Non‐contact evaluation of the electrical conductivity of thin metallic films by eddy current microscopy

An eddy current microscopy technique to evaluate the electrical conductivity of thin metallic films in a non‐contact manner is reported. A narrow track formed in an approximately 100 nm thick Au film was prepared, and a Co–Cr coated magnetic tip was driven to oscillate above the track both with and without current passing through the track. Despite the absence of current, the electromagnetic interaction between the tip and the stray magnetic field from the track gave rise to a phase delay in the probe. This was due to an eddy current being induced within part of the track. Moreover, measurements of the phase change in the probe oscillation for different metallic films with thicknesses of about 100 nm found this to be proportional to the electrical conductivity of the film. Finally, the electrical conductivity of an Al film was evaluated using the eddy current microscopy technique. Copyright © 2012 John Wiley & Sons, Ltd.     

Contribution à l'étude Électrochimique de Dérivés de l'Acide Mercapto-2 Pyridinecarboxylique-5. II

Abstract

Electrochemical caracteristics of 2-mercaptopyridine-5-carboxylic acid and its methylic ester have been determined using recent polarographic techniques. Measurements have been carried out as a function of parameters such as frequency, others surimposed signals and as a function of concentration and pH. Results are compared to those obtained for selectively methylated on sulfur or nitrogen atoms derivatives. Interpretations of the data are given. The optimal conditions for a quantitative determination by D.C. and differential pulse polarography are fixed.     

Conduction mechanism of metal-TiO2–Si structures

The conduction model has been proposed for the metal-TiO₂–Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO₂ target and annealing in the air at temperatures T?=?800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the structures have been measured over the range of T?=?283–363 K. At positive potentials on the gate, the conductivity of the MIS structures is determined by the space charge-limited current in the dielectric layer.     

Topological textures and their bifurcation processes in 2D ferromagnetic thin films

In this paper, by the use of the topological current theory, the topological structures and the dynamic processes in thin-film ferromagnetic systems are investigated directly from the viewpoint of topology. It is found that the topological charge of a thin-film ferromagnetic system can be changed by annihilation or creation processes of opposite polarized vortex–antivortex pairs taking place at space–time singularities of the normalized magnetization vector field of the system, the variation of the topological charge is integer and can further be expressed in terms of the Hopf indices and Brouwer degrees of the magnetization vector field around the singularities. Moreover, the change of the topological charge of the system is crucial to vortex core reversal processes in ferromagnetic thin films. With the help of the topological current theory and implicit function theorem, the processes of vortex merging, splitting as well as vortex core reversal are discussed in detail.     

Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

线缆系统电磁脉冲效应测量系统研制和试验

分析了实验室瞬态X射线产生的系统电磁脉冲(SGEMP)效应测试所面临的技术问题,提出了解决方法、措施以及实验室模拟瞬态X射线的SGEMP模拟试验方法。通过电子屏蔽、电磁屏蔽、光电隔离、信号对称提取等特殊技术处理,解决了SGEMP效应模拟试验方法和测量系统抗X射线、抗电磁辐射等技术问题,并在大型瞬态X射线模拟源上,测出了瞬态X射线辐照时金属腔内线缆的SGEMP效应波形及幅值。     

Spin-polarized current and tunnel magnetoresistance in heterogeneous single-barrier magnetic tunnel junctions

Current in heterogeneous tunnel junctions is studied in the framework of the parabolic conduction-band model. The developed model of the electron tunneling takes explicitly into account the difference of effective masses between ferromagnetic and insulating layers and between conduction subbands. Calculations for Fe/MgO/Fe-like structures have shown the essential impact of effective mass differences in regions (constituents) of the structure on the tunnel magnetoresistance of the junction.