Photocatalytic E→Z Contra-Thermodynamic Isomerization of Vinyl Silanes with Lewis Base

Herein, we disclosed the contra-thermodynamic E→Z isomerization of alkenyl silanes, according to the in situ formation of a chromophoric species, in the presence of rac-BINAP as the catalyst. The reaction carried out in DMSO or CH₃CN under irradiation at 405 nm allowed the interconversion of the E-isomers into the Z-congeners in good to excellent yields and outstanding Z/E selectivities, on 18 examples. Finally, the mechanism of this E→Z isomerization was studied to get insight into the reaction mechanism.     

An Anionic Amido-Substituted Seven-Vertex Siliconoid Cluster

The silanide [Si₄{N(SiMe₃)Dipp}₃]⁻ ( 1 ) transforms into the anionic siliconoid cluster [Si₇{N(SiMe₃)Dipp}₃]⁻ ( 2 ) with four unsubstituted silicon atoms as a contact ion pair with [K([18]crown-6)] in C₆D₆ at room temperature within five weeks. Anion 2 was investigated by natural population analysis and visualization of intrinsic atomic orbitals. Magnetically induced current-density calculations of 2 revealed two distinct strong diatropic vortices that sum up in one direction and create a strongly shielded apical silicon atom in 2 .     

Effect of Elicitation with Iron Chelate and Sodium Metasilicate on Phenolic Compounds in Legume Sprouts

Seven-day-old sprouts of fenugreek (Trigonella foenum-graecum L.), lentil (Lens culinaris L.), and alfalfa (Medicago sativa L.) were studied. The legume seeds and then sprouts were soaked each day for 30 min during 6 days with water (control) or mixture of Fe-EDTA and sodium silicate (Optysil), or sodium silicate (Na-Sil) alone. Germination and sprout growing was carried out at temperature 20 ± 2 °C in 16/8 h (day/night) conditions. Phenolic compounds (free, ester, and glycosides) content were determined by HPLC-ESI-MS/MS using a multiple reaction monitoring of selected ions. Flavonoids and phenolic acids were released from their esters after acid hydrolysis and from glycosides by alkaline hydrolysis. The presence and high content of (−)-epicatechin (EC) in fenugreek sprouts was demonstrated for the first time. Applied elicitors decreased the level of free EC in fenugreek and alfalfa sprouts but enhanced the content of its esters. Besides, elicitors decreased the content of quercetin glycosides in lentil and fenugreek sprouts but increased the content of quercetin and apigenin glycosides in alfalfa sprouts. The applied elicitors decreased the glycoside levels of most phenolic acids in lentil and p-hydroxybenzoic acid in fenugreek, while they increased the content of this acid in alfalfa. The mixture of iron chelate and sodium silicate had less effect on changes in flavonoid and phenolic acid content in legume sprouts than silicate alone. In general, the used elicitors increased the content of total phenolic compounds in fenugreek and alfalfa sprouts and decreased the content in lentil sprouts. Among the evaluated elicitors, Optysil seems to be worth recommending due to the presence of iron chelate, which can be used to enrich sprouts with this element.     

Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon

Recently, a new carrier‐induced defect has been reported in multi‐crystalline silicon (mc‐Si), and has been shown to be particularly detrimental to the performance of passivated emitter and rear contact (PERC) cells. Under normal conditions, this defect can take years to fully form. This Letter reports on the accelerated formation and subsequent passivation of this carrier‐induced defect through the use of high illumination intensity and elevated temperatures resulting in passivation within minutes. The process was tested on industrial mc‐Si PERC solar cells, where degradation after a 100 hour stability test was suppressed to only 0.1% absolute compared to 2.1% for non‐treated cells. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Investigation of fill factor losses on 20.2% efficient n‐type mono‐like silicon solar cells with laser contact opening

Large area (243.36 cm²) back‐junction passivated emitter, rear totally diffused (PERT) solar cells with laser contact opening (LCO) on n‐type mono‐like crystalline Si with efficiencies of 20.2% are presented. Boron emitters with high electrical quality (implied open circuit voltage iV_OC up to 700 mV) are formed during a co‐diffusion step using SiO_x:B layers. Increasing the rear metal contact coverage, we observed a decrease in fill factor (FF) instead of the expected increase due to the decrease of the back side series resistance. We show that it can be attributed to recombination centers (RCs) in the space charge region underneath the contact spots inducing an increasing second diode contribution. The presented empirical model for the RCs implemented in Synopsys Sentaurus TCAD allows for a successful reproduction of the FF, pseudo FF and V_OC behaviour with contact coverage. According to this model, the RCs induced by laser ablation and subsequently evaporation of Al have a shallow exponential distribution with a characteristic length of L_T = 0.2 µm and an effective surface density of N *_T0 = 25 cm^–1. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Model based prediction of the trap limited diffusion of hydrogen in post‐hydrogenated amorphous silicon

