制备高比表面积碳化硅的几种影响因素

采用溶胶凝胶法，以蔗糖和正硅酸乙酯(TEOS)为原料，草酸为TEOS水解的催化剂，制备均相碳化硅前驱体，在氩气氛和高温条件下(1 350～1 600 ℃)将碳化硅先驱体进行碳热还原，制备出高比表面积的SiC。考察了水/TEOS物质的量的比、碳/硅物质的量的比及镍盐等因素对碳化硅比表面积的影响。结果表明，当n_water/n_TEOS=7.5，n_C/n_Si=4时，适宜的镍催化剂(n_Ni/n_TEOS=0.005)，凝胶形成的时间最短，镍盐的加入可使碳热还原温度降低200 ℃。     

Synthesis and characterization of new oligosilane derivatives of iron and molybdenum

By use of salt elimination, the transition metal substituted oligosilanes (η⁵-C₅Me₄Et)Fe(CO)₂SiMe₂SiMe₂Cl 1, (η⁵-C₅Me₄Et)Mo(CO)₃SiMe₂SiMe₂Br 2, (η⁵-C₅Me₄Et)Fe(CO)₂(SiMe₂)₆(CO)₂Fe(η⁵-C₅Me₄Et) 3 and (η⁵-C₅Me₄Et)Fe(CO)₂(SiMe₂)₆Br 4 were prepared and characterized. Compound 1 is well crystallized from pentane and its structure has been determined by X-ray diffraction analysis.     

Synthesis of New Lithium Ionic Conductor Thio-LISICON—Lithium Silicon Sulfides System

The new lithium ionic conductors, thio-LISICON (LIthium SuperIonic CONductor), were found in the ternary Li₂S-SiS₂-Al₂S₃ and Li₂S-SiS₂-P₂S₅ systems. Their structures of new materials, Li_4+xSi_1−xAl_xS₄ and Li_4−xSi_1−xP_xS₄ were determined by X-ray Rietveld analysis, and the electric and electrochemical properties were studied by electronic conductivity, ac conductivity and cyclic voltammogram measurements. The structure of the host material, Li₄SiS₄ is related to the γ-Li₃PO₄-type structure, and when the Li⁺ interstitials or Li⁺ vacancies were created by the partial substitutions of Al³⁺ or P⁵⁺ for Si⁴⁺, large increases in conductivity occur. The solid solution member x=0.6 in Li_4−xSi_1−xP_xS₄ showed high conductivity of 6.4×10^-4 S cm⁻¹ at 27°C with negligible electronic conductivity. The new solid solution, Li_4−xSi_1−xP_xS₄, also has high electrochemical stability up to ∼5 V vs Li at room temperature. All-solid-state lithium cells were investigated using the Li_3.4Si_0.4P_0.6S₄ electrolyte, LiCoO₂ cathode and In anode.     

The interactions of (=O→Si)-(benzoyloxymethyl)trifluoro-and -(benzoyloxymethyl) methyldifluorosilanes with a solvent

The IR spectra of solutions of (=OSi)-(benzoyloxymethyl)trifluorosilane (1),-(benzoyloxymethyl)methyldifluorosilane (2), and butyl benzoate (3) are examined in the region of thev(C=O) stretching vibrations in 24 solvents. The ability of compounds1—3 to undergo specific intermolecular interactions is evaluated from the dependence ofv(C=O) on the Kamlet-Taft (^*,, ) parameters, which was obtained for the carbonyl groups involved in the intramolecular coordinate (=OSi) bond and for free carbonyl groups. The corresponding values of the coefficients in the Kamlet-Taft equations are indicative of a weak ability of pentacoordinate silicon compounds1 and2 to undergo acid-base interactions.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 689–692, April, 1995.     

p—Si上电沉积Ni—W—P薄膜的结构与热稳定性

研究了ｐ－Ｓｉ上恒电流沉积Ｎｉ－Ｗ－Ｐ合金薄膜组成与结构的关系，讨论了镀层的组成、结构随沉积时间的变化．测定了非晶合金的晶体结构随热处理温度的改变以及ＤＴＡ曲线，结果表明，非晶Ｎｉ－Ｗ－Ｐ合金在晶化过程中形成两个纳米超微晶相，非晶Ｎｉ－Ｗ－Ｐ薄膜的热稳定性远高于通常使用的非晶Ｎｉ－Ｐ薄膜．     

Structural evolution of calcium-exchanged (NH4)2SiF6-dealuminated Y zeolite after various chemical treatments

The structural evolution of Y zeolite (Si/Al 2.17) weakly dealuminated by hexafluorosilicate (Si/Al 3.13), denoted Y_D, and exchanged with calcium (CaY_D), has been studied after acid–base treatments at 80 °C close to the cation exchange conditions. The stability of the samples was followed by X-ray diffraction and solid-state NMR of ²⁹Si and ²⁷Al; Y_D zeolite was completely destroyed by treatment with acid pH 2.5 and suffered serious degradation on treatment with alkali at pH 11.8. The introduction of calcium improved the stability of the zeolite in acid and base. In acid CaY_D was not destroyed until pH 1. At pH 2, silicon and aluminium were extracted and an amorphous phase was formed. Base treatment at pH 13 did not affect the calcium-exchanged zeolite.     

Structural materials: metal-silicon-Boron. The Nb-rich corner of the Nb-Si-B system

Phase equilibria in the Nb-Nb₅Si₃-NbB region were studied in the melting (crystallization) range by means of light microscopy, XRD, SEM and EMPA on alloys after arc-melting and annealing at 1800°C and at subsolidus temperatures. Phase transition and melting temperatures were determined by DTA and pyrometric Pirani-Alterthum technique resulting in a solidus projection and two isopleths, Nb₇₇Si₂₃-Nb₇₇B₂₃ and Nb₉₉Si₁-Nb₅Si₂B. The T₂-phase Nb₅Si_3−xB_x (0?x?2, Cr₅B₃-type) was found to form equilibria with (Nb), NbB, Nb₃Si, and with the T₁-phase (Mn₅Si₃ derivative type). The T₂-phase melts incongruently (Nb₅Si_1.8B_1.2 at 2245°C) and forms a quasibinary eutectic with the niobium solid solution on a minimum tie-line at ∼1880°C.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Polymeric organosilicon systems. XVII. Synthesis and photochemical and conducting properties of poly[o-and m-(disilanylene)phenylene]s

Poly[o-(tetramethyldisilanylene)phenylene] ( 2a ), poly[o-(1,2-dimethyldiphenyldisilanylene)-phenylene] ( 2b ), poly[m-(tetramethyldisilanylene)phenylene] ( 2c ), and poly[m-(1,2-dimethyldiphenyldisilanylene)phenylene] ( 2d ) were prepared by the sodium condensation reaction of the corresponding 1,2-and 1,3-bis (chlorosilyl)benzenes in toluene. Irradiation of thin films of 2a-2d in air resulted in a rapid decrease of absorption maxima in the ultraviolet region. The photolysis of 2b and 2d in benzene afforded photodegradation products with low molecular weights. When thin films of 2b and 2d were doped with antimony pentafluoride vapor, films which have conductivities of semi-conductor level were obtained. © 1993 John Wiley & Sons, Inc.