构逐渐转变为(2×6)重构, 然后再转变为锯齿状的(2×6)重构, 并且表面形貌与表面重构的演变存在一定的相互关系.     

O(1D)和CD4反应的准经典轨线

在新的全域势能面上, 用准经典轨线方法细致地研究了O(¹D)+CD₄多通道化学反应的动力学．这个势能面是用交换不变多项式方法基于MRC+Q/aug-cc-pVTZ从头算点拟合得到的．通过计算得到了产物OD+CD₃、D+CD₂OD/CD₃O和D₂+DCOD/D₂CO的分支比、平动能分布以及角度分布,结果显示理论与实验吻合得较好, 从而说明了这个反应的同位素取代效应很小． 研究表明,O(¹D)+CD₄反应是经过陷入的抽取机理发生的： 最初主要通过D原子的抽取,并不是之前人们认为的直接C-D键的插入形成CD3OD中间物后再进而解离成各个产物通道．     

基于非同步替代光谱定标的地表下垫面影响分析

对760nm附近的氧气吸收带,选用植被、枯萎植被、人工地物、沙地和雪地五种典型地表类型,基于模拟数据进行非同步替代光谱定标方法的误差分析,比较不同地表类型得到的光谱定标准确度,为高光谱成像仪的非同步替代光谱定标提供定标图像选择策略.结果表明:运用两种光谱匹配方法——光谱角度匹配和欧氏距离法得到的定标误差基本一致;730~800nm的地表反射率曲线标准差在0.05nm以内时,定标误差集中在±0.5nm范围内;人工地物类型中个别地物如橄榄绿光泽涂料和植被大面积覆盖的图像数据不适合用于非同步替代光谱定标.     

利用时域有限差分法模拟金纳米球及球壳的光学特性

利用时域有限差分方法研究了金纳米球、金纳米球壳及多层球壳的消光特性及电场分布.结果表明:金纳米颗粒的几何参量对消光峰的位置有显著影响.随着SiO2核心半径的增大,金纳米壳的消光峰显著红移.随着金核心半径的增大,gold-silica-gold多层球壳消光谱的低能峰显著红移,而高能峰微弱蓝移.     

Biembedding Steiner Triple Systems in Surfaces Using the Bose Construction

A uniform framework is presented for biembedding Steiner triple systems obtained from the Bose construction using a cyclic group of odd order, in both orientable and nonorientable surfaces. Within this framework, in the nonorientable case, a formula is given for the number of isomorphism classes and the particular biembedding of Ducrocq and Sterboul (preprint 18pp., 1978) is identified. In the orientable case, it is shown that the biembedding of Grannell et al. (J Combin Des 6 ( 7 ), 325–336) is, up to isomorphism, the unique biembedding of its type. Automorphism groups of the biembeddings are also given.     

Characterization of Cr‐doped Sb2Te3 films and their application to phase‐change memory

Phase‐change memory (PCM) is regarded as one of the most promising candidates for the next‐generation nonvolatile memory. Its storage medium, phase‐change material, has attracted continuous exploration. Along the traditional GeTe–Sb₂Te₃ tie line, the binary compound Sb₂Te₃ is a high‐speed phase‐change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb₂Te₃, called Cr–Sb₂Te₃ (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb₂Te₃ without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST_10.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10‐year data retention is 120.8 °C, which indicates better thermal stability than GST and pure Sb₂Te₃. PCM cells based on CST_10.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr–Sb₂Te₃ with suitable composition is a promising novel phase‐change material used for PCM with high speed and good thermal stability performances. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Sulfur doping of AlN and AlGaN for improved n‐type conductivity

Achieving high levels of n‐type conductivity in AlN and high Al‐content nitride alloys is a long standing problem; significant decreases in conductivity are observed as the Al content is increased, a phenomenon that has been attributed to donors such as oxygen or silicon forming DX centers. We address this problem through a comprehensive first‐principles hybrid density functional study of potential n‐type dopants, identifying S_N and Se_N as two elements which are potential shallow donors because they do not undergo a DX transition. In particular, S_N is highly promising as an n‐type dopant because it also has a low formation energy and hence a high solubility. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

High‐perfomance Ce‐doped multicomponent garnet single crystalline film scintillators

We report for the first time the optimized content and excellent scintillation properties of single crystalline film (SCF) scintillators of multicomponent Gd_3–xLu_x Al_5–yGa_y O₁₂:Ce garnet compounds grown by liquid phase epitaxy (LPE) method. The Gd_1.5Lu_1.5Al_2.75Ga_2.25O₁₂:Ce and Gd₃Al_2.75–2Ga_2.25–3O₁₂:Ce SCF show the light yield (LY) comparable with that of high‐quality bulk crystal analogues of these garnets but faster scintillation decay and very low thermoluminescence in the above room temperature range. To our knowledge, these SCF possess the highest LY values ever obtained in LPE grown garnet SCF scintillators exceeding by at least 1.5–1.6 times the values previously reported for SCF scintillators.