Topological nature of in‐gap bound states in disordered large‐gap monolayer transition metal dichalcogenides

We propose a physical model based on disordered (a hole punched inside a material) monolayer transition metal dichalcogenides (TMDs) to demonstrate a large‐gap quantum valley Hall insulator. We find an emergence of bound states lying inside the bulk gap of the TMDs. They are strongly affected by spin–valley coupling, rest‐ and kinetic‐mass terms and the hole size. In addition, in the whole range of the hole size, at least two in‐gap bound states with opposite angular momentum, circulating around the edge of the hole, exist.Their topological insulator (TI) feature is analyzed by the Chern number, characterized by spacial distribution of their probabilities and confirmed by energy dispersion curves (energy vs. angular momentum). It not only sheds light on overcoming low‐temperature operating limitation of existing narrow‐gap TIs, but also opens an opportunity to realize valley‐ and spin‐qubits. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Prototype electrochromic device and dye sensitized solar cell using spray deposited undoped and ‘Li’ doped V2O5 thin film electrodes

Lithium (Li) (0–5 wt%) doped V₂O₅ thin films were spray deposited at 450 °C onto ITO substrates. Structural analysis using X-ray diffraction and Raman spectroscopy revealed orthorhombic phase of the films. In addition to the V₂O₅ phase, presence of VO₂ peaks due to high deposition temperature is also evident from structural and optical characterization. The non-stoichiometric nature of the films due to loss of the terminal O atom was confirmed from Raman spectroscopy. The direct band gap, indirect bandgap, and phonon energies were also calculated from optical studies. Different charge states of vanadium ions present in the film were identified from X-ray photoelectron spectroscopy study. Results from cyclic voltammetry experiments reflected significant differences between the undoped and Li doped V₂O₅ samples. Transport properties by Hall-effect measured at room temperature indicated significant increase in conductivity, carrier concentration and mobility of V₂O₅ thin films on doping with Li. A Dye Sensitized Solar Cell (DSSC) was fabricated using mobility enhanced 5 wt% Li doped V₂O₅ film as photoanode and its efficiency was found to be 2.7%. A simple electrochromic cell is fabricated using undoped V₂O₅ thin film to demonstrate the colour change.     

Band‐Gap Manipulations of Monolayer Graphene by Phenyl Radical Adsorptions: A Density Functional Theory Study

Phenyl radical (Ph^.) adsorption on monolayer graphene sheets is used to investigate the band‐gap manipulation of graphene through density functional theory. Adsorption of a single Ph^. on graphene breaks the aromatic π‐bond and generates an unpaired electron, which is delocalized to the ortho or para position. Adsorption of a second radical at the ortho or para position saturates the radical by electron pairing and results in semiconducting graphene. Adsorption of a second radical at the ortho position (ortho–ortho pairing) is found to be more favorable than adsorption at the para position (ortho–para pairing), and the ortho–ortho pairing has stronger effects on band‐gap opening compared with ortho–para pairing. Adsorption of even numbers of Ph^. on graphene by ortho–ortho and ortho–para pairings, in general, increases the band gap. Our study shows promise of band‐gap manipulation in monolayer graphene by Ph^. adsorption, leading to potential wider applications of graphene.     

Opening Band Gap of Graphene by Chemical Doping: a First Principles Study

Single atom chemically doped graphene has been theoretically studied by density functional theory. The largest band gap, 0.62 eV, appears in arsenic atom doped graphene, then 0.60 eV comes by the tin atom, whose deformations can neither be ignored. It is also found that oxygen and iron single atom embedded graphene can open band gap by 0.52 and 0.54 eV, respectively. Moreover, doping O atom shows little distortion and high stability by charge redistribution. The band gap of Fe doped graphene is opened by orbital hybridization. The other heteroatom doped results are a little inferior to them.     

Conjugated polymer nanoparticles as fluorescence switch for selective cell imaging

Fluorescence switch plays a vital role in bioelectronics and bioimaging.Herein,we presented a new kind of facile electrostatic complex nanoparticles(ECNs)for fluorescence switching in cells and marking of individual cell.The ECNs were prepared by mixing positively charged poly(6-(2-(thiophen-3-yl)ethoxy)hexyl trimethylammonium bromide)(PT)and negatively charged diarylethene sodium salt(DAECOONa).DAE-COONa is a photoswitchable molecule which can be transformed between the ring-closed fo rm and ring-open form under the irradiation of UV or visible light.The closed-form of DAE-COONa can efficie ntly quench the fluorescence of PT through intermolecular energy transfer,while the open form of DAE-COONa does not influence the emission of PT.Thus,the fluorescence of ECNs can be modulated by light irradiation,and the ECNs with good fluorescence switching performance have been employed for fluorescence imaging and individual cell lighting up process successfully.We demonstrate that the electrostatic complex strategy provides a facile method to construct fluorescence switch fo r selective cell marking and imaging applications.     

