A combined transient and steady state approach for robust lifetime spectroscopy with micrometer resolution

We present the combination of two complementary micro‐photoluminescence spectroscopic techniques operating in transient and steady state condition, respectively. Introducing the time domain into the well‐established micro‐photoluminescence mapping approach operating under steady state conditions demonstrates a distinct improvement of the robustness and reliability in the determination of charge carrier lifetime measured with micrometer spatial resolution. Lifetimes from 50 ns to above ms are accessible. We elaborate a calibration procedure and apply the combined all‐photoluminescence setup to high‐performance multicrystalline silicon. A lifetime image obtained from the established photoluminescence imaging technique is reconstructed from the microscopic map by considering lateral diffusion and optical blurring, revealing a more detrimental influence of small angle grain boundaries as well as a higher lifetime within grains as may be deduced from the standard imaging technique. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

利用多像素光子计数器的光学串话效应提高光子探测效率

通过分析多像素光子计数器(MPPC)的工作原理和其光学串话(OC)效应的特点,提出在使用MPPC输出雪崩信号的幅度或电荷量作为光子计数的参量时,利用MPPC的OC效应能提高MPPC的光子探测效率的观点,并从理论上分析了OC效应对光子探测效率的影响。理论分析结果显示,在这两种光子计数模式下,利用OC效应能明显提高MPPC的光子探测效率。利用本文模型计算得出当MPPC的雪崩单元数M为1 600个,忽略OC效应时的光子探测效率等于30%,光学串话概率等于50%,以及单脉冲入射光子数均值为10时,包含OC效应影响的等效光子探测效率可提高50%,达45%左右。该结果对MPPC在天体物理、粒子物理、荧光光谱探测等弱光探测场合的应用有一定指导意义。     

Thermal stability of amorphous SiOC/crystalline Fe composite

We examined the thermal stability of amorphous silicon oxycarbide (SiOC) and crystalline Fe composite by in situ and ex situ annealing. The Fe/SiOC multilayer thin films were grown via magnetron sputtering with controlled length scales on a surface-oxidized Si (100) substrate. These Fe/SiOC multilayers were in situ or ex situ annealed at temperature of 600 °C or lower. The thin multilayer sample (~10 nm) was observed to have a layer breakdown after 600 °C annealing. Diffusion starts from low groove angle triple junctions in Fe layers. In contrast, the thick multilayer structure (~70 nm) was found to be stable and an intermixed layer (Fe_xSi_yO_z) was observed after 600 °C annealing. The thickness of the intermixed layer does not vary as annealing time goes up. The results suggest that the Fe_xSi_yO_z layer can impede further Fe, Si and O diffusion, and assists in maintaining morphological stability.     

Progress on accurate measurement of the Planck constant:Watt balance and counting atoms

The Planck constant h is one of the most significant constants in quantum physics.Recently,the precision measurement of the value of h has been a hot issue due to its important role for the establishment of both a new SI and a revised fundamental physical constant system.Up to date,two approaches,the watt balance and counting atoms,have been employed to determine the Planck constant at a level of several parts in 108.In this paper,the principle and progress on precision measurement of the Planck constant using watt balance and counting atoms at national metrology institutes are reviewed.Further improvement in determining the Planck constant and possible developments of a revised physical constant system in future are discussed.     

Different charging behaviors between electrons and holes in Si nanocrystals embedded in SiN_x matrix by the influence of near-interface oxide traps

Si-rich silicon nitride films are prepared by plasma-enhanced chemical vapor deposition method,followed by thermal annealing to form the Si nanocrystals(Si-NCs)embedded in Si Nx floating gate MOS structures.The capacitance–voltage(C–V),current–voltage(I–V),and admittance–voltage(G–V)measurements are used to investigate the charging characteristics.It is found that the maximum flat band voltage shift(△VFB)due to full charged holes(～6.2 V)is much larger than that due to full charged electrons(～1 V).The charging displacement current peaks of electrons and holes can be also observed by the I–V measurements,respectively.From the G–V measurements we find that the hole injection is influenced by the oxide hole traps which are located near the Si O2/Si-substrate interface.Combining the results of C–V and G–V measurements,we find that the hole charging of the Si-NCs occurs via a two-step tunneling mechanism.The evolution of G–V peak originated from oxide traps exhibits the process of hole injection into these defects and transferring to the Si-NCs.     