The diffusion of hydrogen within an hydrogenated amorphous silicon (a‐Si:H) layer is based on a trap limited process. Therefore, the diffusion becomes a self‐limiting process with a decreasing diffusion velocity for increasing hydrogen content. In consequence, there is a strong demand for accurate experimental determination of the hydrogen distribution. Nuclear resonant reaction analysis (NRRA) offers the possibility of a non‐destructive measurement of the hydrogen distribution in condensed matter like a‐Si:H thin films. However, the availability of a particle accelerator for NRR‐analysis is limited and the related costs are high. In comparison, Fourier transform infrared spectroscopy (FTIR) is also a common method to determine the total hydrogen content of an a‐Si:H layer. FTIR spectrometers are practical table‐top units but lack spatial resolution. In this study, an approach is discussed that greatly reduces the need for complex and expensive NRR‐analysis. A model based prediction of hydrogen depth profiles based on a single NRRA measurement and further FTIR measurements enables to investigate the trap limited hydrogen diffusion within a‐Si:H. The model is validated by hydrogen diffusion experiments during the post‐hydrogenation of hydrogen‐free sputtered a‐Si. The model based prediction of hydrogen depth profiles in a‐Si:H allows more precise design of experiments, prevents misinterpretations, avoids unnecessary NRRA measurements and thus saves time and expense. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Hybrid process for texturization of diamond wire sawn multicrystalline silicon solar cell

Acid texture is difficult for diamond wire sawn (DWS) multicrystalline silicon (mc‐Si) wafer owing to the inhomogeneous distribution of damage layer on the surface. In this article, metal‐assisted chemical etching (MACE) has been selected for introducing a porous seeding layer to induce acid texturing etching. SEM results show that the oval pit structures coverage get obvious improvement even on the smooth areas. Owing to the further improved light absorption ability by second MACE and nanostructure rebuilding (NSR) process, nanostructured DWS mc‐Si solar cell has exhibited a conversion efficiency of 17.96%, which is 0.45% higher than that of DWS wafer with simple acid texture process. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Multi‐crystalline silicon solar cells with metal‐assisted nano‐texturing using HNO3 as hole injection agent

In this study, metal‐assisted etching (MAE) with nitric acid (HNO₃) as a hole injecting agent has been employed to texture multi‐crystalline silicon wafers. It was previously proven that addition of HNO₃ enabled control of surface texturing so as to form nano‐cone shaped structures rather than nanowires. The process parameters optimized for optically efficient texturing have been applied to multi‐crystalline wafers. Fabrication of p‐type Al:BSF cells have been carried out on textured samples with thermal SiO₂/PECVD‐SiN_x stack passivation and screen printed metallization. Firing process has been optimized in order to obtain the best contact formation. Finally, j_sc enhancement of 0.9 mA/cm² and 0.6% absolute increase in the efficiency have been achieved. This proves that the optimized MAE texture process can be successfully used in multi‐crystalline wafer texturing with standard passivation methods.

J –V curves and SEM images of the nano and iso‐textured samples. j_sc enhancement of 0.9 mA/cm² together with 0.6% absolute efficiency gain was observed on nano‐textured samples.     

基于机械-化学的方法在硅表面制造功能化结构

"利用机械与化学结合的方法在芳烃重氮盐溶液中用金刚石刀具切削硅片,使得芳香烃分子和硅之间以共价键连接,实现了对硅片的"成形并功能化"的一步完成．研究了在大气环境如何利用金刚石刀具在硅表面加工出表面质量较好的微结构,为下一步在溶液中"成形并功能化"硅提供好的基底．在溶液中对硅表面进行可控自组装实验,初步研究了切削速度和组装时间对切削处生成自组装膜质量的影响,总结出较适合膜生长的参数．用X射线光电子能谱对自组装膜进行了检测,用扫描电子显微镜和原子力显微镜对自组装膜的表面形貌进行了表征,并用原子力显微镜对自     

Click Chemistry in Ultra-high Vacuum – Tetrazine Coupling with Methyl Enol Ether Covalently Linked to Si(001)

The additive-free tetrazine/enol ether click reaction was performed in ultra-high vacuum (UHV) with an enol ether group covalently linked to a silicon surface: Dimethyl 1,2,4,5-tetrazine-3,6-dicarboxylate molecules were coupled to the enol ether group of a functionalized cyclooctyne which was adsorbed on the silicon (001) surface via the strained triple bond of cyclooctyne. The reaction was observed at a substrate temperature of 380 K by means of X-ray photoelectron spectroscopy (XPS). A moderate energy barrier was deduced for this click reaction in vacuum by means of density functional theory based calculations, in good agreement with the experimental results. This UHV-compatible click reaction thus opens a new, flexible route for synthesizing covalently bound organic architectures.