多元方法研究单摆运动特性

根据霍尔效应原理,利用单片机技术实现了对单摆运动周期和重力加速度的实时测量,并使用photoshop,excel,matlab,tracker等软件对实验数据进行处理和分析。     

Comparison of the 13C (C = N) chemical shifts of substituted N‐(phenyl‐ethylene)‐anilines and substituted N‐(benzylidene)‐anilines

Comparison of ¹³C NMR of C = N bond chemical shifts δ_C(C = N) in substituted N‐(phenyl‐ethylene)‐anilines XArC(Me) = NArY (XPEAYs) with that in substituted N‐(benzylidene)‐anilines XArCH = NArY (XBAYs) was carried out. The δ_C(C = N) of 61 samples of XPEAYs were measured, and the substituent effect on their δ_C(C = N) were investigated. The results show the factors affecting the δ_C(C = N) of XPEAYs are quite different from that of XBAYs. A penta‐parameter correlation equation was obtained for the 61 compounds, which has correlation coefficient 0.9922 and standard error 0.12 ppm. The result indicates that, in XPEAYs, the inductive effects of substituents X and Y are major factors affecting the δ_C(C = N), while the conjugative effect of them have very little effect on the δ_C(C = N) and can be ignored. The substituent‐specific cross‐interaction effects between X and Y and between Me of C = N bond and substituent Y are important factors affecting the δ_C(C = N). Also, the excited‐state substituent parameter of substitute Y has certain contribution to the δ_C(C = N). Copyright © 2015 John Wiley & Sons, Ltd.     

Control of electron spin–orbit anisotropy in pyramidal InAs quantum dots

We investigate the electron spin–orbit interaction anisotropy of pyramidal InAs quantum dots using a fully three-dimensional Hamiltonian. The dependence of the spin–orbit interaction strength on the orientation of externally applied in-plane magnetic fields is consistent with recent experiments, and it can be explained from the interplay between Rashba and Dresselhaus spin–orbit terms in dots with asymmetric confinement. Based on this, we propose manipulating the dot composition and height as efficient means for controlling the spin–orbit anisotropy.     

Aharonov–Bohm effect in non-uniform crater-like quantum dot with double rim

We study electron energies in a double concentric quantum ring with anisotropy in the rims heights in the presence of the external magnetic field applied along the symmetry axis. To this end, we consider a model in which the thickness grows linearly from the axis up to the inner rim with a slope different from one between the inner and the outer rims. The anisotropy in the rims heights originated by the presence in the structure of various valleys we simulate by periodic dependence of the slope on the radial direction. We show that the wave functions of the electron confined in such structure can be found analytically if the slopes in all radial directions are the same, and by using a simple exact diagonalization procedure otherwise. The behavior of the electron energies as functions of the magnetic field, rings radii and rims heights, as well as the number of the valleys and their depths is consistently described with our formalism. The entanglement of the states with different radial and orbital quantum numbers, the period and the amplitude of the Aharonov–Bohm oscillations are very sensible to any variations of the rims heights.     

A scheme for a topological insulator field effect transistor

We propose a scheme for a topological insulator field effect transistor. The idea is based on the gate voltage control of the Dirac fermions in a ferromagnetic topological insulator channel with perpendicular magnetization connecting to two metallic topological insulator leads. Our theoretical analysis shows that the proposed device displays a switching effect with high on/off current ratio and a negative differential conductance with a good peak to valley ratio.     

利用多像素光子计数器的光学串话效应提高光子探测效率

通过分析多像素光子计数器(MPPC)的工作原理和其光学串话(OC)效应的特点,提出在使用MPPC输出雪崩信号的幅度或电荷量作为光子计数的参量时,利用MPPC的OC效应能提高MPPC的光子探测效率的观点,并从理论上分析了OC效应对光子探测效率的影响。理论分析结果显示,在这两种光子计数模式下,利用OC效应能明显提高MPPC的光子探测效率。利用本文模型计算得出当MPPC的雪崩单元数M为1 600个,忽略OC效应时的光子探测效率等于30%,光学串话概率等于50%,以及单脉冲入射光子数均值为10时,包含OC效应影响的等效光子探测效率可提高50%,达45%左右。该结果对MPPC在天体物理、粒子物理、荧光光谱探测等弱光探测场合的应用有一定指导意义。     

A novel nanoscale fin field effect transistor by amended channel: Investigation and fundamental physics

The present paper proposes a new Fin Field Effect Transistor (FinFET) with an amended Channel (AC). The fin region consists of two sections; the lower part which has a rounded shape and the upper part of fin as conventional FinFETs, is cubic. The AC-FinFET devices are proven to have a lower threshold voltage roll-off, reduced DIBL, better subthreshold slope characteristics, and a better gate capacitance in comparison with the C-FinFET. Moreover, the simulation result with three-dimensional and two-carrier device simulator demonstrates an improved output characteristic of the proposed structure due to reduction of self-heating effect. Due to the rounded shape of the lower fin region and decreasing corner effects there, the heat can flow easily, and the device temperature will decrease. Also the gate control over the channel increases due to the narrow upper part of the fin. The paper, thus, attempts to show the advantages of higher performance AC-FinFET device over the conventional one, and its effect on the operation of nanoscale devices.     

Tb doping induced enhancement of anomalous Hall effect in NiFe films

Tbx(Ni0.8Fe0.2)1-x films with x≤0.14 are fabricated and the anomalous Hall effect is studied.The intrinsic anomalous Hall conductivity and the extrinsic one from the impurity and phonon induced scattering both increase with increasing x.The enhancement of the intrinsic anomalous Hall conductivity is ascribed to both the weak spin–orbit coupling enhancement and the Fermi level shift.The enhancement of the extrinsic term comes from the changes of both Fermi level and impurity distribution.In contrast,the in-plane and the out-of-plane uniaxial anisotropies in the Tb Ni Fe films change little with x.The enhancement of the Hall angle by Tb doping is helpful for practical applications of the Hall devices.     

Hot carrier degradation mechanism interpretation by lateral distribution of interface and bulk trap density

We investigated the drain avalanche hot carrier effect (DAHC) of p-type metal-oxide-semiconductor field effect transistor of 0.14 μm channel length (PMOSFET) with SiON gate dielectric. Using three different stress conditions of substrate maximum current, the changes to threshold voltage, maximum transconductance, saturation current and channel leakage current was monitored. Concurrently, the lateral distribution of interface trap density (N_it) and bulk trapped charge density (N_ot) with stress time has been extracted along the 70 nm half channels from gate edge to drain junction, which is the first endeavor in describing charge traps along sub 100 nm short channels. The degradation of the PMOSFET was described by combining electrical property with N_it and N_ot profiles. Hot electron punch through (HEIP) effect was evidenced by negative Not distribution near the drain junction while more severe hot carrier degradation was successfully demonstrated by the empirical power law dependence of the electrical parameters N_it and N_ot. We have studied the evolution of degradation behavior along highly scaled tens of nanometer channel, and N_it and N_ot profile offers systematic study and interpretation of degradation mechanism of hot carrier effect in MOSFET devices.