Improvement in electrical and photovoltaic properties of a-Si/c-Si heterojunction with slanted nano-columnar amorphous silicon thin films for photovoltaic applications

The flat a-Si and slanted nanocolumnar (S-nC) a-Si thin films were prepared on c-Si and corning glass substrates by e-beam physical vapor deposition (EB-PVD) technique. The structural properties of all the grown thin films were determined by X-Ray Diffraction (XRD) analysis and Raman spectroscopy. Surface and cross-sectional morphology of a-Si/c-Si and S-nC a-Si/c-Si heterojunctions were investigated by Field Emission Scanning Electron Microscopy (FE-SEM). Sculptured thin films demonstrate potential for significant nanoscale applications in the area of thin film technology. The electrical and photovoltaic properties of these heterojunctions have been investigated by means of dc current–voltage (I–V) measurements at room temperature in dark and light conditions. The S-nC STFs' performance has been found to be improvable on changing the morphology of the thin film. We have found that, the porous morphology of this structure improves the photosensitivity features in photovoltaic devices and solar cell technology. We gained a high open voltage value, such as 900 mV in S-nC a-Si/c-Si thin film, without any doping process.     

Direct Evidence for Intermolecular Oxidative Addition of σ(SiSi) Bonds to Gold

Oxidative addition plays a major role in transition‐metal catalysis, but this elementary step remains very elusive in gold chemistry. It is now revealed that in the presence of GaCl₃, phosphine gold chlorides promote the oxidative addition of disilanes at low temperature. The ensuing bis(silyl) gold(III) complexes were characterized by quantitative ³¹P and ²⁹Si NMR spectroscopy. Their structures (distorted Y shape) and the reaction profile of σ(Si? Si) bond activation were analyzed by DFT calculations. These results provide evidence for the intermolecular oxidative addition of σ(Si? Si) bonds to gold and open promising perspectives for the development of new gold‐catalyzed redox transformations.     

Synthesis and Cytotoxic Activity of 1‐{3‐[1‐(5‐Organylsilylfuran‐2‐yl)silinan‐1‐yl]propyl}amines and Some Trimethylgermyl Analogues

New highly cytotoxic 1‐{3‐[1‐(5‐organylsilyl‐furan‐2‐yl)silinan‐1‐yl]propyl}amines and some trimethylgermyl analogues (IC₅₀ 1–7 μg mL^?1) have been synthesized by a hydrosilylation reaction of aliphatic and heterocyclic N‐allylamines in the presence of Speier’s catalyst. The effects of the silacycle, the element‐organic substituent in position 5 of the furan ring, and the structure of the amine on the cytotoxicity of the new compounds have been studied.     

Bis[N,N′‐diisopropylbenzamidinato(−)]silicon(II): Lewis Acid/Base Reactions with Triorganylboranes

Reaction of the donor‐stabilized silylene 1 (which is three‐coordinate in the solid state and four‐coordinate in solution) with BEt₃ and BPh₃ leads to the formation of the Lewis acid/base complexes 2 and 3 , respectively, which are the first five‐coordinate silicon compounds with an Si?B bond. These compounds were structurally characterized by crystal structure analyses and by multinuclear NMR spectroscopic studies in the solid state and in solution. Additionally, the bonding situation in 2 and 3 was analyzed by quantum chemical studies.     

Seeding Molecular Rotators on a Passivated Silicon Surface

Thermally activated rotation of single molecules adsorbed on a silicon‐based surface between 77 and 150 K has been successfully achieved. This remarkable phenomenon relies on a nanoporous supramolecular network, which acts as a template to seed periodic molecule rotors on the surface. Thermal activation of rotation has been demonstrated by STM experiments and confirmed by theoretical calculations.