Switchable Polymerization Triggered by Fast and Quantitative Insertion of Carbon Monoxide into Cobalt–Oxygen Bonds

A strategy that uses carbon monoxide (CO) as a molecular trigger to switch the polymerization mechanism of a cobalt Salen complex [salen=(R,R)‐N,N′‐bis(3,5‐di‐tert‐butylsalicylidene)‐1,2‐cyclohexanediamine] from ring‐opening copolymerization (ROCOP) of epoxides/anhydrides to organometallic mediated controlled radical polymerization (OMRP) of acrylates is described. The key phenomenon is a rapid and quantitative insertion of CO into the Co?O bond, allowing for in situ transformation of the ROCOP active species (Salen)Co^III‐OR into the OMRP photoinitiator (Salen)Co^III‐CO₂R. The proposed mechanism, which involves CO coordination to (Salen)Co^III‐OR and subsequent intramolecular rearrangement via migratory insertion has been rationalized by DFT calculations. Regulated by both CO and visible light, on‐demand sequence control can be achieved for the one‐pot synthesis of polyester‐b‐polyacrylate diblock copolymers (?<1.15).     

多色矢量高斯-谢尔模型光束的焦移和焦开关

从交叉谱密度矩阵的传输公式出发,对多色矢量高斯-谢尔模型（GSM）光束的焦移和焦开关作了详细的研究.插入偏振片之前,多色矢量高斯-谢尔模型（GSM）光束通过硬边光阑透镜分离光学系统后,有焦移,但无焦开关;而插入偏振片之后,会出现焦开关.改变偏振片的旋转角度可以控制焦开关的特性.     

缺陷态透射率可调的三缺陷层的一维光子晶体

利用传输矩阵方法,从理论上研究了三缺陷层一维光子晶体的光学性质.在缺陷层间距足够大以致于出现缺陷态简并的情况下,调节第一或第三个缺陷层的光学厚度,光子晶体缺陷态的透射率会发生最大程度的变化.这种结构可同时具有窄带滤波器和光开关的功能,据此提出了一种低阈值光开关的设计.把折射率可调的向列型液晶作为晶体的第三个缺陷层,并用4×4传输矩阵方法计算了其缺陷态透射率与电场电压的关系.     

280mm×280mm口径单脉冲过程电光开关

用于高功率惯性约束聚变(ICF)激光驱动器的大口径电光开关均采用等离子体电极泡克耳斯盒。与传统的等离子体电极电光开关原理不同,单脉冲过程驱动电光开关没有独立的大电流等离子体发生单元,而只是通过具有较高幅值的正负开关脉冲完成对大口径电光开关的驱动。介绍单脉冲过程驱动等离子体电极泡克耳斯盒电光开关的设计,并建立280 mm×280 mm口径电光开关实验平台,利用连续激光器测试了电光开关特性,实验测得该电光开关中心处开关效率为99.3%,开关上升时间为90 ns。     

Dielectric Properties of Colossal-Dielectric-Constant Na1/2La1/2Cu3Ti4O12 Ceramics Prepared by Spark Plasma Sintering

In the current study, we report on the dielectric behavior of colossal-dielectric-constant Na_1/2La_1/2Cu₃Ti₄O₁₂ (NLCTO) ceramics prepared by mechanochemical synthesis and spark plasma sintering (SPS) at 850 °C, 900 °C, and 925 °C for 10 min. X-ray powder diffraction analysis showed that all the ceramics have a cubic phase. Scanning electron microscope observations revealed an increase in the average grain size from 175 to 300 nm with an increase in the sintering temperature. SPS NLCTO ceramics showed a room-temperature colossal dielectric constant (>10³) and a comparatively high dielectric loss (>0.1) over most of the studied frequency range (1 Hz–40 MHz). Two relaxation peaks were observed in the spectra of the electrical modulus and attributed to the response of grain and grain boundary. According to the Nyquist plots of complex impedance, the SPS NLCTO ceramics have semiconductor grains surrounded by electrically resistive grain boundaries. The colossal dielectric constant of SPS NLCTO ceramics was attributed to the internal barrier layer capacitance (IBLC) effect. The high dielectric loss is thought to be due to the low resistivity of the grain boundary of SPS NLCTO.