Influence of channeling effects on ion distribution and damage profiles during high energy ion implantation in Si

Nitrogen implantation has been performed in silicon [001] crystals in carefully controlled alignment conditions. The channeling effects are clearly evident when implanting in [001] and [011] directions at energies ranging from 0.6 to 1.4 MeV. Both ion distribution and damage profiles are strongly influenced by channeling effects during ion implantation. The angular region around the [001] direction has been also investigated by implanting at small angles with respect to the axis. The same kind of study has been performed by implanting at different angles with respect to the planar (011) direction. The ion distributions (investigated by SIMS) show a strong dependence upon the alignment conditions. Moreover in high energy ion implantation, the lattice damage is located deep inside the crystal, leaving the surface layer almost unperturbed. The channeling effects on the damage production have been investigated by double crystal diffraction (DCD) in the low-dose regime and by RBS-channeling experiments (after implantation at doses greater than 1 × 10¹⁵ cm^–2) and for different ion alignment conditions.A big increase in the ion ranges and a strong reduction in the lattice damage is evident when implanting along major crystal axes. No saturatíon of the lattice damage and of the channelled component of the beam has been detected if the implantation is performed parallel to the [011] axis.     

硅钼杂多阴离子薄膜修饰电极的研究和应用——线性扫描伏安法测定水中可溶性硅酸盐

本文研究了以玻碳电极为基体的1:12硅钼杂多酸根(SiMo_(12)O_(40)~(4-)简称12-MSA)修饰电极的制备及其电化学行为,将12-MSA电极应用于线性扫描伏安法测定天然水中可溶性硅酸盐,结果满意.硅浓度在8.0×10~(-7)～1.7×10~(-3)mol/L,相对标准偏差(n=7)为1.85％,加标回收率为98.2％～103.6％,SiMo_(12)电极具有优良的选择性和稳定性。     

制备高比表面积碳化硅的几种影响因素

采用溶胶凝胶法，以蔗糖和正硅酸乙酯(TEOS)为原料，草酸为TEOS水解的催化剂，制备均相碳化硅前驱体，在氩气氛和高温条件下(1 350～1 600 ℃)将碳化硅先驱体进行碳热还原，制备出高比表面积的SiC。考察了水/TEOS物质的量的比、碳/硅物质的量的比及镍盐等因素对碳化硅比表面积的影响。结果表明，当n_water/n_TEOS=7.5，n_C/n_Si=4时，适宜的镍催化剂(n_Ni/n_TEOS=0.005)，凝胶形成的时间最短，镍盐的加入可使碳热还原温度降低200 ℃。     

Synthesis and characterization of new oligosilane derivatives of iron and molybdenum

By use of salt elimination, the transition metal substituted oligosilanes (η⁵-C₅Me₄Et)Fe(CO)₂SiMe₂SiMe₂Cl 1, (η⁵-C₅Me₄Et)Mo(CO)₃SiMe₂SiMe₂Br 2, (η⁵-C₅Me₄Et)Fe(CO)₂(SiMe₂)₆(CO)₂Fe(η⁵-C₅Me₄Et) 3 and (η⁵-C₅Me₄Et)Fe(CO)₂(SiMe₂)₆Br 4 were prepared and characterized. Compound 1 is well crystallized from pentane and its structure has been determined by X-ray diffraction analysis.     

The interactions of (=O→Si)-(benzoyloxymethyl)trifluoro-and -(benzoyloxymethyl) methyldifluorosilanes with a solvent

The IR spectra of solutions of (=OSi)-(benzoyloxymethyl)trifluorosilane (1),-(benzoyloxymethyl)methyldifluorosilane (2), and butyl benzoate (3) are examined in the region of thev(C=O) stretching vibrations in 24 solvents. The ability of compounds1—3 to undergo specific intermolecular interactions is evaluated from the dependence ofv(C=O) on the Kamlet-Taft (^*,, ) parameters, which was obtained for the carbonyl groups involved in the intramolecular coordinate (=OSi) bond and for free carbonyl groups. The corresponding values of the coefficients in the Kamlet-Taft equations are indicative of a weak ability of pentacoordinate silicon compounds1 and2 to undergo acid-base interactions.Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 4, pp. 689–692, April, 1995.     

