速调型相对论返波管理论研究

对速调型相对论返波管慢波结构色散特性及束波相互作用进行了理论研究。色散特性研究表明：器件工作模式为TM01模,近点,耦合阻抗较高。色散特性预测的工作频率与粒子模拟结果非常接近。慢波结构峰值增长率相对较小,这与电子束与慢波结构相距较大有关,因而器件从起振到饱和的时间较长。在束波相互作用理论中,全面考虑了电子束与慢波结构前向波基波、反向波－1次空间谐波及空间电荷场相互作用、谐振反射器对电子束进行的束流调制和能量调制作用,以及调制腔和提取腔处引入的耦合阻抗及轴向波数突变。稳态和非稳态计算结果均获得了超过40%的束波转换效率。     

改进的3维粒子模拟并行算法

提出了两种改进的3维粒子模拟并行算法,改进的并行算法能在每个时间步减少一次进程同步。算法分析和数值模拟表明,由于粒子运动路径和发射的初始位置与随机函数有关,只有一种改进的并行算法能保证并行计算正确。在3维粒子模拟软件CHIPIC3D上实现了改进的并行算法,应用CHIPIC3D对一种相对论返波管进行了并行模拟,模拟结果表明改进的并行算法能取得更高的加速比和效率。     

Electric field‐induced birefringence,optical rotatory power and conoscopic measurements of a chiral antiferroelectric smectic liquid crystal

Using a photoelastic modulator‐based novel set‐up, the electric field‐induced in‐plane birefringence and the optical rotatory power (ORP) were measured of an antiferroelectric liquid crystalline compound (12OF1M7) in its various phases using 30 µm homeotropic cells. Some specific signatures of the in‐plane birefringence and of the ORP for the various phases are being established. A relatively small threshold field is needed for the unwinding process of the antiferroelectric phase with a unit cell of four layers [SmC_A*(1/2)] compared with that for two layers [SmC_A*(0)]. On application of the electric field on the high temperature side of the SmC_A*(1/2) phase (80.1–81.5°C), a field‐induced phase transition is shown to occur directly to the SmC* phase, whereas on the lower temperature side (79.4–80.1°C) the transition takes place to SmC* via the SmC_A*(1/3) phase. The in‐plane birefringence exhibits a critical power law dependence for the SmC*–SmA transition. The ORP changes sign within the temperature range of the phase with a unit cell of three layers, reflecting a change in the handedness during this phase. Using tilted conoscopy, the results for the biaxiality and the apparent tilt angle for a smectic liquid crystal with a tilt angle greater than 18° in the ferroelectric phase are reported. The biaxiality implies the difference in the refractive indices between the two minor axes of the refractive index ellipsoid. The optical transmittance at visible and IR wavelengths for free‐standing films reveal characteristic reflection bands for these phases. The modulated structures of the reflected bands appear just above the SmC_A* phase and below SmC_A*(1/3); these are possibly due to an easy deformation of the phase by the surfaces.     

Photosensitivity,substituent and solvent-induced shifts in UV-visible absorption bands of naphthyl-ester liquid crystals: a comparative theoretical approach

The substituent- and solvent-induced shifts in UV-visible absorption bands of naphthyl-ester nematic liquid crystals, viz., 4-octylphenyl-6-octyloxy-2-naphthoate (NAPHE1) and 6-octyloxy-2-naphthylyl-4-octyloxybenzoate (NAPHE2), have been investigated using the DFT, CNDO/S and INDO/S methods. A correlation has been made between molecular charge distribution and phase stability based on Mulliken, Loewdin, AM1, PM3, MNDO, CNDO/S and INDO/S methods. The observed π→π* and n→π* electronic transitions have been reported. The substituent- and solvent-induced shifts in absorption bands, transition energies and energy gaps have been discussed. The photosensitivity of the molecules has been analysed based on these shifts. It has been observed that the substituent has a dominant role on both absorption maxima and energy band gap, whereas the solvent has a dominant role only on absorption maxima, and no effect has been observed on the energy gap. These shifts may provide beneficial consequences in determining the end use of compounds.     

Factorization method and new potentials from the inverted oscillator

In this article we will apply the first- and second-order supersymmetric quantum mechanics to obtain new exactly-solvable real potentials departing from the inverted oscillator potential. This system has some special properties; in particular, only very specific second-order transformations produce non-singular real potentials. It will be shown that these transformations turn out to be the so-called complex ones. Moreover, we will study the factorization method applied to the inverted oscillator and the algebraic structure of the new Hamiltonians.     

The extended Hulburt–Hirschfelder‐long‐range oscillator model for direct‐potential‐fit analysis

In the present work, an extended Hulburt–Hirschfelder oscillator model is proposed as a means of simplifying potential energy functions for direct‐potential‐fit analyses. The new potential energy function is joined smoothly to the long‐range inverse‐power dispersion energy expression. The new model is employed in direct‐potential‐fits using spectroscopic line positions that involve the ground electronic states of the principal isotopologues of hydrogen iodide and carbon monoxide, and the ground and first singlet‐sigma excited states of hydrogen fluoride and hydrogen chloride. The present methodology is found to lead to compact, flexible, and robust representations for the potential energy that compare favorably with the results of past work where more complicated models were employed.     

Performance of ring oscillators composed of gate-all-around FETs with varying numbers of nanowire channels using TCAD simulation

In this paper, we investigate the performance of ring oscillators composed of gate-all-around (GAA) silicon nanowire (NW) field-effect transistors (FETs) with four different numbers of NW channels, for sub-10-nm logic applications. Our simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (f_osc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, our work shows that the f_osc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (∼0.1 fF). Thus, our study provides an insight for determining the capacitive load and optimal number of NW channels, for device development and circuit design of GAA NW FETs.     

Interbasis expansions for isotropic harmonic oscillator

The exact solutions of the isotropic harmonic oscillator are reviewed in Cartesian, cylindrical polar and spherical coordinates. The problem of interbasis expansions of the eigenfunctions is solved completely. The explicit expansion coefficients of the basis for given coordinates in terms of other two coordinates are presented for lower excited states. Such a property is occurred only for those degenerated states for given principal quantum number n.     

变形谐振子势的能谱方程

讨论了3种变形谐振子势:左右两边不同参数的谐振子势、左边方形势加右边谐振子势和谐振子势中间加δ势中的能量本征态函数.这些函数都可以由厄米函数表示.由波函数及其一次导数在原点的衔接条件,得到了能谱方程.