Surface cavities produced by high‐dose nitrogen ion implantation into silicon

Nitrogen ion implantation (24 keV, 4.6 × 10¹⁷ cm^?2) into (100) a p‐type silicon wafer material and a subsequent electron beam annealing at 1100 °C for 15 s under high vacuum conditions leads to the formation of an uneven surface in the implanted region caused by nitrogen bubbles beneath the surface. Annealing at 1200 °C for 300 s results in surface cavities with a mean diameter of 350 nm and a surface coverage of 3–4% and an average depth of ～60 nm. Nuclear reaction analysis reveals that the nitrogen concentration in the as‐implanted state exceeds 57 at%, the value of stoichiometric Si₃N₄. Annealing at 1100 °C for 15 s slightly reduces the nitrogen peak concentration, whereas annealing at 1200 °C for 300 s induces a significant alteration to the shape of the nitrogen depth profile coupled with the lowering of the concentration close to the stoichiometry of Si₃N₄. The results present a new method of producing sub‐micrometre cavities embedded in a thin silicon nitride film on wafer silicon which may lead to novel micro‐electronic and biotechnology applications. Copyright © 2007 John Wiley & Sons, Ltd.     

高多孔度多孔硅自支撑膜的制备与表征

发光多孔硅由于在光电子学方面的应用前景而引起人们极大的关注[1]．最近多孔硅发光二极管的研究方面取得了重大进展[2]。但是，有关多孔硅的发光机制仍然存在着争论[1，3，4]，利由于消除了单晶硅衬底的影响，对脱离了硅衬底的多孔硅自支撑膜能够进行普通多孔硅所不能进行的一     

Ferrocene Compounds. XXXI. Structure of 3-Ferrocenylpropanoic Acid

The title compound was prepared by modified procedure and characterized by means of IR, [¹H] and [¹³C] NMR spectroscopy. The structure was also determined by a single-crystal X-ray diffraction (XRD). 3-Ferrocenylpropanoic acid crystallizes as orange prisms in the triclinic space group P with a = 7.645(1) Å, b = 7.953(1) Å, c = 9.961(1) Å, = 81.67(1), = 68.43(1), = 83.76(1), V = 556.3(1) ų, Z = 2, R = 0.0435. In the ferrocene skeleton, Fe-C distances are in the range 2.033(2)–2.052(2) Å and C C distances in the range 1.412(5)–1.431(3) Å. The angle defined by ring centers and Fe atom is 177.7(1). The cyclopentadienyl rings are twisted from the eclipsed conformation by 8.3(2) (average value). In the structure was observed strong intermolecular hydrogen bond of 2.670(3) Å forming cyclic dimers of the R₂ ² (8) type.     

Nitrido-silicate. II [1]. Hochtemperatur-Synthesen und Kristallstrukturen von Sr2Si5N8 und Ba2Si5N8

Nitrido-Silicates. II. High Temperature Syntheses and Crystal Structures of Sr₂Si₅N₈ and Ba₂Si₅N₈ Pure Sr₂Si₅N₈ and Ba₂Si₅N₈ were obtained by reaction of silicon diimide with metallic strontium and barium, respectively. The reactions have been carried out under nitrogen atmosphere in a specially developed high-frequency furnace at temperatures between 1 550 and 1 650°C. Sr₂Si₅N₈ (Pmn2₁, a = 571.0(2), b = 682.2(2), c = 934.1(2) pm, Z = 2, R = 0.037, wR = 0.021) and Ba₂Si₅N₈ (Pmn2₁, a = 578.3(2), b = 695.9(2), c = 939.1(2) pm, Z = 2, R = 0.022, wR = 0.018) are isotypic and contain M²⁺ ions as well as a three-dimensional covalent network structure of corner-sharing SiN₄ tetrahedra. Two sorts of N occur with molar ratio 1 : 1 which are bonded to two and three Si, respectively. Predominantly, the N which are bonded to two Si belong to the coordination spheres of the M²⁺ ions.     

Tight‐binding molecular dynamics simulation of Si?H bond dissociation in silicon clusters

New model of Si? H bond dissociation is proposed and tested in the cluster Si₁₀H₁₆ by the simulation approach that combines classic molecular dynamics method and the self‐consistent tight‐binding electronic and total energy calculation one. It is shown that the monohydride Si? H bond is unstable with respect to silicon dangling bond and bend‐bridge Si? H? Si bond formation when this cluster traps the single positive charge and that hydrogen migrates through a path involving rather rotation around the Si? Si bond than the center of this bond (the bond‐centered position). These results can be useful for understanding hydrogen‐related phenomena at surfaces, interfaces, and internal voids of various hydrogenated silicon systems: electronic devices, silicon solar cells, and nanocrystalline and porous silicon. © 2003 Wiley Periodicals, Inc. Int J Quantum Chem 93: 351–359, 2003     

XRF分析铁矿粉的标准选择判据研究和应用

本文对ＸＲＦ法分析铁矿的基体校正元素进行了研究，并建立了标准选择判据，编制的计算软件可以自动地从大量标样中选择适合该样品分析的标准。该法可用于粉末压片制样的分析，方法快速，准确度和精密度均符合生产要求。     

Synthesis and thermal decomposition of cobalt-containing oligosilanes

Oligo(phenylcobaltcarbonylsilane) was prepared from oligo(phenylsilane) and dicobalt octacarbonyl. The reaction proceeds with elimination of H₂ and CO and insertion of cobalt carbonyl fragments into the silicone backbone of oligosilane. Oligosilane containing cobalt carbonyl groups in side organic substituents was obtained from oligolmethyl(phenylethynyl)Isilane and CO₂(CO)₈. The reaction of 1,2-bis(phenylethyny1)tetramethyldisilane with Co₂(CO)₈ proceeds with the sequential attachment of cobalt carbonyl fragments to ethynyl groups to form disilane derivatives [²-CCPhCo₂(CO)₆] Thermal decomposition of cobalt-containing oligosilanes affords a mixture of paramagnets and ferromagnets.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya. No. 10, pp. 2561–2567, October, 1996.     

Multi-element characterization of silicon nitride powders by atomic and mass spectrometric solution methods

A sample pretreatment technique for silicon nitride involving digestion and matrix/traces separation was developed by means of radiotracers and applied to analysis of this material by inductively coupled plasma atomic emission spectrometry, inductively coupled plasma mass spectrometry and graphite furnace atomic absorption spectrometry. The results obtained for a high purity silicon nitride material by these methods are compared each with the other and with those obtained by neutron activation analysis. The limits of detection and the capabilities of the methods are compared and discussed.