p—Si上电沉积Ni—W—P薄膜的结构与热稳定性

研究了ｐ－Ｓｉ上恒电流沉积Ｎｉ－Ｗ－Ｐ合金薄膜组成与结构的关系，讨论了镀层的组成、结构随沉积时间的变化．测定了非晶合金的晶体结构随热处理温度的改变以及ＤＴＡ曲线，结果表明，非晶Ｎｉ－Ｗ－Ｐ合金在晶化过程中形成两个纳米超微晶相，非晶Ｎｉ－Ｗ－Ｐ薄膜的热稳定性远高于通常使用的非晶Ｎｉ－Ｐ薄膜．     

Structural evolution of calcium-exchanged (NH4)2SiF6-dealuminated Y zeolite after various chemical treatments

The structural evolution of Y zeolite (Si/Al 2.17) weakly dealuminated by hexafluorosilicate (Si/Al 3.13), denoted Y_D, and exchanged with calcium (CaY_D), has been studied after acid–base treatments at 80 °C close to the cation exchange conditions. The stability of the samples was followed by X-ray diffraction and solid-state NMR of ²⁹Si and ²⁷Al; Y_D zeolite was completely destroyed by treatment with acid pH 2.5 and suffered serious degradation on treatment with alkali at pH 11.8. The introduction of calcium improved the stability of the zeolite in acid and base. In acid CaY_D was not destroyed until pH 1. At pH 2, silicon and aluminium were extracted and an amorphous phase was formed. Base treatment at pH 13 did not affect the calcium-exchanged zeolite.     

Structural materials: metal-silicon-Boron. The Nb-rich corner of the Nb-Si-B system

Phase equilibria in the Nb-Nb₅Si₃-NbB region were studied in the melting (crystallization) range by means of light microscopy, XRD, SEM and EMPA on alloys after arc-melting and annealing at 1800°C and at subsolidus temperatures. Phase transition and melting temperatures were determined by DTA and pyrometric Pirani-Alterthum technique resulting in a solidus projection and two isopleths, Nb₇₇Si₂₃-Nb₇₇B₂₃ and Nb₉₉Si₁-Nb₅Si₂B. The T₂-phase Nb₅Si_3−xB_x (0?x?2, Cr₅B₃-type) was found to form equilibria with (Nb), NbB, Nb₃Si, and with the T₁-phase (Mn₅Si₃ derivative type). The T₂-phase melts incongruently (Nb₅Si_1.8B_1.2 at 2245°C) and forms a quasibinary eutectic with the niobium solid solution on a minimum tie-line at ∼1880°C.     

XRD-Studies of SiC/Si layers on carbon substrates

Structural investigations of thin films of SiC, SiC with free silicon and various titanium suicides (TiSi₂, TiSi and Ti₅Si₃) are described. The crystal phases have been identified using X-ray diffractometry. The growth of reaction products from surface reactions between silicon and deposited titanium can be observed.Dedicated to Professor Dr. rer.nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Polymeric organosilicon systems. XVII. Synthesis and photochemical and conducting properties of poly[o-and m-(disilanylene)phenylene]s

Poly[o-(tetramethyldisilanylene)phenylene] ( 2a ), poly[o-(1,2-dimethyldiphenyldisilanylene)-phenylene] ( 2b ), poly[m-(tetramethyldisilanylene)phenylene] ( 2c ), and poly[m-(1,2-dimethyldiphenyldisilanylene)phenylene] ( 2d ) were prepared by the sodium condensation reaction of the corresponding 1,2-and 1,3-bis (chlorosilyl)benzenes in toluene. Irradiation of thin films of 2a-2d in air resulted in a rapid decrease of absorption maxima in the ultraviolet region. The photolysis of 2b and 2d in benzene afforded photodegradation products with low molecular weights. When thin films of 2b and 2d were doped with antimony pentafluoride vapor, films which have conductivities of semi-conductor level were obtained. © 1993 John Wiley & Sons, Inc.